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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR12N25DTRLP

Name: IRFR12N25DTRLP
Brand: Infineon Technologies
SKU: IRFR12N25DTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR12N25DTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR12N25DTRLP.pdf

Description:: MOSFET N-CH 250V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR12N25DTRLP from Infineon Technologies (formerly International Rectifier) is a 250V, 14A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 0.26Ω R_DS(on) at V_GS = 10V and optimized for high-frequency DC-DC converters requiring low switching loss and robust avalanche capability.

For engineers reviewing the IRFR12N25DTRLP datasheet, IRFR12N25DTRLP pinout, IRFR12N25DTRLP application, or IRFR12N25DTRLP equivalent, key selection criteria include its 23 nC total gate charge, 12–19 nC Miller charge, 140 ns diode reverse recovery time, and 250 mJ single-pulse avalanche energy - all critical for SMPS hard-switching reliability and thermal management.

Technical Context

This HEXFET device uses planar vertical DMOS technology with fully characterized C_oss (130 pF typ. at V_DS = 25V) and C_rss (22 pF), enabling accurate snubberless flyback and resonant converter design. Its gate threshold voltage (3.0–5.0 V) ensures stable turn-on under wide V_GS margin conditions.

The integrated body diode exhibits 1.5 V forward voltage at 8.4 A and 140 ns trr with 710 nC Q_rr, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Withstands up to 250 V drain-source blocking voltage before breakdown.
R_DS(on) max	0.26 Ω @ V_GS = 10 V, I_D = 8.4 A - Defines conduction loss in continuous operation at rated current.
I_D cont @ T_C = 25°C	14 A - Maximum continuous drain current with case temperature held at 25°C and adequate heatsinking.
Q_g typ	23 nC - Total gate charge required to switch device; directly impacts driver power and switching speed.
E_AS single-pulse	250 mJ - Energy the MOSFET can absorb during unclamped inductive switching without failure.
trr / Q_rr	140 ns / 710 nC - Body diode reverse recovery behavior critical for minimizing shoot-through and EMI in bridge circuits.
R_θJC	1.04 °C/W - Junction-to-case thermal resistance; enables direct heatsink thermal modeling for PCB-mount designs.

Pinout & Package

IRFR12N25DTRLP is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal performance and mechanical stability on PCBs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Common return path for load current; connects to ground or low-side reference in most topologies.
Pin 2 (Gate)	Control electrode	Receives gate drive signal; requires <±30 V absolute rating and low-impedance drive to manage 23 nC Q_g.
Pin 3 (Drain)	High-side output terminal	Connects to input rail or transformer primary; electrically tied to exposed copper pad for thermal conduction.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	12–19 nC - Reduces Miller-induced switching delay and improves hard-switching efficiency in high-dv/dt environments.
Fully characterized C_oss & C_rss	130 pF / 22 pF @ V_DS = 25 V - Enables precise soft-switching timing and snubberless ZVS/ZCS design.
Lead-free (Pb-free) construction	RoHS-compliant D-Pak with matte tin plating - Eliminates lead-based solder compatibility concerns in modern assembly lines.
Robust avalanche rating	250 mJ single-pulse E_AS - Supports reliable operation in unclamped inductive switching without external clamping circuits.

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-efficiency 12 V → 1.2 V point-of-load conversion in dual-phase server VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck topology.

Use Value: 0.26 Ω R_DS(on) and 14 A continuous rating minimize conduction loss at high current density; fast body diode (140 ns trr) reduces dead-time losses.

Use Scenario: 48 V input isolated flyback or forward converter in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Primary-side switching element operating at 100–300 kHz.

Use Value: 250 V V_DSS provides 20% margin over 48 V × 4× reflected transients; 250 mJ E_AS sustains repeated inductive turn-off stress.

Automotive On-Board Charger (OBC)

LED Driver Power Switch

Use Scenario: Secondary-side synchronous rectification in 3.3 kW bidirectional OBC AC/DC stage.

IC Role / Device Role / Timing Role: High-current, high-temperature rectifier in LLC resonant secondary.

Use Value: 9.7 A continuous current at T_C = 100°C supports sustained operation in sealed enclosures; 175°C T_J(max) ensures automotive-grade thermal headroom.

Use Scenario: Constant-current switching regulator for high-brightness LED strings in street lighting.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch in buck-derived constant-current topology.

Use Value: Low Q_g (23 nC) enables clean 1–20 kHz dimming control without gate drive overshoot; 1.5 V V_SD minimizes forward drop penalty during PWM off-cycle freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF25	250 V, 14 A, R_DS(on) = 0.28 Ω, Q_g = 27 nC, TO-220 package	Through-hole mounting; higher R_θJA (62 °C/W) limits high-power density use	Preferred where manual rework or legacy through-hole assembly is required.
IXTP14N25P	250 V, 14 A, R_DS(on) = 0.27 Ω, Q_g = 25 nC, TO-220AB package	Higher gate charge and larger footprint than D-Pak; no lead-free option indicated in datasheet	Suitable for industrial controls needing proven field reliability but less stringent thermal constraints.

Compared with STP14NF25 and IXTP14N25P, IRFR12N25DTRLP offers superior thermal performance via D-Pak's 1.04 °C/W R_θJC, lower Q_gd, and RoHS compliance - making it optimal for compact, high-frequency, surface-mount SMPS designs demanding repeatable manufacturability.

Availability

IRFR12N25DTRLP is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IRFR12N25DTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and system-level integration.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 100 kHz with minimal thermal derating.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR12N25DTRLP has a specified maximum operating junction temperature of +175°C. This rating applies under steady-state thermal conditions with proper PCB copper area and heatsinking. Derating begins at T_C > 25°C per the linear derating factor of 0.96 W/°C, and the device must remain within Safe Operating Area (SOA) limits shown in Figure 8 of the datasheet.

Does this MOSFET require a gate resistor for reliable switching?

Yes - a gate resistor (typically 6.8 Ω, as used in characterization) is recommended to dampen ringing, limit peak gate current, and control dv/dt-induced Miller turn-on. Without it, the 23 nC Q_g and low C_iss/C_rss ratio may cause unintended oscillation or shoot-through in bridge configurations, especially at high switching frequencies (>200 kHz).

Can IRFR12N25DTRLP be used in avalanche mode repeatedly?

No - while rated for 250 mJ single-pulse avalanche energy (E_AS), its repetitive avalanche energy (E_AR) is only 14 mJ. Repeated unclamped inductive switching beyond this value risks cumulative junction damage. For repetitive stress, external clamping (RCD snubber or TVS) is mandatory.

Is the body diode suitable for synchronous rectification?

Yes - the intrinsic body diode has a forward voltage of 1.5 V at 8.4 A and 140 ns reverse recovery time, making it usable in low-frequency synchronous rectification (e.g., ≤100 kHz). However, for high-frequency or high-efficiency designs, an external Schottky or GaN FET is preferred due to lower V_F and near-zero Q_rr.

IRFR12N25DTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR12N25DTRLP FAQ

1.How can I place an order for IRFR12N25DTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR12N25DTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR12N25DTRLP reliable?

The price and inventory of IRFR12N25DTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR12N25DTRLP is usually 5 days.

3.What payment methods are accepted for IRFR12N25DTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR12N25DTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR12N25DTRLP?

IRFR12N25DTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR12N25DTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR12N25DTRLP?

For technical support, including IRFR12N25DTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR12N25DTRLP requirements.

6.How does Aetrix verify that IRFR12N25DTRLP is sourced from the original manufacturer or authorized distributors?

All IRFR12N25DTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR12N25DTRLP meets industry standards.

7.What is the process for return or replacement of IRFR12N25DTRLP?

All IRFR12N25DTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFR12N25DTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR12N25DTRLP part is unused and in its original packaging.

Return procedure for IRFR12N25DTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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