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Infineon Technologies IRFR120ZPBF
- Part No.:
- IRFR120ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR120ZPBF.pdf
- Description:
- MOSFET N-CH 100V 8.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,641
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Product details
Overview
IRFR120ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100 V VDSS, 8.7 A continuous drain current at TC = 25°C, and 190 mΩ RDS(on) at VGS = 10 V. It integrates a robust body diode and supports repetitive avalanche operation up to TJ = 175°C, making it suitable for DC-DC converters, motor control H-bridges, and industrial power switching.
For engineers reviewing the IRFR120ZPBF datasheet, IRFR120ZPBF pinout, IRFR120ZPBF application, or IRFR120ZPBF equivalent, key selection criteria include its 175°C junction rating, 6.9 nC total gate charge, 100 V breakdown voltage, fast 26 ns rise time, and D-Pak thermal performance with RθJC = 4.28°C/W - critical for high-reliability, thermally constrained designs.
Technical Context
This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its design enables stable operation under repetitive unclamped inductive switching, supported by validated single-pulse avalanche energy of 18 mJ and tested repetitive avalanche current up to 5.2 A.
The device features a low 24 pF Crss (reverse transfer capacitance), 310 pF Ciss (input capacitance), and tightly specified gate threshold voltage (2.0–4.0 V), enabling predictable turn-on behavior across temperature and simplifying gate drive design for PWM-based topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche; defines safe operating range in 48 V bus and flyback primary-side applications. |
| RDS(on) | 190 mΩ max @ VGS = 10 V, TJ = 25°C - Directly determines conduction loss in high-current paths; impacts thermal design at >5 A loads. |
| ID (continuous) | 8.7 A @ TC = 25°C - Specifies maximum steady-state current with heatsink; derates to 6.1 A at TC = 100°C. |
| Qg | 6.9–10 nC - Total gate charge required for full turn-on; sets minimum gate driver current and switching loss budget. |
| TJ max | 175°C - Enables operation in sealed enclosures or high-ambient environments without forced cooling. |
| EAS (tested) | 18 mJ - Validated single-pulse avalanche energy; allows safe operation during inductive load turn-off transients. |
| VSD | 1.3 V max @ IS = 5.2 A - Forward voltage of integrated body diode; affects freewheeling losses in synchronous rectification or half-bridge configurations. |
Pinout & Package
IRFR120ZPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal conduction. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to power ground or low-side return path; carries full load current in low-side switch configuration. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET control node; requires <20 V absolute max rating; driven by logic-level or dedicated gate driver. |
| Pin 3 (Drain) | Power output (D) | High-side connection point; tied to PCB copper pour for heat dissipation; electrically connected to exposed metal tab on bottom of package. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 190 mΩ max at 10 V drive - reduces I²R losses in 5–8 A switching nodes, lowering thermal stress in compact layouts. |
| Repetitive avalanche rated | Tested to 5.2 A IAR and 20 mJ EAR - eliminates need for external snubbers in relay drivers and solenoid controls. |
| 175°C junction rating | Guaranteed operation up to TJ = 175°C - supports automotive under-hood and industrial motor drive applications without derating. |
| Fast switching | tr = 26 ns, tf = 23 ns @ ID = 5.2 A - enables >100 kHz PWM operation with minimal overlap loss in SMPS designs. |
| Low Crss | 24 pF - minimizes Miller effect, improving noise immunity and reducing gate drive power in high-dV/dt environments. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules. IC Role / Device Role: Low-side synchronous rectifier switch handling up to 8 A continuous current. Use Value: 190 mΩ RDS(on) and 175°C rating enable >92% efficiency at full load without heatsink in confined board space. | Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuators. IC Role / Device Role: Half-bridge low-side switch with integrated body diode for freewheeling. Use Value: Repetitive avalanche capability absorbs inductive kickback during rapid direction reversal, eliminating external clamping diodes. |
| LED Constant-Current Driver | AC-DC Auxiliary Supply |
Use Scenario: Dimmable constant-current driver for high-brightness LED strings in street lighting. IC Role / Device Role: PWM-controlled current sink switch regulating LED current up to 7 A. Use Value: Tight VGS(th) (2.0–4.0 V) ensures consistent turn-on across temperature, supporting accurate analog dimming. | Use Scenario: Auxiliary bias supply in offline SMPS for powering control ICs and gate drivers. IC Role / Device Role: Primary-side switching transistor in flyback topology operating at 65 kHz. Use Value: 100 V VDSS and low Qg (6.9 nC) reduce switching loss and EMI, improving light-load efficiency and meeting EN55022 Class B. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK100Z | 1000 V VDSS, 12 A ID, 0.7 Ω RDS(on) - higher voltage rating but significantly higher on-resistance. | Better suited for high-voltage flyback or PFC stages; not optimal for low-loss 12–48 V switching. | Select when system requires >600 V blocking; avoid where conduction loss dominates. |
| IRLZ44NPBF | 55 V VDSS, 47 A ID, 25 mΩ RDS(on) - lower voltage, much lower RDS(on), logic-level gate. | Optimized for 5–24 V battery-powered systems; unsuitable for 48 V or higher bus voltages. | Prefer for low-voltage, high-current apps like portable tools; not drop-in for 100 V designs. |
Compared with STP12NK100Z and IRLZ44NPBF, IRFR120ZPBF uniquely balances 100 V rating, sub-200 mΩ on-resistance, and D-Pak thermal performance - making it the optimal choice for mid-voltage industrial power stages where both voltage margin and conduction efficiency matter.
Availability
IRFR120ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED drivers requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFR120ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering power MOSFET development.
The HEXFET® product line was engineered specifically for high-efficiency, high-reliability power switching - targeting industrial motor drives, renewable energy inverters, and telecom power supplies where ruggedness and thermal stability are non-negotiable.
FAQ
Is IRFR120ZPBF suitable for logic-level gate drive?
No - IRFR120ZPBF has a gate threshold voltage range of 2.0–4.0 V and is specified for RDS(on) at VGS = 10 V. While it may partially turn on at 5 V, full enhancement requires ≥10 V drive to achieve 190 mΩ RDS(on); use IRL-series devices for true logic-level operation.
What is the maximum allowable case temperature for continuous operation?
The maximum continuous case temperature is 100°C, at which the continuous drain current derates to 6.1 A. Exceeding this temperature risks exceeding the 175°C junction limit unless thermal resistance is reduced via PCB copper area or heatsinking.
Does IRFR120ZPBF have avalanche energy rating for repetitive operation?
Yes - the datasheet specifies repetitive avalanche energy (EAR) up to 20 mJ and repetitive avalanche current (IAR) up to 5.2 A, validated under defined test conditions (Fig. 15–16). Safe operation requires monitoring junction temperature to ensure TJ ≤ 175°C during each avalanche event.
Can IRFR120ZPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient promotes current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥10 Ω), and thermal coupling must be carefully controlled to prevent dynamic imbalance during switching transitions.
IRFR120ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 310 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR120ZPBF FAQ
1.How can I place an order for IRFR120ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR120ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR120ZPBF reliable?
The price and inventory of IRFR120ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120ZPBF is usually 5 days.
3.What payment methods are accepted for IRFR120ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR120ZPBF?
IRFR120ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR120ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR120ZPBF?
For technical support, including IRFR120ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120ZPBF requirements.
6.How does Aetrix verify that IRFR120ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFR120ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120ZPBF meets industry standards.
7.What is the process for return or replacement of IRFR120ZPBF?
All IRFR120ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR120ZPBF part is unused and in its original packaging.
Return procedure for IRFR120ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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