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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N15DTR

Name: IRFR13N15DTR
Brand: Infineon Technologies
SKU: IRFR13N15DTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N15DTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N15DTR.pdf

Description:: MOSFET N-CH 150V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR13N15DTR from Infineon Technologies is a 150 V, 14 A N-channel D-Pak (TO-252AA) power MOSFET optimized for high-frequency DC-DC converters in telecom 48 V input active clamp forward topologies. It features 0.18 Ω R_DS(on) at V_GS = 10 V, 19 nC total gate charge, and 130 mJ single-pulse avalanche energy - enabling robust switching with low conduction and controlled dynamic losses.

For engineers reviewing the IRFR13N15DTR datasheet, IRFR13N15DTR pinout, IRFR13N15DTR application, or IRFR13N15DTR equivalent, key selection criteria include its 150 V V_DSS, 0.18 Ω on-resistance at 10 V drive, D-Pak thermal performance (R_θJC = 1.75 °C/W), body diode recovery time (110 ns), and avalanche-rated operation in unclamped inductive switching.

Technical Context

This HEXFET® MOSFET employs planar vertical DMOS technology with fully characterized output capacitance (C_oss = 130 pF at V_DS = 25 V; C_oss,eff = 110 pF across 0–120 V), enabling accurate snubberless design in hard-switched SMPS. Its gate charge profile (Q_gd/Q_gs = 9.4/5.5 nC) supports fast, low-loss turn-on/turn-off transitions under 11 Ω gate resistance.

The device integrates a co-packaged, low-V_SD (1.3 V @ 8.3 A) intrinsic body diode with 520 nC reverse recovery charge and 3.8 V/ns peak dv/dt immunity - critical for reliable operation in synchronous rectification and active-clamp circuits where diode commutation stresses are high.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands 48 V telecom bus transients up to 120 V without breakdown.
R_DS(on) max	0.18 Ω @ V_GS = 10 V - Delivers ≤25 W conduction loss at 14 A continuous drain current.
Q_g	19 nC typ - Enables <100 ns switching transitions with standard 11 Ω gate driver impedance.
E_AS	130 mJ - Supports unclamped inductive switching at 8.3 A without failure in flyback or forward converters.
C_oss,eff	110 pF - Defines hard-switching energy loss (½ × C_oss × V²) during turn-on in 100–120 V rail applications.
trr	110 ns - Limits diode reverse recovery stress and EMI generation during high-dv/dt commutation.
R_θJC	1.75 °C/W - Allows 86 W power dissipation with ≤150 °C junction rise above 25 °C case temperature.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal conduction and surface-mount compatibility on PCBs with copper pour heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level drive; threshold voltage 3.0–5.5 V enables direct microcontroller interface.
2 - Drain	Main current path anode	Internally connected to exposed metal tab; must be thermally coupled to PCB ground plane for heat transfer.
3 - Source	Main current path cathode / reference node	Serves as power ground return and gate drive reference; low-inductance layout essential for stable switching.
4 - Drain (Tab)	Secondary drain connection	Electrically identical to Pin 2; provides parallel current path and primary thermal interface to PCB.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	49% (9.4/19 nC) - Reduces Miller-induced switching delay and improves controllability in high-speed PWM.
Fully characterized C_oss vs. V_DS	130 pF @ 25 V → 62 pF @ 120 V - Enables precise zero-voltage switching (ZVS) timing in resonant topologies.
Avalanche-rated operation	130 mJ E_AS @ 8.3 A - Eliminates need for external clamping in inductive load switching with known L×di/dt.
Optimized body diode	110 ns trr, 520 nC Q_rr - Minimizes cross-conduction loss and voltage overshoot in synchronous rectifier configurations.
D-Pak thermal performance	R_θJC = 1.75 °C/W - Supports >80 W continuous dissipation with minimal heatsink area on 2 oz copper PCB.

Applications

Telecom 48 V Active Clamp Forward Converter

Industrial DC-DC Isolated Buck-Boost

Use Scenario: Primary-side switch in 48 V input, 12 V output telecom power supply operating at 200–500 kHz with active clamp reset.

IC Role / Device Role / Timing Role: High-side main switch handling 14 A peak current; synchronized with clamp FET to recycle leakage energy.

Use Value: 0.18 Ω R_DS(on) minimizes conduction loss at full load; 130 mJ avalanche rating absorbs clamp circuit transients without snubber.

Use Scenario: Isolated bidirectional DC-DC stage in programmable logic controller (PLC) power management with 24–48 V input range.

IC Role / Device Role / Timing Role: Primary-side power switch in dual-active-bridge topology; operates with 100 ns dead-time control.

Use Value: Low Q_gd (9.4 nC) ensures clean turn-off edge; 110 ns body diode trr prevents shoot-through during polarity reversal.

Server VRM High-Frequency POL Converter

Automotive 48 V Mild Hybrid DC-DC

Use Scenario: Point-of-load (POL) converter stepping down 12 V intermediate bus to 1.2 V CPU core supply at >1 MHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in buck converter; driven complementarily to high-side switch.

Use Value: 1.3 V V_SD and 520 nC Q_rr reduce reverse conduction loss by >30% versus standard MOSFETs in continuous conduction mode.

Use Scenario: 48 V–12 V bi-directional DC-DC converter in mild hybrid vehicle energy recuperation system.

IC Role / Device Role / Timing Role: Main isolation barrier switch subjected to automotive load dump (120 V transient) and regenerative braking spikes.

Use Value: 150 V V_DSS and 175 °C T_J(max) ensure operation across -40 °C to +150 °C ambient; 3.8 V/ns dv/dt rating suppresses false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK15Z	150 V, 14 A, R_DS(on) = 0.22 Ω, Q_g = 24 nC, TO-220 package	Higher R_DS(on) and gate charge; requires heatsink due to higher R_θJA	Preferred where through-hole mounting and higher thermal mass are acceptable; less suitable for ultra-thin telecom modules.
IXTP14N15X2	150 V, 14 A, R_DS(on) = 0.16 Ω, Q_g = 21 nC, TO-220FP package	Lower on-resistance but larger footprint and no exposed drain tab; lower avalanche rating (E_AS = 95 mJ)	Better for low-conduction-loss priority in non-avalanche-critical designs; not recommended for active clamp or unclamped inductive loads.

Compared with STP14NK15Z and IXTP14N15X2, IRFR13N15DTR offers superior thermal efficiency via D-Pak's low R_θJC, tighter gate charge control for high-frequency stability, and verified 130 mJ avalanche capability - making it optimal for compact, high-reliability telecom and industrial SMPS where board space and transient robustness are constrained.

Availability

IRFR13N15DTR is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC converters, and automotive 48 V subsystems requiring stable component supply and long-term production continuity.

Supply support for IRFR13N15DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-voltage, high-current switching solutions engineered for efficiency-critical SMPS, motor drives, and renewable energy inverters - with emphasis on ruggedness, low gate charge, and integrated diode performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR13N15DTR supports 9.8 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within its 175°C maximum junction temperature.

Does this MOSFET require a gate resistor for stable switching?

Yes - a 11 Ω gate resistor is used in the datasheet's switching time test circuit (Fig 10a) to control dv/dt and prevent oscillation. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. Layout-dependent parasitics necessitate empirical tuning per application.

Can the body diode be used for synchronous rectification?

Yes - the intrinsic body diode has characterized V_SD = 1.3 V at 8.3 A and trr = 110 ns, enabling use in synchronous rectification. However, its Q_rr = 520 nC means external Schottky diodes or actively driven FETs may yield lower loss in high-frequency, high-current applications.

Is the IRFR13N15DTR RoHS compliant and halogen-free?

Yes - Infineon confirms IRFR13N15DTR meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The device carries the "HF" marking on its package and is listed in Infineon's official compliance database with material declarations available upon request.

IRFR13N15DTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N15DTR FAQ

1.How can I place an order for IRFR13N15DTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N15DTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N15DTR reliable?

The price and inventory of IRFR13N15DTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N15DTR is usually 5 days.

3.What payment methods are accepted for IRFR13N15DTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N15DTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N15DTR?

IRFR13N15DTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N15DTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N15DTR?

For technical support, including IRFR13N15DTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N15DTR requirements.

6.How does Aetrix verify that IRFR13N15DTR is sourced from the original manufacturer or authorized distributors?

All IRFR13N15DTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N15DTR meets industry standards.

7.What is the process for return or replacement of IRFR13N15DTR?

All IRFR13N15DTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N15DTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N15DTR part is unused and in its original packaging.

Return procedure for IRFR13N15DTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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