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Infineon Technologies IRFR120ZTR

Part No.:
IRFR120ZTR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR120ZTR.pdf
Description:
MOSFET N-CH 100V 8.7A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,705

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Product details

Overview

IRFR120ZTR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100 V VDSS, 8.7 A continuous drain current at TC = 25°C, and 190 mΩ RDS(on) at VGS = 10 V. It features 175°C junction temperature rating, fast switching (td(on) = 8.3 ns, tr = 26 ns), and tested repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRFR120ZTR datasheet, IRFR120ZTR pinout, IRFR120ZTR application, or IRFR120ZTR equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust avalanche energy rating (EAS = 18 mJ), thermal resistance (RθJC = 4.28°C/W), and D-Pak footprint compatibility with PCB-mount thermal management.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) supports standard 5 V and 10 V logic-level drive, and its low Qg (6.9–10 nC) enables efficient high-frequency switching up to several hundred kHz.

The integrated body diode exhibits VSD = 1.3 V at 5.2 A and fast reverse recovery (trr = 24–36 ns, Qrr = 23–35 nC), making it suitable for synchronous rectification and freewheeling in hard-switched topologies where diode conduction and recovery losses must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - maximum blocking voltage before avalanche; defines use in 48 V input systems and 100 V bus applications
RDS(on)190 mΩ max at VGS = 10 V, TJ = 25°C - determines I²R conduction loss in continuous-current stages
ID (continuous)8.7 A at TC = 25°C - usable current level with adequate heatsinking on PCB copper
Qg6.9–10 nC - total gate charge defining driver strength requirement and switching loss trade-off
EAS18 mJ (tested) - single-pulse avalanche energy limit; enables unclamped inductive switching without failure
RθJC4.28°C/W - junction-to-case thermal resistance; enables direct heatsink mounting via tab for >35 W dissipation
tr/tf26 ns / 23 ns - rise/fall times at VDD = 50 V, ID = 5.2 A, RG = 53 Ω - sets minimum practical switching period

Pinout & Package

IRFR120ZTR uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free (PbF) compliant.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground or low-side switch node; carries full load current
Pin 2 (Gate)Control input (G)High-impedance MOSFET gate; requires <10 nC charge for full turn-on; sensitive to ESD
Pin 3 (Drain)Drain terminal (D)High-side power node; electrically and thermally connected to exposed metal tab; must be isolated from other layers

Key Features

FeatureDesign Value
Ultra-low RDS(on)190 mΩ max at 10 V drive - reduces conduction loss by >30% vs. legacy 100 V MOSFETs in same package
175°C operating junction temperatureEnables operation in sealed enclosures or high-ambient environments without derating
Repetitive avalanche ratedTested to 18 mJ single-pulse and validated for repetitive operation within thermal limits
Fast switching with low QgdQgd = 3.1 nC - minimizes Miller plateau time and improves dV/dt immunity
Optimized body diodetrr = 24–36 ns, Qrr = 23–35 nC - lowers switching loss during commutation in half-bridge configurations

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: 48 V input to 12 V/5 A output in telecom power shelf with forced-air cooling.

IC Role / Device Role / Timing Role: Synchronous high-side switch in fixed-frequency 250 kHz buck regulator.

Use Value: 190 mΩ RDS(on) limits conduction loss to <0.5 W at full load, enabling >94% efficiency without external heatsink.

Use Scenario: 24 V H-bridge driving 5 A stall-current brushed motor in industrial actuator.

IC Role / Device Role / Timing Role: Low-side switch with PWM duty cycle control; body diode handles freewheeling current.

Use Value: Tested repetitive avalanche allows safe inductive turn-off without snubber, reducing BOM count and board space.

LED Constant-Current DriverIndustrial PLC Output Module

Use Scenario: 36 V constant-voltage supply driving 10 A LED string with analog dimming.

IC Role / Device Role / Timing Role: High-side current-regulating switch modulated at 1–10 kHz.

Use Value: 175°C TJ rating permits operation in compact, sealed LED housings with minimal airflow.

Use Scenario: 24 V DC solid-state output channel switching 2 A resistive load in DIN-rail mounted PLC.

IC Role / Device Role / Timing Role: Final-stage power switch with overcurrent and thermal protection interface.

Use Value: RθJC = 4.28°C/W enables direct heatsink attachment for sustained 2 A load without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP10NK100ZFP100 V, 10 A, RDS(on) = 220 mΩ, TO-220FP package, no avalanche rating specifiedThrough-hole mounting only; higher RDS(on) increases conduction loss by ~16%Prefer when through-hole assembly is required and avalanche robustness is not critical
IXTP10N100D2100 V, 10 A, RDS(on) = 200 mΩ, TO-220 package, 100% avalanche tested to 20 mJLarger footprint and higher RθJA; requires heatsink for >5 A continuousChoose when higher avalanche margin is needed and board space allows TO-220

Compared with STP10NK100ZFP and IXTP10N100D2, IRFR120ZTR offers superior thermal performance in surface-mount form factor, lower gate charge for faster switching, and proven repetitive avalanche capability-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

IRFR120ZTR is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and industrial PLC output modules requiring stable component supply and long-term manufacturability.

Supply support for IRFR120ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation dating to the HEXFET® technology introduced by International Rectifier.

The IRFR120ZTR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial and commercial power conversion where ruggedness, thermal performance, and consistent parametric behavior are critical.

FAQ

What is the maximum continuous drain current for IRFR120ZTR at 100°C case temperature?

The maximum continuous drain current is 6.1 A at TC = 100°C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer at elevated case temperatures and must be verified against actual PCB layout and ambient conditions.

Does IRFR120ZTR require a gate resistor for reliable switching?

Yes-a gate resistor (typically 5–53 Ω) is required to control dI/dt and suppress ringing caused by gate loop inductance and MOSFET capacitance. The datasheet specifies switching times using RG = 53 Ω; lower values reduce switching time but increase EMI and gate driver stress.

Can IRFR120ZTR be used in avalanche mode repeatedly?

Yes-IRFR120ZTR is explicitly tested and rated for repetitive avalanche operation, provided junction temperature remains ≤175°C and single-pulse energy does not exceed 18 mJ. Safe operation requires transient thermal impedance analysis per Figure 11 and avalanche curves in Figures 15–16.

Is the drain tab electrically isolated from the PCB in D-Pak mounting?

No-the drain (Pin 3) is internally connected to the exposed metal tab, which serves as both thermal path and electrical node. When mounted on PCB, the tab must be routed to drain potential and isolated from ground or other signals using solder mask clearance and appropriate creepage/clearance design.

IRFR120ZTR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR120ZTR FAQ

1.How can I place an order for IRFR120ZTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120ZTR reliable?

The price and inventory of IRFR120ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120ZTR is usually 5 days.

3.What payment methods are accepted for IRFR120ZTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120ZTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120ZTR?

IRFR120ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120ZTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120ZTR?

For technical support, including IRFR120ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120ZTR requirements.

6.How does Aetrix verify that IRFR120ZTR is sourced from the original manufacturer or authorized distributors?

All IRFR120ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120ZTR meets industry standards.

7.What is the process for return or replacement of IRFR120ZTR?

All IRFR120ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120ZTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120ZTR part is unused and in its original packaging.

Return procedure for IRFR120ZTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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