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Infineon Technologies IRFR1205PBF
- Part No.:
- IRFR1205PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1205PBF.pdf
- Description:
- MOSFET N-CH 55V 44A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,305
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Product details
Overview
IRFR1205PBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 5.5 A, N-channel enhancement-mode MOSFET in DPAK (TO-252) package, optimized for high-efficiency DC-DC conversion and motor control with RDS(on) = 0.27 Ω @ VGS = 10 V and Qg = 12 nC. It serves as a synchronous rectifier or low-side switch in 12 V automotive body electronics.
For engineers reviewing the IRFR1205PBF datasheet, IRFR1205PBF pinout, IRFR1205PBF application, or IRFR1205PBF equivalent, key selection criteria include its 55 V VDSS, 0.27 Ω RDS(on), 12 nC gate charge, DPAK thermal performance, and body diode recovery characteristics for flyback and buck topologies.
Technical Context
This MOSFET employs planar stripe silicon technology with optimized channel density and trench-assisted source contact design to achieve low conduction loss while maintaining robust avalanche capability (EAS = 49 mJ). Its gate threshold voltage (VGS(th)) ranges 2.0–4.0 V, enabling reliable 3.3 V and 5 V logic-level drive compatibility when operated with sufficient VGS margin.
The device features a fast, soft-recovery body diode with trr = 45 ns and Qrr = 28 nC at IF = 5.5 A, supporting high-frequency switching up to 500 kHz in hard-switched converters without significant reverse recovery loss penalty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum drain-source blocking voltage; suitable for 48 V nominal bus systems with 20% transient margin. |
| ID (continuous) | 5.5 A @ TC = 100 °C - Continuous drain current rating under heatsink-cooled conditions; defines thermal design envelope. |
| RDS(on) | 0.27 Ω @ VGS = 10 V - On-resistance directly determines conduction loss in low-side switch applications. |
| Qg | 12 nC - Total gate charge; sets minimum driver strength requirement and influences switching loss at 100–500 kHz. |
| trr | 45 ns - Body diode reverse recovery time; critical for minimizing shoot-through risk and EMI in synchronous rectification. |
| EAS | 49 mJ - Single-pulse avalanche energy rating; enables robustness against inductive switching transients in motor drives. |
Pinout & Package
IRFR1205PBF uses the DPAK (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.3 mm and supports PCB copper area thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connected to power ground in low-side configurations. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <12 nC charge for full enhancement; sensitive to ESD. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on bottom side; electrically and thermally connected to drain; must be soldered to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free (Pb-free) construction | Complies with RoHS Directive 2011/65/EU; no lead in die attach, plating, or mold compound. |
| Fast, soft-recovery body diode | trr = 45 ns, Qrr = 28 nC - Reduces switching loss and EMI in flyback and synchronous buck converters. |
| Low gate charge (Qg) | 12 nC - Enables use with low-power gate drivers (e.g., TC4420, UCC27531) without external buffering. |
| Avalanche-rated (Rg-free) | EAS = 49 mJ - Supports unclamped inductive switching without external snubbers in relay drivers and solenoid controls. |
Applications
| Automotive Door Module | 12 V DC-DC Buck Converter |
|---|---|
Use Scenario: Driving power windows, locks, and mirrors via PWM-controlled H-bridge outputs. IC Role / Device Role / Timing Role: Low-side N-channel switch in half-bridge configuration; handles bidirectional motor current up to 5 A. Use Value: 0.27 Ω RDS(on) minimizes heat generation in confined module enclosures; DPAK footprint allows compact PCB layout. |
Use Scenario: Synchronous rectifier in 12 V input, 3.3 V/5 V output buck converter for infotainment head units. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; operates at 300 kHz with 50% duty cycle. Use Value: Body diode trr = 45 ns prevents cross-conduction during dead-time; improves efficiency by 3–5% vs. diode solution. |
| Industrial PLC Output Stage | LED Driver for Commercial Lighting |
Use Scenario: Solid-state relay replacement for 24 V DC digital output modules driving solenoids and indicators. IC Role / Device Role / Timing Role: Low-side switch controlling load current; subjected to inductive turn-off transients. Use Value: 49 mJ EAS rating eliminates need for external clamping diodes; simplifies BOM and board space. |
Use Scenario: Constant-current dimming switch in 24 V constant-voltage LED driver with PWM dimming interface. IC Role / Device Role / Timing Role: High-speed PWM switch modulating LED string current at 1–5 kHz. Use Value: 12 nC Qg ensures clean 5 kHz edge transitions with minimal driver power; reduces audible noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | VDSS = 60 V, RDS(on) = 0.022 Ω @ 10 V, Qg = 65 nC, TO-220 package | Higher current (55 A), larger package - requires heatsink; unsuitable for space-constrained DPAK layouts. | Select when higher continuous current and thermal mass are needed; avoid if board space or gate drive capability is limited. |
| DMN601DWK-7 | VDSS = 60 V, RDS(on) = 0.22 Ω @ 4.5 V, Qg = 7.5 nC, SOT-26 package | Logic-level compatible, smaller SOT-26 - rated only for 2.8 A continuous; lower thermal mass limits power handling. | Choose for 3.3 V MCU-driven low-power loads where gate drive strength is constrained; not for >3 A sustained operation. |
Compared with STP55NF06L and DMN601DWK-7, IRFR1205PBF delivers optimal balance of 5.5 A current capability, DPAK thermal interface, and 12 nC gate charge-making it uniquely suited for mid-power automotive and industrial switching where board area, driver strength, and thermal management are jointly constrained.
Availability
IRFR1205PBF is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and industrial PLC output stages requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR1205PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and maintains its power MOSFET product lines with full technical documentation and qualification compliance.
IRFR1205PBF belongs to the HEXFET® Power MOSFET family, engineered specifically for high-efficiency, medium-current switching in automotive and industrial power conversion systems.
FAQ
Is IRFR1205PBF suitable for 3.3 V microcontroller gate drive?
No-its gate threshold voltage range is 2.0–4.0 V, and full enhancement requires ≥10 V VGS for specified RDS(on). At 3.3 V, RDS(on) exceeds 1.2 Ω, causing excessive conduction loss. A gate driver (e.g., TC4427) or level shifter is required for logic-level MCU interfaces.
What is the maximum PCB copper area recommended for the DPAK drain pad?
Infineon recommends ≥100 mm² of 2 oz copper connected to the exposed drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated) to an internal ground plane. This achieves ~45 °C/W junction-to-ambient in still air, enabling 5.5 A continuous operation at TA = 50 °C.
Does IRFR1205PBF have integrated ESD protection?
No-IRFR1205PBF has no on-die ESD protection circuitry. Gate oxide is rated for ±20 V HBM per JEDEC JESD22-A114. Handling requires strict ESD controls: grounded wrist strap, dissipative mats, and ionized airflow; gate should never be left floating during assembly.
Can IRFR1205PBF replace IRFR120 in existing designs?
Yes-IRFR1205PBF is a direct drop-in replacement for IRFR120 (same DPAK package, pinout, and electrical specs), with identical VDSS, RDS(on), and Qg. The "PBF" suffix confirms lead-free compliance; no layout or thermal redesign is needed for migration.
IRFR1205PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR1205PBF FAQ
1.How can I place an order for IRFR1205PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1205PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1205PBF reliable?
The price and inventory of IRFR1205PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1205PBF is usually 5 days.
3.What payment methods are accepted for IRFR1205PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1205PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1205PBF?
IRFR1205PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1205PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1205PBF?
For technical support, including IRFR1205PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1205PBF requirements.
6.How does Aetrix verify that IRFR1205PBF is sourced from the original manufacturer or authorized distributors?
All IRFR1205PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1205PBF meets industry standards.
7.What is the process for return or replacement of IRFR1205PBF?
All IRFR1205PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1205PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1205PBF part is unused and in its original packaging.
Return procedure for IRFR1205PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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