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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1205TRRPBF

Name: IRFR1205TRRPBF
Brand: Infineon Technologies
SKU: IRFR1205TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1205TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1205TRRPBF.pdf

Description:: MOSFET N-CH 55V 44A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR1205TRRPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 54 A, N-channel enhancement-mode MOSFET in DPAK package with 18 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IRFR1205TRRPBF datasheet, IRFR1205TRRPBF pinout, IRFR1205TRRPBF application, or IRFR1205TRRPBF equivalent, key selection criteria include its low gate charge (Q_g = 27 nC), fast switching speed (t_rise = 15 ns), body diode reverse recovery time (t_rr = 55 ns), and lead-free RoHS-compliant construction.

Technical Context

This MOSFET employs a trench-gate process to achieve low on-resistance and high current density. Its optimized gate oxide thickness and cell pitch support stable operation under repetitive avalanche conditions up to E_AS = 190 mJ at T_J = 25 °C.

The device features a fast, soft-recovery body diode with controlled reverse recovery charge (Q_rr = 45 nC) and low peak reverse recovery current (I_RRM = 42 A), reducing EMI and voltage overshoot in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage for 24 V and 48 V bus applications
R_DS(on) @ V_GS = 10 V	18 mΩ - Enables <1.5 W conduction loss at 54 A continuous drain current
I_D (continuous)	54 A - Rated for TO-252/DPAK footprint with PCB copper area ≥ 1 in²
Q_g	27 nC - Supports efficient 500 kHz PWM drive with standard gate drivers
t_rr	55 ns - Limits voltage spikes during synchronous rectification in buck converters
E_AS	190 mJ - Withstands single-pulse inductive load switching without failure

Pinout & Package

IRFR1205TRRPBF uses the surface-mount DPAK (TO-252AA) package with exposed drain pad for thermal performance. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is rated for 1.5 W dissipation at T_C = 25 °C with 1 in² 2-oz copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and gate reference	Connected to PCB ground plane; serves as common reference for gate drive and current sensing
Pin 2 (Gate)	Control terminal for channel conduction	Requires 10 V drive for full enhancement; threshold voltage V_GS(th) = 2.0–4.0 V
Pin 3 (Drain)	High-side power input node	Exposed metal pad - must be soldered to large copper pour for thermal management

Key Features

Feature	Design Value
Low Q_g/R_DS(on) ratio	1.5 nC/mΩ - Reduces total gate drive energy and switching losses simultaneously
Fast, soft-recovery body diode	t_rr = 55 ns, Q_rr = 45 nC - Minimizes shoot-through risk and snubber losses in half-bridge sync rectifiers
100% avalanche rated	E_AS = 190 mJ - Eliminates need for external clamping in inductive switching circuits
Lead-free and RoHS compliant	Meets JEDEC J-STD-020 reflow profile - compatible with standard Pb-free SMT assembly

Applications

DC-DC Buck Converter

Brushless DC Motor Driver

Use Scenario: 48 V input to 12 V/30 A output in telecom power shelf.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz PWM frequency.

Use Value: 18 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 30 mΩ MOSFETs, improving efficiency from 92.1% to 93.4%.

Use Scenario: 3-phase inverter stage for 750 W e-bike controller.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation with 20 kHz PWM modulation.

Use Value: 55 ns t_rr prevents cross-conduction during dead-time transitions, eliminating 12 V overshoot spikes observed with legacy 120 ns diodes.

Industrial LED Driver

UPS Inverter Stage

Use Scenario: Constant-current dimmable driver for 400 W high-bay luminaires.

IC Role / Device Role / Timing Role: Primary switch in flyback topology regulating 350 mA output at 36 V.

Use Value: 27 nC Q_g enables clean turn-on with TC4427 driver, reducing gate drive power dissipation by 40% versus 45 nC alternatives.

Use Scenario: H-bridge output stage in 1 kVA line-interactive UPS.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 15 A RMS output current at 50 Hz fundamental with 5 kHz carrier.

Use Value: 190 mJ E_AS rating ensures reliable operation during battery-to-inverter transition surges without external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V, but Q_g = 55 nC - higher switching loss	Better conduction loss at low frequency; unsuitable above 200 kHz	Prefer for 50/60 Hz AC switching where gate drive loss is negligible
IXTP50N055T	R_DS(on) = 5.5 mΩ @ 10 V, but TO-220 package - no surface-mount compatibility	Lower conduction loss, but requires through-hole layout and heatsink mounting	Select only when board space allows discrete heatsinking and manual assembly is acceptable

Compared with STP55NF06L and IXTP50N055T, IRFR1205TRRPBF delivers optimal balance of low R_DS(on), moderate Q_g, and DPAK manufacturability-making it preferred for automated SMT production of mid-frequency, medium-power SMPS and motor drives.

Availability

IRFR1205TRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor controllers, industrial LED drivers, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRFR1205TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous AEC-Q101 and industrial qualification standards.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR1205TRRPBF has a maximum rated junction temperature of 175 °C. Derating begins at T_J > 125 °C per the Safe Operating Area (SOA) curve, and thermal design must ensure steady-state T_J remains ≤150 °C under worst-case ambient and power dissipation conditions.

Is this MOSFET suitable for linear mode (saturation region) operation?

No-IRFR1205TRRPBF is not characterized or guaranteed for linear mode use. Its SOA limits restrict safe operation to pulse widths ≤10 ms at V_DS > 30 V, and sustained operation in the saturation region risks thermal runaway due to positive temperature coefficient of R_DS(on).

Does the body diode support synchronous rectification without external Schottky assist?

Yes-the body diode's 55 ns t_rr and 45 nC Q_rr allow reliable synchronous rectification in buck converters up to 300 kHz without external Schottky diodes, provided gate timing accounts for diode conduction delay and dead-time is ≥80 ns.

What is the gate threshold voltage range and how does it affect drive circuit design?

V_GS(th) is specified from 2.0 V to 4.0 V at I_D = 250 µA. To ensure full enhancement and minimize R_DS(on) variation, gate drive must deliver ≥10 V with ≤1 Ω source impedance; logic-level 5 V drivers are insufficient for rated current performance.

IRFR1205TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1205TRRPBF FAQ

1.How can I place an order for IRFR1205TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1205TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1205TRRPBF reliable?

The price and inventory of IRFR1205TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1205TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR1205TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1205TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1205TRRPBF?

IRFR1205TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1205TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1205TRRPBF?

For technical support, including IRFR1205TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1205TRRPBF requirements.

6.How does Aetrix verify that IRFR1205TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1205TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1205TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR1205TRRPBF?

All IRFR1205TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1205TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1205TRRPBF part is unused and in its original packaging.

Return procedure for IRFR1205TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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