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Infineon Technologies IRFR1205TRR
- Part No.:
- IRFR1205TRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1205TRR.pdf
- Description:
- MOSFET N-CH 55V 44A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,254
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Product details
Overview
IRFR1205TRR from Infineon Technologies (formerly International Rectifier) is a 55V, 44A N-channel surface-mount power MOSFET in D-Pak (TO-252AA) package, featuring 27 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFR1205TRR datasheet, IRFR1205TRR pinout, IRFR1205TRR application, or IRFR1205TRR equivalent, key selection criteria include pulsed drain current capability (160 A), single-pulse avalanche energy (210 mJ), gate charge profile (65 nC total), and thermal resistance (1.4 °C/W junction-to-case).
Technical Context
This HEXFET® device uses fifth-generation silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its body diode exhibits 1.3 V forward voltage at 22 A and 65–98 ns reverse recovery time under standardized test conditions (TJ = 25°C, IF = 25 A, di/dt = 100 A/µs).
The MOSFET operates across –55°C to +175°C junction temperature range with ±20 V gate-source voltage rating and 0.055 V/°C breakdown voltage temperature coefficient. It supports fast switching with 7.3 ns turn-on delay, 69 ns rise time, and 60 ns fall time into 1.1 Ω load with 12 Ω gate resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche conduction; sets upper limit for bus voltage in buck converters and H-bridge arms. |
| RDS(on) | 0.027 Ω @ VGS = 10 V - Determines conduction loss at 26 A; yields ~18.6 W I²R loss at full continuous current (44 A) if sustained. |
| ID (TC = 25°C) | 44 A - Continuous drain current rating under ideal heatsinking; limited by package thermal resistance (1.4 °C/W) and max TJ = 175°C. |
| EAS | 210 mJ - Single-pulse avalanche energy handling capacity; enables robust operation during inductive turn-off transients without external snubbers. |
| Qg | 65 nC - Total gate charge required for full enhancement; directly impacts gate driver power and switching speed in high-frequency SMPS designs. |
| Ciss | 1300 pF - Input capacitance at VDS = 0 V; influences gate drive loop stability and Miller effect during high dv/dt transitions. |
| trr / Qrr | 65–98 ns / 160–240 nC - Body diode reverse recovery characteristics; critical for synchronous rectification and shoot-through immunity in bridge topologies. |
Pinout & Package
IRFR1205TRR is housed in a surface-mount TO-252AA (D-Pak) package with exposed drain pad for thermal conduction. The package measures 6.7 × 6.35 mm (L × W), features gull-wing leads, and is rated for 300°C soldering (10 s, 1.6 mm from case).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires <20 V absolute rating and low-impedance drive due to 65 nC Qg. |
| 2 - Drain | High-side current path | Internally connected to exposed copper pad; serves as primary heat sink interface and high-current output node in low-side switch configurations. |
| 3 - Source | Reference node & return path | Provides common reference for gate drive and current sensing; internal source inductance (7.5 nH) affects high-speed switching behavior. |
| 4 - Drain (tie-bar) | Secondary drain connection | Electrically redundant with Pin 2; enhances current sharing and thermal spreading across PCB copper pour under high-current operation. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 27 mΩ enables <1 W conduction loss at 6 A, reducing thermal load in compact 12 V automotive and industrial power supplies. |
| Full avalanche rating | 210 mJ single-pulse energy tolerance allows reliable operation in unclamped inductive loads (e.g., solenoid drivers) without external protection. |
| Fast switching performance | Sub-100 ns rise/fall times support >500 kHz PWM frequencies in LLC resonant converters and Class-D audio amplifiers. |
| Surface-mount D-Pak | TO-252AA footprint enables automated assembly and efficient PCB thermal management via exposed drain pad and large copper areas. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial control modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in fixed-frequency 250 kHz buck stage. Use Value: 27 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 40 mΩ devices, improving efficiency from 92% to 94.1% at 15 A load. |
Use Scenario: Half-bridge H-bridge controlling 24 V, 15 A brushed motors in warehouse automation carts. IC Role / Device Role / Timing Role: High-current, low-side switch with integrated body diode freewheeling path. Use Value: 210 mJ avalanche rating eliminates need for external flyback diodes during rapid direction reversal and braking events. |
| LED Constant-Current Driver | Power Factor Correction (PFC) Boost Switch |
|
Use Scenario: Dimmable 40 W LED streetlight driver with analog/PWM dimming interface. IC Role / Device Role / Timing Role: Primary switching element in constant-current boost topology operating at 100 kHz. Use Value: 65 nC Qg enables clean gate drive with low-power 1 A peak driver IC, minimizing gate loss in thermally constrained outdoor enclosures. |
Use Scenario: Active PFC stage in 300 W AC-DC front-end for telecom rectifiers. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter. Use Value: 1300 pF Ciss and 150 pF Crss support stable zero-voltage switching (ZVS) transition when paired with appropriate resonant inductor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK55ZFP | 550 V VDSS, 10 A ID, 0.55 Ω RDS(on), TO-220FP package | Higher voltage rating but lower current and higher on-resistance; unsuitable for 44 A continuous use | Select only when 550 V blocking is mandatory and thermal budget permits higher conduction loss. |
| IXTP120N055T | 55 V VDSS, 120 A ID, 5.5 mΩ RDS(on), TO-220 package | Lower RDS(on) and higher current, but through-hole mounting and larger footprint | Prefer for high-current, low-loss designs where board space and automated assembly are not constraints. |
Compared with STP10NK55ZFP and IXTP120N055T, IRFR1205TRR uniquely balances surface-mount compatibility, 44 A current capability, and 27 mΩ on-resistance in a thermally efficient D-Pak - making it optimal for space-constrained, medium-power industrial SMPS where reflow assembly and thermal management are co-optimized.
Availability
IRFR1205TRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and PFC stages requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for IRFR1205TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor systems, and automotive microcontrollers, with core expertise in high-efficiency power conversion and ruggedized discrete devices.
IRFR1205TRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial power supplies, motor controls, and renewable energy inverters where thermal robustness and avalanche tolerance are critical.
FAQ
What is the maximum allowable gate-source voltage for IRFR1205TRR?
The absolute maximum VGS rating is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤15 V during transient events and maintained at 10 V for full RDS(on) specification compliance. Gate driver circuits must include Zener or TVS protection referenced to source.
Can IRFR1205TRR be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.055 V/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.
Does IRFR1205TRR require a gate resistor, and what value is recommended?
A gate resistor is mandatory to dampen ringing and control dV/dt. For 25 A switching at 250 kHz with 12 V drive, a 12 Ω resistor achieves measured 7.3 ns td(on) and 60 ns tf. Lower values increase EMI risk; higher values slow switching and raise dynamic losses. Use non-inductive SMD resistors placed adjacent to the gate pin.
Is the body diode suitable for synchronous rectification in a buck converter?
The body diode has 1.3 V forward drop at 22 A and 65–98 ns reverse recovery time, making it usable for low-frequency (<100 kHz) or low-duty-cycle synchronous rectification. However, its Qrr (160–240 nC) and trr introduce significant switching loss above 200 kHz - dedicated Schottky or GaN FETs are preferred for high-frequency synchronous designs.
IRFR1205TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR1205TRR FAQ
1.How can I place an order for IRFR1205TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1205TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1205TRR reliable?
The price and inventory of IRFR1205TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1205TRR is usually 5 days.
3.What payment methods are accepted for IRFR1205TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1205TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1205TRR?
IRFR1205TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1205TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1205TRR?
For technical support, including IRFR1205TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1205TRR requirements.
6.How does Aetrix verify that IRFR1205TRR is sourced from the original manufacturer or authorized distributors?
All IRFR1205TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1205TRR meets industry standards.
7.What is the process for return or replacement of IRFR1205TRR?
All IRFR1205TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1205TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1205TRR part is unused and in its original packaging.
Return procedure for IRFR1205TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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