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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR12N25DPBF

Name: IRFR12N25DPBF
Brand: Infineon Technologies
SKU: IRFR12N25DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR12N25DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR12N25DPBF.pdf

Description:: MOSFET N-CH 250V 14A DPAK

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Product details

Overview

IRFR12N25DPBF from Infineon Technologies (formerly International Rectifier) is a 250V, 14A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, featuring 0.26Ω max R_DS(on) at V_GS = 10V and optimized for high-frequency DC-DC converters requiring low switching loss and robust avalanche capability.

For engineers reviewing the IRFR12N25DPBF datasheet, IRFR12N25DPBF pinout, IRFR12N25DPBF application, or IRFR12N25DPBF equivalent, key selection criteria include its 23–35 nC total gate charge, 12–19 nC Miller charge, 130 pF C_oss at V_DS = 25V, 250 mJ single-pulse avalanche energy, and 9.3 V/ns diode recovery dv/dt rating - all critical for hard-switched SMPS design.

Technical Context

This HEXFET device uses planar vertical DMOS structure with fully characterized output capacitance (C_oss = 130 pF typ. at V_DS = 25V; C_oss,eff = 130 pF over 0–200V), enabling accurate snubberless flyback and resonant converter modeling. Its gate threshold voltage (3.0–5.0 V) and forward transconductance (6.8 S typ.) support stable PWM control across industrial temperature range.

The integrated body diode exhibits 1.5 V forward voltage at 8.4 A and 140 ns reverse recovery time (trr) with 710 nC Q_rr, making it suitable for synchronous rectification and freewheeling in non-isolated buck topologies where diode recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Maximum drain-source blocking voltage; defines usable input voltage range in offline or high-bus DC-DC designs.
R_DS(on) max	0.26 Ω @ V_GS = 10V - Determines conduction loss at 14 A continuous; enables <1.5 W I²R loss at full rated current.
Q_g	23–35 nC - Total gate charge directly impacts driver power requirement and switching speed in 100–500 kHz SMPS.
E_AS	250 mJ - Single-pulse avalanche energy rating supports unclamped inductive turn-off without failure in PFC or motor drive fault conditions.
C_oss	130 pF @ V_DS = 25V - Output capacitance value used to calculate zero-voltage switching (ZVS) feasibility and resonant tank behavior.
trr	140 ns - Body diode reverse recovery time; limits maximum operating frequency in hard-switched topologies with inductive loads.
R_θJC	1.04 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for 144 W power dissipation at T_C = 25°C.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≤±30 V gate drive; 23–35 nC total charge dictates driver strength needed.
D	Drain terminal	Main high-side power path; electrically and thermally connected to exposed copper pad on bottom of D-Pak package.
S	Source terminal	Reference node for gate drive and current sensing; forms common return for body diode conduction during freewheeling.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	12–19 nC - Reduces Miller-induced switching delay and improves controllability during dV/dt transitions.
Fully characterized C_oss and C_oss,eff	130 pF (V_DS = 25V); 130 pF (0–200V sweep) - Enables precise soft-switching timing prediction in LLC and flyback converters.
High avalanche ruggedness	250 mJ E_AS, 8.4 A I_AR - Allows reliable operation under transient overcurrent or inductive load dump without external clamping.
Lead-free construction	RoHS-compliant, Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-efficiency 12V-to-1.2V point-of-load conversion in dual-phase buck regulators for Xeon/EPYC CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 14 A peak current per phase.

Use Value: 0.26 Ω R_DS(on) minimizes conduction loss; 140 ns trr ensures clean commutation with minimal shoot-through risk.

Use Scenario: 48V-to-12V isolated forward converter in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 250 V blocking and 14 A pulsed drain current.

Use Value: 250 V V_DSS and 250 mJ E_AS withstand reflected flyback spikes and line surges without derating.

LED Driver Secondary Side

Automotive DC-DC Module

Use Scenario: Constant-current buck LED driver for commercial lighting with 36–60 V input range.

IC Role / Device Role / Timing Role: High-side main switch controlling 1–3 A LED strings at 200–500 kHz PWM frequency.

Use Value: Low Q_g (23–35 nC) reduces gate driver losses; 9.3 V/ns dv/dt rating prevents false turn-on during fast voltage transitions.

Use Scenario: 24V-to-5V/3.3V non-isolated buck converter in automotive infotainment head unit power management.

IC Role / Device Role / Timing Role: Main power switch operating across -40°C to +150°C junction temperature range with 14 A peak load.

Use Value: Specified R_DS(on) tempco (0.29 V/°C) and 175°C T_J(max) ensure stable performance under engine bay thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF25	250 V V_DSS, 0.22 Ω R_DS(on), TO-220 package, higher R_θJA (65 °C/W)	Requires heatsink; unsuitable for space-constrained SMT layouts	Prefer when board-level thermal mass allows through-hole mounting and lower R_DS(on) justifies larger footprint.
IXTP12N25P	250 V V_DSS, 0.27 Ω R_DS(on), TO-220FP package, 21 nC Q_g, no specified E_AS	Lacks documented avalanche rating; limited to clamped topologies	Choose only if avalanche immunity is not required and lower gate charge outweighs reliability trade-off.

Compared with STP14NF25 and IXTP12N25P, IRFR12N25DPBF uniquely combines D-Pak SMT compatibility, verified 250 mJ avalanche capability, and tightly specified C_oss/Q_gd - making it optimal for compact, high-reliability SMPS where layout density and fault tolerance are co-constrained.

Availability

IRFR12N25DPBF is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and automotive DC-DC modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR12N25DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® power MOSFET product line with full documentation and application engineering resources.

This device belongs to the HEXFET® family designed specifically for high-frequency switching power conversion - emphasizing low gate charge, controlled capacitance profiles, and rugged avalanche performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR12N25DPBF supports 9.7 A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual PCB copper area and airflow in the target application.

Does this MOSFET have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic p-n junction body diode with 1.5 V forward voltage at 8.4 A and 25°C, 140 ns reverse recovery time (trr), and 710 nC reverse recovery charge (Q_rr). These values are measured under standardized conditions (di/dt = 100 A/µs) and define freewheeling behavior in buck and flyback topologies.

Is IRFR12N25DPBF RoHS-compliant and lead-free?

Yes, the "PbF" suffix confirms lead-free termination per RoHS Directive 2011/65/EU. The device uses matte tin plating and meets JEDEC J-STD-020 MSL1 requirements, allowing standard Pb-free reflow profiles without special baking or handling precautions.

Can this MOSFET be used in avalanche mode for circuit protection?

Yes - it is fully characterized for unclamped inductive switching with 250 mJ single-pulse avalanche energy (E_AS) and 8.4 A avalanche current (I_AR). Application Note AN-1001 provides test circuit details and derating guidance for repetitive avalanche use in PFC and motor drive circuits.

IRFR12N25DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR12N25DPBF FAQ

1.How can I place an order for IRFR12N25DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR12N25DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR12N25DPBF reliable?

The price and inventory of IRFR12N25DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR12N25DPBF is usually 5 days.

3.What payment methods are accepted for IRFR12N25DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR12N25DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR12N25DPBF?

IRFR12N25DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR12N25DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR12N25DPBF?

For technical support, including IRFR12N25DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR12N25DPBF requirements.

6.How does Aetrix verify that IRFR12N25DPBF is sourced from the original manufacturer or authorized distributors?

All IRFR12N25DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR12N25DPBF meets industry standards.

7.What is the process for return or replacement of IRFR12N25DPBF?

All IRFR12N25DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR12N25DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR12N25DPBF part is unused and in its original packaging.

Return procedure for IRFR12N25DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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