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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR12N25DTRRP

Name: IRFR12N25DTRRP
Brand: Infineon Technologies
SKU: IRFR12N25DTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR12N25DTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR12N25DTRRP.pdf

Description:: MOSFET N-CH 250V 14A DPAK

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Product details

Overview

IRFR12N25DTRRP from Infineon Technologies (formerly International Rectifier) is a 250V, 14A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 0.26Ω R_DS(on) at V_GS = 10V and optimized for high-frequency DC-DC converters. It integrates a robust body diode with 140ns reverse recovery time and supports unclamped inductive switching up to 250mJ avalanche energy.

For engineers reviewing the IRFR12N25DTRRP datasheet, IRFR12N25DTRRP pinout, IRFR12N25DTRRP application, or IRFR12N25DTRRP equivalent, key selection criteria include its 9.3V/ns peak diode recovery dv/dt rating, fully characterized C_oss (130pF @ V_DS = 25V), low 23nC typical gate charge, and thermal resistance of 1.04°C/W junction-to-case - critical for SMPS thermal design and switching loss optimization.

Technical Context

This HEXFET device employs planar vertical DMOS structure with optimized charge balance for fast switching and rugged avalanche performance. Its gate threshold voltage (3.0–5.0V) enables reliable TTL/CMOS-level drive, while the 22pF reverse transfer capacitance (C_rss) and 810pF input capacitance (C_iss) support stable high-frequency operation up to several hundred kHz.

The MOSFET's dynamic parameters are fully characterized across temperature: R_DS(on) increases by <0.29V/°C with junction temperature, and its safe operating area (SOA) is defined up to 100µs pulse width at 250V, limited by R_DS(on) conduction at longer durations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250V - Maximum drain-source blocking voltage; defines maximum bus voltage in flyback or forward converters.
R_DS(on) max	0.26Ω @ V_GS = 10V, I_D = 8.4A - Directly determines conduction loss and heatsink sizing at full load.
I_D continuous	14A @ T_C = 25°C - Specifies maximum steady-state current under ideal heatsinking conditions.
Q_g typ	23nC - Gate drive energy requirement; impacts driver IC selection and switching loss at 100–500kHz.
C_oss eff	130pF - Effective output capacitance used in resonant transition timing and snubber design.
E_AS	250mJ - Single-pulse avalanche energy rating; enables robustness against inductive turn-off transients without external clamping.
R_θJC	1.04°C/W - Junction-to-case thermal resistance; enables direct calculation of die temperature rise from case temperature measurement.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to power ground or low-side return path.
Pin 2 (Gate)	Control terminal (G)	High-impedance input requiring <23nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output terminal (D)	Connected to exposed copper pad on bottom; carries full load current and dissipates heat into PCB copper.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	12nC typical - reduces Miller effect, enabling faster turn-off and improved hard-switching stability.
Fully characterized C_oss	130pF effective value - allows accurate prediction of turn-on loss and ZVS boundary in resonant topologies.
Rugged avalanche capability	250mJ single-pulse rating - eliminates need for external RCD clamp in many flyback designs.
Lead-free construction	RoHS-compliant, Pb-free plating - meets industrial and automotive compliance requirements without derating.
Fast body diode	140ns t_rr, 710nC Q_rr - minimizes reverse recovery loss in synchronous rectification or bidirectional applications.

Applications

AC-DC Adapter

Server VRM

Use Scenario: 65W–120W offline flyback converter with primary-side switching.

IC Role / Device Role: Primary-side high-voltage switch handling 250V DC bus and 14A peak currents.

Use Value: 0.26Ω R_DS(on) and 23nC Q_g enable >88% efficiency at 100kHz while maintaining thermal margin on 2-layer PCB.

Use Scenario: Multiphase buck converter for CPU core voltage regulation (1.0–1.8V @ 100A+).

IC Role / Device Role: Low-side synchronous rectifier MOSFET in 300kHz–1MHz phase-leg.

Use Value: Fast 140ns body diode recovery and low C_oss reduce shoot-through risk and improve light-load efficiency.

Industrial Motor Drive

LED Driver

Use Scenario: 24V–48V half-bridge inverter for BLDC fan control.

IC Role / Device Role: High-side or low-side switch in 20kHz PWM-driven bridge leg.

Use Value: 250V V_DSS provides 2× safety margin over 48V rail; 9.7A I_D @ 100°C supports continuous 3A motor current with margin.

Use Scenario: Isolated buck-boost LED driver for street lighting (36–72V output, 1.5A constant current).

IC Role / Device Role: Primary switch in quasi-resonant topology operating at variable frequency up to 350kHz.

Use Value: Fully characterized C_oss and low Q_gd enable precise ZVS tuning across line/load range, reducing EMI and improving reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK25Z	250V, 14A, R_DS(on) = 0.28Ω, Q_g = 26nC, TO-220 package	Through-hole mounting; higher thermal resistance (R_θJA = 62°C/W vs. 50°C/W for D-Pak)	Preferred where manual assembly or high-reliability through-hole is required; avoid in space-constrained SMT designs.
IXTP12N25P	250V, 12A, R_DS(on) = 0.27Ω, Q_g = 21nC, TO-220FP package	Lower continuous current rating; same voltage class but reduced SOA at high T_C	Suitable for lower-power (<100W) applications where gate drive energy is prioritized over peak current headroom.

Compared with STP14NK25Z and IXTP12N25P, IRFR12N25DTRRP offers superior thermal performance via D-Pak mounting, higher current capability at elevated temperatures, and tighter C_oss characterization - making it optimal for compact, high-density SMPS designs demanding repeatable switching behavior.

Availability

IRFR12N25DTRRP is available at Aetrix Electronics and suitable for AC-DC adapters, server VRMs, industrial motor drives, and LED drivers requiring stable component supply, RoHS compliance, and consistent parametric performance across production lots.

Supply support for IRFR12N25DTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating from 100kHz to 1MHz.

FAQ

Is IRFR12N25DTRRP pin-compatible with IRFR12N25DPbF?

Yes - IRFR12N25DTRRP and IRFR12N25DPbF share identical D-Pak (TO-252) package, pinout, and electrical specifications. The "TRRP" suffix denotes tape-and-reel packaging with lead-free finish, while "PbF" indicates lead-free compliance; both meet RoHS and have identical R_DS(on), Q_g, and avalanche ratings.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-to-source voltage is ±30V, but the device is fully enhanced at V_GS = 10V and rated for continuous operation at 10V–15V. Driving above 15V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD sensitivity; 12V is the recommended practical maximum for robust long-term reliability.

Can IRFR12N25DTRRP be used in linear mode (as a pass transistor)?

No - this MOSFET is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) graph shows strict pulse-width limitations even at low V_DS, and the R_DS(on) vs. temperature curve exhibits positive TC only above ~100°C. Linear use risks thermal runaway and catastrophic failure due to lack of SOA derating data in that region.

Does the body diode support synchronous rectification?

Yes - the integrated body diode has 140ns reverse recovery time and 710nC Q_rr at I_F = 8.4A, making it suitable for low-frequency synchronous rectification (e.g., <100kHz flyback secondary side). However, for high-frequency (>300kHz) or high-current (>10A) synchronous rectification, an external Schottky diode or dedicated SR controller is recommended to minimize recovery loss.

IRFR12N25DTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR12N25DTRRP FAQ

1.How can I place an order for IRFR12N25DTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR12N25DTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR12N25DTRRP reliable?

The price and inventory of IRFR12N25DTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR12N25DTRRP is usually 5 days.

3.What payment methods are accepted for IRFR12N25DTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR12N25DTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR12N25DTRRP?

IRFR12N25DTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR12N25DTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR12N25DTRRP?

For technical support, including IRFR12N25DTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR12N25DTRRP requirements.

6.How does Aetrix verify that IRFR12N25DTRRP is sourced from the original manufacturer or authorized distributors?

All IRFR12N25DTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR12N25DTRRP meets industry standards.

7.What is the process for return or replacement of IRFR12N25DTRRP?

All IRFR12N25DTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFR12N25DTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR12N25DTRRP part is unused and in its original packaging.

Return procedure for IRFR12N25DTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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