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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR12N25DTRPBF

Name: IRFR12N25DTRPBF
Brand: Infineon Technologies
SKU: IRFR12N25DTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR12N25DTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR12N25DTRPBF.pdf

Description:: MOSFET N-CH 250V 14A DPAK

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Product details

Overview

IRFR12N25DTRPBF from Infineon Technologies (formerly International Rectifier) is a 250V, 14A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 0.26Ω R_DS(on) at V_GS = 10V and optimized for high-frequency DC-DC converters requiring low gate charge (23 nC typ.) and fast switching (t_r = 25 ns, t_f = 9.2 ns).

For engineers reviewing the IRFR12N25DTRPBF datasheet, IRFR12N25DTRPBF pinout, IRFR12N25DTRPBF application, or IRFR12N25DTRPBF equivalent, key selection criteria include avalanche energy rating (250 mJ single-pulse), body diode recovery performance (t_rr = 140 ns, Q_rr = 710 nC), and thermal resistance (R_θJC = 1.04°C/W) for SMPS thermal design.

Technical Context

This HEXFET device uses planar vertical DMOS technology with fully characterized output capacitance (C_oss = 130 pF at V_DS = 25V; C_oss,eff = 130 pF over 0–200V sweep), enabling accurate snubberless flyback and resonant converter modeling. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 5V/10V logic drivers.

The integrated body diode exhibits low forward voltage (V_SD = 1.5 V at I_S = 8.4 A, T_J = 25°C) and controlled reverse recovery (dv/dt = 9.3 V/ns), supporting synchronous rectification and freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Maximum blocking voltage before avalanche onset; supports 200V bus designs with 25% margin.
R_DS(on) max	0.26 Ω @ V_GS = 10V, I_D = 8.4A - Defines conduction loss in continuous conduction mode (CCM) operation.
Q_g typ.	23 nC - Determines gate drive power requirement and switching speed in PWM controllers.
E_AS	250 mJ - Enables unclamped inductive switching survival in PFC and LLC primary-side applications.
t_r/t_f	25 ns / 9.2 ns - Supports >500 kHz switching frequencies with minimal overlap loss in half-bridge configurations.
R_θJC	1.04 °C/W - Enables 144 W power dissipation with ≤150°C junction rise above 25°C case temperature.
C_oss,eff	130 pF - Critical for calculating zero-voltage switching (ZVS) timing and resonant tank design.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal enhancement and mechanical robustness in automated PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to power ground or low-side switch node.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires <6.8Ω series gate resistor to damp ringing.
Pin 3 (Drain)	Power output (D)	High-current drain connection; tied to exposed copper pad for thermal conduction to PCB.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	12 nC / 23 nC = 0.52 - Reduces Miller-induced shoot-through risk in bridge-leg configurations.
Fully characterized C_oss vs. V_DS	130 pF @ 25V → 50 pF @ 200V - Enables precise soft-switching timing prediction across full operating range.
Avalanche-rated	250 mJ single-pulse E_AS - Eliminates need for external clamping in inductive load switching.
Lead-free (RoHS-compliant)	"PBF" suffix confirms Pb-free plating and halogen-free molding compound per JEDEC J-STD-020.

Applications

AC-DC Adapter Primary Switch

Server VRM High-Side Switch

Use Scenario: 65W–120W offline flyback converter operating at 100–130 kHz with universal AC input.

IC Role / Device Role / Timing Role: Primary-side switching element handling 250V DC link and delivering regulated 12V/5V outputs.

Use Value: Low R_DS(on) minimizes conduction loss at light-to-moderate loads; fast t_f reduces dead-time losses in quasi-resonant control.

Use Scenario: 12V input to 1.2V/150A CPU core supply using multiphase buck topology.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500–1000 kHz phase-leg, driven by dedicated gate driver IC.

Use Value: Low Q_g enables efficient 100 ns gate transitions; low C_oss,eff maintains ZVS across load range.

Industrial Motor Drive Half-Bridge

Telecom DC-DC Brick Output Stage

Use Scenario: 24V/48V BLDC inverter stage controlling 300W brushless motor with trapezoidal commutation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge, conducting up to 14A continuous current.

Use Value: Robust body diode (I_AR = 8.4A, t_rr = 140 ns) sustains regenerative braking without external diodes.

Use Scenario: 48V-to-12V intermediate bus converter in 1U telecom shelf with forced-air cooling.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: 1.04°C/W R_θJC allows direct heatsink mounting on PCB; 175°C T_J(max) supports 85°C ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK25Z	R_DS(on) = 0.22Ω (lower), Q_g = 26 nC (higher), TO-220 package	Requires through-hole assembly and larger heatsink footprint	Preferred where board space permits and lower conduction loss outweighs gate drive overhead
IXTP12N25P	R_DS(on) = 0.28Ω (higher), Q_g = 18 nC (lower), TO-220FP package	Vertical mount with isolated tab; higher thermal resistance (R_θJC = 1.6°C/W)	Selected when electrical isolation from heatsink is mandatory and switching frequency exceeds 1 MHz

Compared with STP14NK25Z and IXTP12N25P, IRFR12N25DTRPBF delivers optimal balance of low R_DS(on), moderate Q_g, and surface-mount thermal efficiency-making it the preferred choice for space-constrained, high-frequency SMPS where D-Pak mechanical reliability is required.

Availability

IRFR12N25DTRPBF is available at Aetrix Electronics and suitable for AC-DC adapters, server VRMs, industrial motor drives, and telecom DC-DC bricks requiring stable component supply and long-term production continuity.

Supply support for IRFR12N25DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and motor control systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (I_D) at T_C = 100°C is 9.7 A with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the D-Pak package's junction-to-case thermal resistance (1.04°C/W) and safe operating area constraints.

Does IRFR12N25DTRPBF have avalanche capability, and how is it rated?

Yes, it is fully rated for unclamped inductive switching: single-pulse avalanche energy (E_AS) is 250 mJ at T_J = 25°C, and repetitive avalanche energy (E_AR) is 14 mJ. Avalanche current (I_AR) is 8.4 A, verified per JEDEC JESD24-1 test conditions.

Can this MOSFET be used with 5V gate drive?

No-its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V, the device operates in weak inversion with significantly elevated R_DS(on); use only with 10 V or higher gate drive for specified performance.

What is the significance of the "PBF" suffix in the part number?

The "PBF" suffix indicates lead-free (Pb-free) construction compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1. It denotes matte tin plating and halogen-free epoxy molding compound, validated for reflow soldering up to 260°C peak.

IRFR12N25DTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR12N25DTRPBF FAQ

1.How can I place an order for IRFR12N25DTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR12N25DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR12N25DTRPBF reliable?

The price and inventory of IRFR12N25DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR12N25DTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR12N25DTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR12N25DTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR12N25DTRPBF?

IRFR12N25DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR12N25DTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR12N25DTRPBF?

For technical support, including IRFR12N25DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR12N25DTRPBF requirements.

6.How does Aetrix verify that IRFR12N25DTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR12N25DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR12N25DTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR12N25DTRPBF?

All IRFR12N25DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR12N25DTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR12N25DTRPBF part is unused and in its original packaging.

Return procedure for IRFR12N25DTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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