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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR120ZTRLPBF

Name: IRFR120ZTRLPBF
Brand: Infineon Technologies
SKU: IRFR120ZTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR120ZTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120ZTRLPBF.pdf

Description:: MOSFET N-CH 100V 8.7A DPAK

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Product details

Overview

IRFR120ZTRLPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100V V_DSS, 8.7A continuous drain current at T_C = 25°C, and 190mΩ R_DS(on) at V_GS = 10V. It features 175°C maximum junction temperature, fast switching (t_d(on) = 8.3ns, t_r = 26ns), and rated repetitive avalanche capability up to T_jmax, making it suitable for DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRFR120ZTRLPBF datasheet, IRFR120ZTRLPBF pinout, IRFR120ZTRLPBF application, or IRFR120ZTRLPBF equivalent, key selection criteria include verified R_DS(on) at 10V gate drive, body diode reverse recovery charge (Q_rr = 23–35nC), thermal resistance R_θJC = 4.28°C/W, avalanche energy rating (E_AS = 18mJ tested), and D-Pak mechanical compatibility with PCB-mount thermal pads.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining robust safe operating area (SOA) across pulse widths from 10µs to 10ms. Its design integrates a low-inductance source-drain path (L_S = 7.5nH, L_D = 4.5nH) and optimized gate charge profile (Q_g = 6.9–10nC, Q_gd = 3.1nC) to support high-frequency hard-switching topologies.

The device's intrinsic body diode exhibits V_SD = 1.3V at I_S = 5.2A and t_rr = 24–36ns, enabling synchronous rectification and freewheeling in buck and half-bridge configurations without external diode supplementation. Avalanche robustness is validated per unclamped inductive test (UIL) conditions with E_AS = 18mJ (thermally limited) and E_AR = 20mJ (repetitive).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche onset; supports 48V bus systems with 2× safety margin.
R_DS(on)	190mΩ max @ V_GS = 10V - Determines conduction loss in continuous-current operation; yields ≤1.4W dissipation at 8.7A.
I_D (T_C = 25°C)	8.7A - Continuous drain current limit under ideal heatsink conditions; derates to 6.1A at T_C = 100°C.
Q_g	6.9–10nC - Total gate charge defining driver strength requirement; enables <100ns full switching with 1A peak gate drive.
R_θJC	4.28°C/W - Junction-to-case thermal resistance; allows direct thermal pad mounting to copper pour or heatsink for efficient heat extraction.
E_AS	18mJ (tested) - Single-pulse avalanche energy rating; supports reliable operation during inductive turn-off transients without failure.
Q_rr	23–35nC - Reverse recovery charge of integrated body diode; directly impacts switching loss and EMI in freewheeling phases.

Pinout & Package

IRFR120ZTRLPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and is lead-free (Pb-free) and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current and body diode return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 2.0–4.0V threshold and 10V nominal drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	High-side power node; electrically and thermally connected to large copper pad; handles 100V blocking and 8.7A conduction.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	190mΩ max at 10V drive - reduces I²R losses in high-current, low-voltage power stages such as 12V/48V DC-DC converters.
175°C junction rating	Extended thermal operating range - enables compact designs with reduced heatsinking in sealed enclosures or high ambient environments.
Fast switching speed	t_r/t_f = 26/23ns - minimizes transition losses in >100kHz SMPS applications while maintaining EMI control via defined dv/dt.
Repetitive avalanche capability	E_AR = 20mJ at T_j = 25°C - permits reliable operation under unclamped inductive load switching without external snubbers.
Low gate charge	Q_g = 6.9–10nC - lowers gate driver power demand and simplifies selection of low-cost, low-current drivers (e.g., TC4420, UCC27531).

Applications

Motor Drive Half-Bridge

Industrial DC-DC Converter

Use Scenario: High-side and low-side switching in brushed DC motor H-bridge with 24–48V supply and 5–8A peak load.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET providing grounded return path and PWM-controlled current sinking; synchronized with complementary high-side switch.

Use Value: 190mΩ R_DS(on) limits conduction loss to <1.2W at 8A, while 175°C rating sustains operation during stall conditions without thermal shutdown.

Use Scenario: Synchronous rectifier in isolated 48V-to-12V flyback or forward converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled or auxiliary winding signal.

Use Value: Body diode V_SD = 1.3V and Q_rr = 23–35nC reduce switching loss and improve efficiency by ≥2% vs. 40V Schottky, especially at light loads.

LED Driver Constant-Current Switch

UPS Inverter Output Stage

Use Scenario: High-efficiency constant-current switch in 100W+ LED streetlight drivers with 36–72V input and PWM dimming.

IC Role / Device Role / Timing Role: Primary switching element in buck or buck-boost topology regulating LED string current up to 8A.

Use Value: Fast t_r/t_f (26/23ns) enables clean PWM edges for precise dimming control; R_DS(on) stability over temperature ensures consistent current regulation.

Use Scenario: Low-side switch in 1kVA online UPS inverter stage delivering 230VAC output from 360VDC bus.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in half-bridge leg; operated at 16kHz with active clamping and dead-time control.

Use Value: Repetitive avalanche rating (E_AR = 20mJ) absorbs inductive energy during short-circuit events; SOA supports 10ms overload without desaturation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK100Z	100V V_DSS, 12A I_D, 180mΩ R_DS(on), TO-220 package, no avalanche rating specified	Requires through-hole assembly; lacks documented repetitive avalanche performance; higher R_θJA (62°C/W)	Prefer when board space allows through-hole mounting and avalanche robustness is not required.
IXTP10N100D2	100V V_DSS, 10A I_D, 220mΩ R_DS(on), TO-220AB package, 150°C T_j, no Q_rr data published	Lower thermal rating and missing body diode recovery specs limit use in high-frequency synchronous rectifiers	Select only for low-frequency (<50kHz), non-synchronous applications where gate charge and diode recovery are not critical.

Compared with STP12NK100Z and IXTP10N100D2, IRFR120ZTRLPBF offers superior thermal management (R_θJC = 4.28°C/W), verified repetitive avalanche (E_AR = 20mJ), and complete body diode characterization (Q_rr, t_rr, V_SD)-making it uniquely suited for compact, high-reliability, high-frequency power conversion.

Availability

IRFR120ZTRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, LED lighting ballasts, and telecom DC-DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR120ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in industrial, renewable energy, and transportation systems where thermal resilience and ruggedness under transient stress are critical.

FAQ

What is the maximum gate-source voltage rating for IRFR120ZTRLPBF?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks irreversible gate oxide damage. Recommended gate drive is 10V for full enhancement, with 12–15V acceptable if slew rate is controlled to avoid overshoot. Gate resistors ≥10Ω are advised to damp ringing and limit peak current during switching transitions.

Does IRFR120ZTRLPBF have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic N-channel MOSFET body diode. Key parameters include V_SD = 1.3V at I_S = 5.2A, t_rr = 24–36ns, Q_rr = 23–35nC, and I_SM = 35A pulsed source current. These values are measured under standardized conditions (T_J = 25°C, V_DD = 50V, di/dt = 100A/µs) and support synchronous rectification and freewheeling analysis.

Can IRFR120ZTRLPBF be used in parallel configurations?

Yes, but with strict layout and gate drive requirements. Matched gate resistors (±5%), symmetrical PCB routing, and Kelvin-source connections are mandatory to ensure current sharing. Thermal coupling must be uniform across devices, and gate drive must provide identical voltage waveforms with <1ns skew. Derating total current by 20% is recommended for reliability.

Is IRFR120ZTRLPBF suitable for automotive applications?

No-it is not AEC-Q101 qualified. While its 175°C rating and avalanche capability align with some automotive thermal demands, it lacks automotive-grade qualification, extended temperature validation (-40°C to +150°C), and PPAP documentation. For automotive use, consider Infineon's AEC-Q101-qualified IPA60R190P7 or IPP60R190P7 instead.

IRFR120ZTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR120ZTRLPBF FAQ

1.How can I place an order for IRFR120ZTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120ZTRLPBF reliable?

The price and inventory of IRFR120ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120ZTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR120ZTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120ZTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120ZTRLPBF?

IRFR120ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120ZTRLPBF?

For technical support, including IRFR120ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120ZTRLPBF requirements.

6.How does Aetrix verify that IRFR120ZTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR120ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120ZTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR120ZTRLPBF?

All IRFR120ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120ZTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120ZTRLPBF part is unused and in its original packaging.

Return procedure for IRFR120ZTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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