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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N15DPBF

Name: IRFR13N15DPBF
Brand: Infineon Technologies
SKU: IRFR13N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N15DPBF.pdf

Description:: MOSFET N-CH 150V 14A DPAK

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Product details

Overview

IRFR13N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 14 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and active-clamp forward topologies. It features 0.18 Ω R_DS(on) at V_GS = 10 V, 19 nC typical total gate charge, and 130 mJ single-pulse avalanche energy - enabling robust switching in telecom 48 V input power supplies.

For engineers reviewing the IRFR13N15DPBF datasheet, IRFR13N15DPBF pinout, IRFR13N15DPBF application, or IRFR13N15DPBF equivalent, key selection criteria include its 150 V V_BR(DSS), low 9.4 nC Miller charge, 1.75 °C/W R_θJC, body diode t_rr of 110 ns, and lead-free D-Pak thermal performance in SMPS designs.

Technical Context

This HEXFET device uses planar vertical DMOS technology with fully characterized C_oss (110 pF effective), C_iss (620 pF), and Crss (38 pF) to support accurate snubberless design in hard-switched topologies. Its gate threshold voltage (3.0–5.5 V) and 0.17 V/°C V_BR(DSS) temperature coefficient ensure stable operation across -55°C to +175°C junction range.

The integrated body diode exhibits 1.3 V forward drop at 8.3 A and 110 ns reverse recovery time under di/dt = 100 A/µs - critical for synchronous rectification and freewheeling paths in active-clamp forward converters where diode recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	150 V - Withstands 48 V input-derived bus voltages with ≥3× safety margin in telecom SMPS
R_DS(on) max	0.18 Ω @ V_GS = 10 V, T_J = 25°C - Limits conduction loss to ≤25 W at 14 A continuous drain current
Q_g typ	19 nC - Enables efficient gate drive with <1.9 W average gate power at 500 kHz and 10 V swing
E_AS	130 mJ - Sustains unclamped inductive switching events without failure in active-clamp circuits
t_rr	110 ns - Reduces diode recovery-related voltage overshoot and EMI in high-dv/dt switching nodes
R_θJC	1.75 °C/W - Allows 86 W power dissipation with <150°C junction rise above 25°C case temperature
C_oss,eff	110 pF - Defines hard-switching energy loss (½ × C_oss × V²) during turn-on transitions

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal conduction and mechanical stability on PCB. Standard three-terminal configuration: Drain (tab and pin 2), Source (pin 1), Gate (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal / body diode cathode	Primary return path for load current; ties to power ground plane with low-inductance layout
Pin 2 (Drain)	Drain terminal / body diode anode / thermal pad	High-side switching node; requires copper pour for heat sinking and EMI control
Pin 3 (Gate)	Control input	High-impedance MOS gate requiring <11 Ω series resistance to damp ringing and limit dv/dt-induced turn-on

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	49% (9.4/19 nC) - Improves controllability during Miller plateau and reduces risk of shoot-through
Fully characterized C_oss vs. V_DS	130 pF @ 25 V, 62 pF @ 120 V - Enables precise calculation of turn-on switching loss across full operating range
Avalanche-rated	130 mJ E_AS - Eliminates need for external clamping in inductive load switching applications
Lead-free construction	RoHS-compliant D-Pak with Pb-free terminations - Meets IPC-J-STD-020 reflow profile requirements

Applications

Telecom 48 V Input SMPS

Active Clamp Forward Converter

Use Scenario: Primary-side switch in isolated 48 V input DC-DC modules delivering 12 V/20 A output for base station RF power amplifiers.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–500 kHz with zero-voltage switching assisted by active clamp winding.

Use Value: 0.18 Ω R_DS(on) and 19 nC Q_g minimize combined conduction and switching losses, improving efficiency to >92% at full load.

Use Scenario: Clamp switch in active-clamp forward converter handling 300–400 V reflected reset voltage in server VRM front-end stages.

IC Role / Device Role / Timing Role: Synchronized clamp FET conducting during transformer reset phase, absorbing leakage inductance energy.

Use Value: 130 mJ E_AS and 150 V rating safely absorb reset energy without snubber, reducing component count and board area.

Industrial DC-DC Isolated Supplies

High-Frequency LLC Auxiliary Supplies

Use Scenario: Primary switch in 24–48 V input industrial power supplies powering PLC I/O modules with wide ambient temperature range (-40°C to +85°C).

IC Role / Device Role / Timing Role: Hard-switched MOSFET in flyback or forward topology with duty cycle modulation for regulation.

Use Value: -55°C to +175°C T_J rating and 0.17 V/°C V_BR(DSS) TC ensure stable breakdown margin across extended temperature operation.

Use Scenario: Synchronous rectifier driver FET in auxiliary LLC resonant supply powering gate drivers and bias rails in motor inverters.

IC Role / Device Role / Timing Role: Low-side switch controlling auxiliary rail sequencing and soft-start timing via gate-controlled body diode conduction.

Use Value: 110 ns t_rr and 1.3 V V_SD enable fast, low-loss body-diode conduction during dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF15	150 V, 14 A, R_DS(on) = 0.22 Ω, Q_g = 22 nC, TO-220 package	Higher R_DS(on) and gate charge; through-hole mounting limits high-frequency layout	Prefer when thermal mass outweighs switching speed; avoid in >300 kHz designs
IXTP14N15P	150 V, 14 A, R_DS(on) = 0.19 Ω, Q_g = 24 nC, TO-220FP package	Slightly higher Q_g; same voltage/current but inferior C_oss characterization and no avalanche rating	Acceptable only if avalanche immunity is not required and layout allows larger footprint

Compared with STP14NF15 and IXTP14N15P, IRFR13N15DPBF delivers lower switching loss via reduced Q_gd and superior C_oss data, plus verified avalanche capability - making it uniquely suited for compact, high-reliability telecom and industrial SMPS where thermal density and fault tolerance are critical.

Availability

IRFR13N15DPBF is available at Aetrix Electronics and suitable for telecom 48 V input SMPS, active-clamp forward converters, and industrial DC-DC isolated supplies requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFR13N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015, integrating its high-performance power MOSFET portfolio into Infineon's broader power semiconductor ecosystem.

This device belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-frequency switching power conversion in telecom, industrial, and computing applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR13N15DPBF supports 9.8 A continuous drain current at T_C = 100°C with V_GS = 10 V, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within its 1.75 °C/W R_θJC specification under sustained load conditions.

Does this MOSFET have avalanche capability, and is it rated for repetitive events?

Yes - the device is fully rated for single-pulse avalanche energy (E_AS) up to 130 mJ and repetitive avalanche energy (E_AR) up to 8.6 mJ. These values are measured under standardized unclamped inductive test conditions (Fig. 12a–c) and confirm suitability for circuits with inductive switching stress, such as active-clamp forward converters.

Can the body diode be used for synchronous rectification in a forward converter?

The body diode has a 1.3 V forward voltage at 8.3 A and 110 ns reverse recovery time, making it usable for low-duty-cycle freewheeling. However, its Q_rr of 520 nC and lack of soft-recovery characteristics limit efficiency in high-frequency synchronous rectification; external Schottky or SiC diodes are preferred for optimal performance.

Is the D-Pak package compatible with standard reflow soldering profiles?

Yes - the IRFR13N15DPBF is RoHS-compliant and lead-free, qualified for standard Pb-free reflow profiles (peak 260°C for 10 seconds at 1.6 mm from case). Its D-Pak thermal pad requires adequate stencil design and solder paste volume to ensure void-free thermal interface and mechanical reliability.

IRFR13N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N15DPBF FAQ

1.How can I place an order for IRFR13N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N15DPBF reliable?

The price and inventory of IRFR13N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFR13N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N15DPBF?

IRFR13N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N15DPBF?

For technical support, including IRFR13N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N15DPBF requirements.

6.How does Aetrix verify that IRFR13N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFR13N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFR13N15DPBF?

All IRFR13N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N15DPBF part is unused and in its original packaging.

Return procedure for IRFR13N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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