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Infineon Technologies IRFR1205TRL
- Part No.:
- IRFR1205TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1205TRL.pdf
- Description:
- MOSFET N-CH 55V 44A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,210
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Product details
Overview
IRFR1205TRL from Infineon Technologies (formerly International Rectifier) is a 55V, 44A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) surface-mount package, featuring 27 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFR1205TRL datasheet, IRFR1205TRL pinout, IRFR1205TRL application, or IRFR1205TRL equivalent, key selection criteria include its 160 A pulsed drain current capability, 210 mJ single-pulse avalanche energy rating, 65 nC total gate charge, and thermal resistance of 1.4 °C/W junction-to-case - critical for thermally constrained PCB-mounted switching designs.
Technical Context
This HEXFET® device employs fifth-generation silicon processing to minimize conduction loss while maintaining fast switching (tr = 69 ns, tf = 60 ns) and robust unclamped inductive switching performance. Its body diode exhibits 1.3 V forward voltage at 22 A and 65–98 ns reverse recovery time.
The MOSFET operates across –55°C to +175°C junction temperature range with ±20 V gate-source voltage rating and 0.055 V/°C breakdown voltage temperature coefficient. It supports linear-mode operation within SOA limits up to 10 µs pulses at 25°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; defines upper rail limit in 48V systems. |
| RDS(on) | 0.027 Ω @ VGS = 10 V - Enables <1.2 W conduction loss at 20 A DC, critical for thermal management in compact layouts. |
| ID (25°C) | 44 A - Continuous drain current rating at TC = 25°C; derates to 31 A at 100°C case temperature. |
| EAS | 210 mJ - Single-pulse avalanche energy; allows reliable operation under inductive turn-off stress without external snubbers. |
| Qg | 65 nC - Total gate charge; determines driver strength requirement (e.g., ≥2 A peak for 100 ns switching). |
| RθJC | 1.4 °C/W - Junction-to-case thermal resistance; enables direct heatsinking via PCB copper pour or clip attach. |
| Ciss | 1300 pF - Input capacitance at VDS = 0 V; impacts gate drive loop stability and Miller effect during high-dv/dt transitions. |
Pinout & Package
Package: TO-252AA (D-Pak), surface-mount, 3-lead configuration with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller outputs. |
| 2 (Drain) | High-side power switch node | Connected to exposed metal tab; must be routed to high-current path and thermal plane for heat dissipation. |
| 3 (Source) | Reference node / return path | Serves as local ground reference for gate drive; low-inductance layout essential to suppress ringing. |
| 4 (Drain) | Secondary drain connection | Electrically tied to Pin 2; provides redundant current path and enhanced thermal conduction to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 27 mΩ at 10 V gate drive reduces I²R losses by >30% vs. prior-gen 55V MOSFETs in 12–48V buck stages. |
| Fully avalanche-rated | 210 mJ EAS and 25 A IAR enable robustness in unclamped inductive switching without external protection. |
| Fast switching | 7.3 ns turn-on delay + 69 ns rise time supports >500 kHz PWM operation with minimal switching loss trade-off. |
| Surface-mount D-Pak | TO-252AA footprint allows automated assembly and 1.5 W power dissipation on standard FR-4 PCBs without heatsinks. |
Applications
| DC-DC Buck Converter | Brushless DC Motor Driver |
|---|---|
Use Scenario: High-current 12V-to-5V step-down converter in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300 kHz with 20 A average output current. Use Value: 27 mΩ RDS(on) limits conduction loss to 1.08 W at full load, enabling natural convection cooling on 2-layer PCB. | Use Scenario: Half-bridge leg in 24V BLDC fan controller for HVAC systems. IC Role / Device Role / Timing Role: Low-side switching element with 100% duty cycle capability during PWM dead-time control. Use Value: 160 A pulsed drain rating accommodates motor startup surge currents exceeding 100 A for short durations. |
| LED Constant-Current Driver | Hot-Swap Controller |
Use Scenario: Dimmable 48V LED string driver with analog current regulation. IC Role / Device Role / Timing Role: Linear-mode pass transistor regulating current through 10-series white LEDs. Use Value: SOA compliance up to 100 µs pulses at 175°C junction temperature enables safe transient overloads during dimming transitions. | Use Scenario: Inrush current limiter in 48V telecom power distribution board. IC Role / Device Role / Timing Role: Hot-swap FET controlling power ramp-up to downstream 12V/5V rails. Use Value: 25 A avalanche current rating protects against bus transients during live insertion, eliminating need for external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N55F6 | 55 V VDSS, 110 A ID, 11 mΩ RDS(on), TO-220 package | Higher current rating but through-hole only; lacks surface-mount thermal interface of D-Pak | Select when higher continuous current and heatsink mounting are required; avoid for space-constrained SMT designs. |
| IXTP110N055T | 55 V VDSS, 110 A ID, 5.5 mΩ RDS(on), TO-220 package, 175°C TJ max | Lower RDS(on) and extended temperature rating, but larger footprint and no integrated drain pad | Prefer for ultra-low-loss 48V systems where board area and thermal mass allow TO-220 mounting. |
Compared with STP110N55F6 and IXTP110N055T, IRFR1205TRL offers optimal balance of SMT manufacturability, thermal performance via D-Pak drain pad, and proven avalanche ruggedness - making it preferred for high-reliability, medium-power embedded switching where board space and assembly automation are constraints.
Availability
IRFR1205TRL is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFR1205TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.
This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency switching in medium-voltage power conversion and motor control applications where ruggedness, low RDS(on), and surface-mount reliability are essential.
FAQ
Is IRFR1205TRL suitable for logic-level gate drive?
No - IRFR1205TRL is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires 10 V gate drive to achieve rated 27 mΩ RDS(on). Driving it with 3.3 V or 5 V will result in significantly higher on-resistance and thermal stress. Use dedicated gate drivers or level-shifted 10 V supplies.
What is the maximum PCB copper area needed for thermal performance?
Per IR application note AN-994, a minimum 1" × 1" (25.4 mm × 25.4 mm) FR-4 copper pour with 2 oz. thickness and thermal vias to inner layers achieves the specified 50 °C/W RθJA. For 107 W power dissipation, this layout supports ~25°C temperature rise above ambient - sufficient for most non-enclosed industrial environments.
Does IRFR1205TRL have integrated ESD protection?
No - IRFR1205TRL does not include on-chip ESD protection diodes. Gate oxide is rated for ±20 V absolute maximum, but real-world handling requires external 10 kΩ series gate resistor and optional 12 V Zener clamp to prevent damage from static discharge or gate ringing during layout or test.
Can IRFR1205TRL replace IRFZ44N in existing designs?
Yes - IRFR1205TRL is a direct surface-mount replacement for through-hole IRFZ44N in many cases: same VDSS (55 V), lower RDS(on) (27 mΩ vs. 28 mΩ), and improved avalanche rating (210 mJ vs. 60 mJ). However, verify PCB footprint compatibility (TO-252AA vs. TO-220) and gate drive timing due to higher Qg (65 nC vs. 35 nC).
IRFR1205TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR1205TRL FAQ
1.How can I place an order for IRFR1205TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1205TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1205TRL reliable?
The price and inventory of IRFR1205TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1205TRL is usually 5 days.
3.What payment methods are accepted for IRFR1205TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1205TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1205TRL?
IRFR1205TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1205TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1205TRL?
For technical support, including IRFR1205TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1205TRL requirements.
6.How does Aetrix verify that IRFR1205TRL is sourced from the original manufacturer or authorized distributors?
All IRFR1205TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1205TRL meets industry standards.
7.What is the process for return or replacement of IRFR1205TRL?
All IRFR1205TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1205TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1205TRL part is unused and in its original packaging.
Return procedure for IRFR1205TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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