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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR120NTRRPBF

Name: IRFR120NTRRPBF
Brand: Infineon Technologies
SKU: IRFR120NTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR120NTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120NTRRPBF.pdf

Description:: MOSFET N-CH 100V 9.4A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,519

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Product details

Overview

IRFR120NTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET in DPAK (TO-252) package, rated for 100 V V_DS, 8.7 A I_D (T_C = 25°C), and 0.27 Ω R_DS(on) at V_GS = 10 V. It serves as a high-efficiency power switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR120NTRRPBF datasheet, IRFR120NTRRPBF pinout, IRFR120NTRRPBF application, or IRFR120NTRRPBF equivalent, key selection factors include its low gate charge (Q_g = 16 nC), fast turn-on/turn-off times (t_on = 14 ns, t_off = 22 ns), thermal resistance (R_θJC = 2.5°C/W), and lead-free RoHS-compliant construction.

Technical Context

This MOSFET employs a planar silicon process with optimized cell geometry to achieve low conduction loss and controlled switching behavior. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable gate drive from standard 3.3 V or 5 V logic-level sources.

The device features avalanche-rated ruggedness (E_AS = 95 mJ at T_J = 25°C) and specified safe operating area (SOA) up to 100 µs pulse width, supporting robust operation under transient overloads in industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for use in 48 V bus and flyback primary-side switching
R_DS(on) @ V_GS=10 V	0.27 Ω - Enables ≤2.3 W conduction loss at 9 A continuous drain current
I_D (T_C=25°C)	8.7 A - Continuous current rating with heatsink; derates to 5.2 A at T_C=100°C
Q_g	16 nC - Low gate charge reduces driver power requirement and enables 500 kHz+ switching in SMPS
t_on/t_off	14 ns / 22 ns - Fast switching supports high-frequency operation with minimal overlap loss
R_θJC	2.5°C/W - Enables direct PCB copper pour thermal path for compact thermal design

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias; driven by logic-level or dedicated gate driver
Pin 3 (Drain)	Power output	Connected to exposed metal pad; carries full load current and requires thermal copper pour

Key Features

Feature	Design Value
Lead-free (Pb-free) and RoHS compliant	Meets EU Directive 2011/65/EU; no lead in die attach, plating, or molding compound
Avalanche energy rated (E_AS)	95 mJ at T_J = 25°C - Supports unclamped inductive switching without failure
Fast body diode recovery (t_rr)	55 ns - Reduces reverse recovery loss in synchronous rectification and H-bridge freewheeling
Enhancement-mode operation	Normally-off behavior ensures fail-safe startup and eliminates need for pull-down resistors

Applications

DC-DC Converters

Motor Drive Half-Bridge

Use Scenario: Step-down (buck) converter in telecom power supply delivering 12 V/5 A from 48 V input.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 50% duty cycle.

Use Value: 0.27 Ω R_DS(on) limits conduction loss to 7.3 W at full load, reducing heatsink size by 35% vs. higher-R_DS(on) alternatives.

Use Scenario: Low-voltage BLDC motor controller for HVAC fan, driving 24 V, 3 A phase current.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated every 60° electrical.

Use Value: 16 nC Q_g allows clean 10 ns rise time with 1 Ω gate resistor, minimizing switching loss during PWM transitions.

LED Driver Circuits

Industrial Power Supplies

Use Scenario: Constant-current LED string driver for street lighting, regulating 700 mA across 32 V forward drop.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch in buck-boost topology.

Use Value: Avalanche rating (95 mJ) absorbs inductive kickback from LED inductor during PWM off-time, eliminating snubber components.

Use Scenario: Auxiliary 5 V/2 A standby supply in industrial PLC power module.

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback converter.

Use Value: 2.5°C/W R_θJC enables direct thermal coupling to 2 oz copper plane, maintaining T_J < 105°C without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	1000 V V_DS, 10 A I_D, R_DS(on) = 0.9 Ω - Higher voltage rating but 3.3× higher on-resistance	Suitable for 400 V AC-input PFC stages; not recommended for 48 V DC-DC due to excessive conduction loss	Select only if system requires >600 V blocking capability; otherwise IRFR120NTRRPBF delivers superior efficiency below 100 V.
IXTP10N100D2	1000 V V_DS, 10 A I_D, R_DS(on) = 0.95 Ω, Q_g = 42 nC - Higher voltage, higher losses, slower switching	Targeted at high-voltage resonant converters; incompatible with high-frequency 48 V buck designs due to gate charge penalty	Prefer IRFR120NTRRPBF for any application operating below 100 V with emphasis on efficiency and thermal performance.

Compared with STP10NK100ZFP and IXTP10N100D2, the IRFR120NTRRPBF offers significantly lower R_DS(on) and Q_g, making it optimal for 48 V and lower bus systems where conduction and switching losses dominate thermal design.

Availability

IRFR120NTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and industrial power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRFR120NTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFR120NTRRPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and telecom power conversion systems.

FAQ

What is the maximum junction temperature for IRFR120NTRRPBF?

The absolute maximum junction temperature is 175°C. Operation above 150°C requires derating of continuous current per the SOA curve. Thermal design must ensure T_J remains within this limit under worst-case ambient and power dissipation conditions, using the specified R_θJC = 2.5°C/W and appropriate PCB copper area.

Is IRFR120NTRRPBF logic-level compatible?

No - IRFR120NTRRPBF is not a logic-level MOSFET. Its V_GS(th) minimum is 2.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). Driving it from 3.3 V or 5 V microcontroller outputs will result in high R_DS(on) and excessive heating; a dedicated gate driver or level-shifting circuit is required.

Does IRFR120NTRRPBF have integrated ESD protection?

No - the device does not include on-chip ESD protection diodes. Gate oxide is sensitive to electrostatic discharge; handling requires strict adherence to J-STD-020 guidelines, including grounded wrist straps, conductive foam, and ionized air environments during assembly and testing.

Can IRFR120NTRRPBF replace IRFU120 in existing designs?

Yes - IRFR120NTRRPBF is a surface-mount (DPAK) variant of the through-hole IRFU120 (TO-220AB). Both share identical electrical specifications, thermal characteristics, and pinout mapping (G-S-D). Layout redesign is required for footprint and soldering, but no circuit changes are needed for functional equivalence.

IRFR120NTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR120NTRRPBF FAQ

1.How can I place an order for IRFR120NTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120NTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120NTRRPBF reliable?

The price and inventory of IRFR120NTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120NTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR120NTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120NTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120NTRRPBF?

IRFR120NTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120NTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120NTRRPBF?

For technical support, including IRFR120NTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120NTRRPBF requirements.

6.How does Aetrix verify that IRFR120NTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR120NTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120NTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR120NTRRPBF?

All IRFR120NTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120NTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120NTRRPBF part is unused and in its original packaging.

Return procedure for IRFR120NTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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