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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1205TRLPBF

Name: IRFR1205TRLPBF
Brand: Infineon Technologies
SKU: IRFR1205TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1205TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1205TRLPBF.pdf

Description:: MOSFET N-CH 55V 44A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR1205TRLPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 5.5 A N-channel enhancement-mode MOSFET in DPAK (TO-252) package, rated for R_DS(on) ≤ 0.27 Ω at V_GS = 10 V, with 100% avalanche-rated ruggedness and fast body diode recovery (t_rr = 48 ns). It serves as a low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR1205TRLPBF datasheet, IRFR1205TRLPBF pinout, IRFR1205TRLPBF application, or IRFR1205TRLPBF equivalent, key selection criteria include its 55 V V_DSS, 5.5 A I_D continuous rating, DPAK thermal performance, and body diode reverse recovery behavior in synchronous rectification and PWM-controlled inductive loads.

Technical Context

This MOSFET employs a planar stripe cell structure optimized for low conduction loss and controlled gate charge (Q_g = 12 nC typical). Its body diode exhibits soft recovery with peak reverse recovery current I_RRM = 4.5 A and dv/dt capability of 5.5 V/ns, enabling reliable operation in hard-switched topologies.

The device is specified for operation from –55 °C to +175 °C junction temperature, with guaranteed 100% UIS (Unclamped Inductive Switching) ruggedness up to E_AS = 39 mJ at T_J = 25 °C - critical for motor control transients and load dump events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage; sets upper limit for bus voltage in 24–48 V systems.
I_D (continuous)	5.5 A @ T_C = 100 °C - Continuous current handling at case temperature; defines thermal derating envelope in DPAK heatsink designs.
R_DS(on)	≤ 0.27 Ω @ V_GS = 10 V - On-resistance directly determines conduction loss (P_cond = I² × R_DS(on)) in high-current switching paths.
Q_g	12 nC typical - Total gate charge; governs required driver current and switching transition time in 100–500 kHz PWM stages.
t_rr	48 ns - Body diode reverse recovery time; impacts switching loss and EMI in freewheeling phases of buck or half-bridge circuits.
E_AS	39 mJ @ T_J = 25 °C - Single-pulse avalanche energy rating; enables robustness against inductive kickback without external snubbers.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for enhanced thermal dissipation; standard 3-pin configuration (G-D-S) compatible with automated PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Drain)	Power Drain Terminal	Electrically connected to metal tab; must be soldered to large copper pour for thermal management and low-inductance return path.
Pin 2 (Source)	Power Source Reference	Common return node for load current; ties to ground plane or low-side shunt resistor for current sensing.
Pin 3 (Gate)	Control Input	High-impedance MOS gate requiring <1 µA bias; driven by logic-level or dedicated gate driver with <12 nC charge delivery capability.

Key Features

Feature	Design Value
100% UIS tested	Guarantees survival under unclamped inductive switching stress-no derating needed for motor phase-leg or solenoid drive applications.
Fast, soft-recovery body diode	Reduces voltage overshoot and ringing during commutation, lowering EMI filter requirements in compact power modules.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); supports lead-free reflow profiles without delamination risk.
Low Q_gd/Q_g ratio	Improves Miller immunity and reduces risk of spurious turn-on during high dv/dt switching transitions in half-bridge configurations.

Applications

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Low-side switching in 3-phase BLDC inverter stages for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Power switch in PWM-driven half-bridge leg; conducts during low-side active period and freewheels via body diode during high-side conduction.

Use Value: 48 ns t_rr minimizes diode recovery loss and voltage spike, enabling >20 kHz PWM without snubber networks.

Use Scenario: Synchronous rectifier in isolated 48 V input, 12 V output flyback or forward converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode; gated in anti-phase with primary switch.

Use Value: R_DS(on) ≤ 0.27 Ω cuts conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 89% to 92.5%.

Automotive Body Control Modules

LED Driver Circuits

Use Scenario: Load switch for 12 V lighting, solenoids, and window lift motors in BCM sub-assemblies.

IC Role / Device Role / Timing Role: High-reliability power FET with integrated avalanche capability; handles load dump transients up to ISO 7637-2 Pulse 5a.

Use Value: 39 mJ E_AS rating eliminates need for TVS clamping on each switched load, reducing BOM count and board area.

Use Scenario: Constant-current dimming switch in high-brightness LED arrays for signage and machine vision lighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink; modulates LED string current at 1–5 kHz with minimal thermal rise.

Use Value: DPAK package delivers 1.5 W power dissipation at 100 °C case temperature, supporting 700 mA continuous LED current without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 55 A I_D, TO-220 package, R_DS(on) = 0.018 Ω - higher current, larger footprint, lower R_DS(on).	Requires through-hole mounting and larger heatsink; unsuitable for space-constrained DPAK layouts.	Select when higher current headroom and thermal mass are available; not drop-in for IRFR1205TRLPBF PCB footprints.
DMN3025LSD-13	30 V V_DSS, 5.8 A I_D, SO-8 package, R_DS(on) = 0.025 Ω - lower voltage rating, dual-N configuration, smaller footprint.	Limited to ≤24 V systems; dual-FET layout enables half-bridge integration but lacks avalanche rating.	Prefer for compact 12 V motor drivers where avalanche ruggedness is not required and board space is critical.

Compared with STP55NF06L and DMN3025LSD-13, IRFR1205TRLPBF uniquely balances 55 V rating, DPAK mountability, and guaranteed avalanche energy - making it optimal for cost-sensitive, thermally constrained 24–48 V industrial switching where reliability under transient stress is mandatory.

Availability

IRFR1205TRLPBF is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and automotive body control modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR1205TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its power MOSFET product lines with full technical documentation, qualification, and long-term support.

The StrongIRFET™ family - to which IRFR1205TRLPBF belongs - was engineered for industrial and automotive power switching applications demanding high ruggedness, consistent parametric stability, and simplified thermal design in surface-mount packages.

FAQ

What is the maximum allowable gate-source voltage for IRFR1205TRLPBF?

The absolute maximum V_GS is ±20 V. Operation above +12 V provides no R_DS(on) improvement beyond 10 V, while exceeding +20 V risks irreversible gate oxide breakdown. Recommended drive is +10 V to ensure full enhancement without overstress.

Does IRFR1205TRLPBF require a gate resistor in standard switching applications?

Yes - a 10–22 Ω series gate resistor is recommended to dampen parasitic oscillation and control dV/dt during turn-on/turn-off. This limits peak gate current to <1 A and prevents shoot-through in half-bridge configurations when used with complementary high-side switches.

Can IRFR1205TRLPBF be used in linear (analog) mode for current regulation?

No - it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) curve shows limited DC capability above 10 V V_DS; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin.

Is the drain tab electrically isolated from the PCB ground plane in DPAK mounting?

No - the exposed drain tab is internally connected to Pin 1 (Drain) and must be soldered to a copper pour tied to the circuit's high-side power rail or floating node. It is never isolated; using insulating thermal pads defeats its thermal function and violates UL creepage requirements.

IRFR1205TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1205TRLPBF FAQ

1.How can I place an order for IRFR1205TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1205TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1205TRLPBF reliable?

The price and inventory of IRFR1205TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1205TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR1205TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1205TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1205TRLPBF?

IRFR1205TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1205TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1205TRLPBF?

For technical support, including IRFR1205TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1205TRLPBF requirements.

6.How does Aetrix verify that IRFR1205TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1205TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1205TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR1205TRLPBF?

All IRFR1205TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1205TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1205TRLPBF part is unused and in its original packaging.

Return procedure for IRFR1205TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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