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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR120NPBF

Name: IRFR120NPBF
Brand: Infineon Technologies
SKU: IRFR120NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR120NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120NPBF.pdf

Description:: MOSFET N-CH 100V 9.4A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR120NPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 7.5 A N-channel enhancement-mode MOSFET in TO-252AA (DPAK) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V and 25 °C, 45 nC total gate charge, and 100% avalanche-rated operation. It serves as a high-efficiency power switch in DC-DC converters for telecom power supplies.

For engineers reviewing the IRFR120NPBF datasheet, IRFR120NPBF pinout, IRFR120NPBF application, or IRFR120NPBF equivalent, key selection criteria include R_DS(on), Q_g, SOA limits, thermal resistance (R_θJA = 60 °C/W), and lead-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs planar V-groove technology with optimized channel geometry to achieve low conduction loss and fast switching transition. Its rated 100 V V_DSS supports 48 V input bus systems, while the 7.5 A I_D continuous rating enables use in 30–50 W synchronous buck stages.

The device integrates a built-in body diode with 45 ns reverse recovery time (t_rr) and 100% UIS-tested ruggedness, allowing reliable operation under inductive load switching and hard commutation conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V nominal input systems with 2× safety margin against transients
R_DS(on) @ V_GS = 10 V	0.27 Ω - enables ≤2.0 W conduction loss at 7.5 A continuous drain current
Q_g	45 nC - determines gate drive power requirement and switching speed in PWM controllers
t_rr	45 ns - minimizes body diode conduction loss during dead-time in synchronous rectification
R_θJA	60 °C/W - defines maximum power dissipation (≈2.0 W) on standard 1-in² 2-oz copper PCB
UIS Rating	100% tested - guarantees single-pulse avalanche energy handling up to 125 mJ without failure

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, single-die, thermally enhanced plastic package with exposed drain pad for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to power ground plane in buck converter low-side layout
Pin 2 (Gate)	Control electrode	Receives PWM signal from driver IC; requires ≥10 V for full enhancement and minimal R_DS(on)
Pin 3 (Drain)	Power output terminal	Connected to input voltage rail; exposed pad is electrically tied to drain for thermal and electrical performance

Key Features

Feature	Design Value
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; no Pb in die attach, plating, or mold compound
100% UIS tested	Guarantees avalanche robustness across full temperature range without derating
Low Q_g/R_DS(on) ratio	167 nC/Ω - improves trade-off between switching loss and conduction loss in 200–500 kHz designs
Fast body diode t_rr	45 ns - reduces reverse recovery charge (Q_rr = 35 nC) and associated EMI in synchronous topologies

Applications

Telecom DC-DC Converters

Industrial Motor Drives

Use Scenario: 48 V input, 5–12 V output synchronous buck converter in base station power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300 kHz PWM frequency.

Use Value: 0.27 Ω R_DS(on) reduces conduction loss by 35% versus legacy 0.42 Ω alternatives at 6 A load.

Use Scenario: Half-bridge inverter stage driving 24 V brushed DC motors in PLC-controlled actuators.

IC Role / Device Role / Timing Role: High-speed switching element with fast turn-on/off for precise torque control.

Use Value: 45 ns t_rr prevents shoot-through during complementary switching and eliminates need for external freewheeling diodes.

LED Driver Power Stages

Automotive Body Control Modules

Use Scenario: Constant-current buck LED driver powering 10–20 W automotive headlamp arrays.

IC Role / Device Role / Timing Role: Primary power switch modulating LED string current via PWM dimming.

Use Value: 100% UIS rating ensures survival during LED open-circuit fault events with inductive energy dump.

Use Scenario: Load switch controlling 12 V solenoid valves and relays in BCM power distribution units.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch with integrated avalanche capability.

Use Value: R_θJA = 60 °C/W allows direct mounting on FR4 without heatsink for ≤3 A resistive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NF10	R_DS(on) = 0.22 Ω (lower), Q_g = 52 nC (higher), TO-220 package	Requires through-hole assembly and larger heatsink; unsuitable for space-constrained DPAK layouts	Select when lower R_DS(on) outweighs board area and thermal interface constraints
DMN10H120SFD-13	R_DS(on) = 0.29 Ω (slightly higher), Q_g = 38 nC (lower), same TO-252AA package	Better switching efficiency at >400 kHz but higher conduction loss at <200 kHz	Select for high-frequency SMPS where gate drive loss dominates total loss budget

Compared with STP12NF10 and DMN10H120SFD-13, IRFR120NPBF offers optimal balance of R_DS(on), Q_g, and package size for mid-frequency (200–400 kHz), medium-power (20–50 W) surface-mount applications requiring proven avalanche reliability.

Availability

IRFR120NPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, LED driver power stages, and automotive body control modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR120NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical integration from silicon wafer to system-level solutions.

The IRFR120NPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-reliability, medium-voltage switching in industrial and telecom infrastructure where ruggedness and thermal stability are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR120NPBF has a rated T_J(max) of 175 °C. Continuous operation at this limit requires thermal design ensuring case temperature remains ≤110 °C under worst-case ambient and power dissipation, verified via IR thermography or thermal simulation using R_θJC = 3.5 °C/W and R_θJA = 60 °C/W values.

Does IRFR120NPBF require a gate resistor for safe switching?

Yes - a 10–22 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during 10 V drive transitions. This value balances switching speed (t_rise/t_fall ≈ 25 ns) against EMI and driver stress, especially when driving from UC384x or similar PWM ICs.

Can IRFR120NPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors to prevent oscillation; derate total current by 15% versus sum of individual ratings.

Is the body diode suitable for synchronous rectification?

Yes - the body diode has t_rr = 45 ns and Q_rr = 35 nC, making it viable for synchronous rectification in buck converters up to 400 kHz. However, external Schottky diodes remain preferred for <100 ns t_rr requirements or ultra-low forward voltage needs.

IRFR120NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR120NPBF FAQ

1.How can I place an order for IRFR120NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120NPBF reliable?

The price and inventory of IRFR120NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120NPBF is usually 5 days.

3.What payment methods are accepted for IRFR120NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120NPBF?

IRFR120NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120NPBF?

For technical support, including IRFR120NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120NPBF requirements.

6.How does Aetrix verify that IRFR120NPBF is sourced from the original manufacturer or authorized distributors?

All IRFR120NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120NPBF meets industry standards.

7.What is the process for return or replacement of IRFR120NPBF?

All IRFR120NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120NPBF part is unused and in its original packaging.

Return procedure for IRFR120NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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