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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N15DTRPBF

Name: IRFR13N15DTRPBF
Brand: Infineon Technologies
SKU: IRFR13N15DTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N15DTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N15DTRPBF.pdf

Description:: MOSFET N-CH 150V 14A DPAK

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Product details

Overview

IRFR13N15DTRPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 14A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and active-clamp forward topologies. It features R_DS(on) = 0.18 Ω @ V_GS = 10 V, Q_g = 19–29 nC, and C_oss(eff) = 110 pF, enabling low switching loss in telecom 48V-input power supplies.

For engineers reviewing the IRFR13N15DTRPBF datasheet, IRFR13N15DTRPBF pinout, IRFR13N15DTRPBF application, or IRFR13N15DTRPBF equivalent, key selection criteria include its 150V V_(BR)DSS, 0.18Ω on-resistance at 10V gate drive, 14A continuous drain current at 25°C, avalanche-rated operation (E_AS = 130 mJ), and lead-free D-Pak thermal performance (R_θJC = 1.75°C/W).

Technical Context

This MOSFET employs planar vertical HEXFET architecture with fully characterized dynamic parameters including C_iss = 620 pF, C_oss = 130 pF (at V_DS = 25 V), and C_rss = 38 pF - all measured at 1 MHz. Its gate charge profile (Q_gd/Q_gs = 9.4/5.5 nC typical) supports precise timing control in hard-switched SMPS.

The device integrates a robust body diode with t_rr = 110 ns and Q_rr = 520 nC at dI/dt = 100 A/µs, and is rated for unclamped inductive switching up to I_AR = 8.3 A and E_AS = 130 mJ - critical for reliability in active-clamp and resonant converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	150 V - Withstands 48V-input DC-DC bus transients up to 150V without breakdown
R_DS(on) max	0.18 Ω @ V_GS = 10 V - Enables <1.5W conduction loss at 8.3A in continuous operation
I_D cont @ T_C = 25°C	14 A - Supports high-current primary-side switching in 100–300W telecom SMPS
Q_g typ/max	19/29 nC - Determines gate driver power requirement and switching speed in 100–500 kHz designs
C_oss(eff)	110 pF - Defines output energy loss during turn-on; enables ZVS design below 200 kHz
E_AS	130 mJ - Sustains single-pulse avalanche stress during startup or fault conditions
R_θJC	1.75 °C/W - Allows >70W dissipation with 125°C junction rise over case in PCB-mounted D-Pak

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires 3.0–5.5 V threshold and ≤30 V absolute max rating
D	Drain terminal	High-side switch node; electrically connected to exposed copper pad for heat sinking
S	Source terminal	Reference node for gate drive and current sensing; tied to power ground in low-side configurations

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~45% typical - Reduces Miller-induced switching delay and improves hard-switching robustness
Fully characterized C_oss vs. V_DS	130 pF @ 25 V, 62 pF @ 120 V - Enables accurate snubber and soft-switching design
Body diode t_rr and Q_rr	110 ns / 520 nC - Minimizes reverse recovery loss in synchronous rectification and bidirectional topologies
Avalanche-rated operation	E_AS = 130 mJ, I_AR = 8.3 A - Eliminates need for external clamping in inductive load switching

Applications

Telecom 48V Input DC-DC Converters

Active Clamp Forward Converters

Use Scenario: Primary-side switch in isolated 48V-to-12V/5V telecom power modules delivering 100–250W.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 200–300 kHz with zero-voltage switching assist.

Use Value: 0.18Ω R_DS(on) and 110 pF C_oss(eff) reduce total switching + conduction loss to <2.1W at full load.

Use Scenario: Clamp switch in active clamp forward topology handling 48V input with 150V blocking requirement.

IC Role / Device Role / Timing Role: Synchronous clamp FET recovering energy from transformer leakage inductance.

Use Value: 130 mJ E_AS rating ensures reliable operation during transient overvoltage events at clamp node.

Industrial SMPS Power Supplies

Server VRM High-Side Switches

Use Scenario: Main switch in industrial 24–48V input AC/DC front-end supplies with wide ambient temperature range.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) hard-switched MOSFET with 14A peak current capability.

Use Value: R_θJC = 1.75°C/W and 175°C T_J(max) support stable operation at 85°C ambient with minimal heatsinking.

Use Scenario: High-side switch in multiphase buck converters for CPU/GPU voltage regulation (VRM).

IC Role / Device Role / Timing Role: Fast-turning N-MOSFET driven by dedicated gate controller with 19 nC Q_g.

Use Value: Low Q_gd (9.4 nC) minimizes shoot-through risk and improves phase current balance across phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF15	R_DS(on) = 0.22 Ω, Q_g = 25 nC, TO-220 package	Higher conduction loss; through-hole mounting limits board density	Preferred where thermal mass > PCB space efficiency; not suitable for ultra-thin telecom modules
IXTP14N15P	R_DS(on) = 0.19 Ω, Q_g = 22 nC, TO-220FP package	Same voltage rating but higher R_θJA (65°C/W) reduces power density	Acceptable for lower-frequency (<150 kHz), lower-power (<80W) designs with simpler thermal management

Compared with STP14NF15 and IXTP14N15P, IRFR13N15DTRPBF delivers superior power density via D-Pak thermal resistance (1.75°C/W vs. ≥3.0°C/W), lower Q_g-to-R_DS(on) ratio, and tighter C_oss characterization - making it optimal for compact, high-efficiency 200+ kHz telecom and server SMPS.

Availability

IRFR13N15DTRPBF is available at Aetrix Electronics and suitable for telecom 48V input DC-DC converters, active clamp forward converters, and industrial SMPS requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFR13N15DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and computing applications.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching power conversion in telecom, server, and industrial power supplies.

FAQ

Is IRFR13N15DTRPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix and "P" in the assembly code confirm compliance with RoHS Directive 2011/65/EU. The device uses lead-free terminations and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for standard surface-mount reflow.

What is the maximum recommended gate resistor for 300 kHz operation?

For 300 kHz hard-switching with 10V gate drive, a 11 Ω gate resistor is validated per datasheet Figure 10b (td(off) = 12 ns, tf = 11 ns). Lower values (≤5 Ω) may be used with active gate drivers to reduce switching time, provided dv/dt stress remains within 3.8 V/ns limit.

Can IRFR13N15DTRPBF replace IRFR13N15DPbF in existing designs?

Yes - IRFR13N15DTRPBF is the tape-and-reel packaging variant of IRFR13N15DPbF, sharing identical electrical specifications, thermal characteristics, and D-Pak footprint. Only packaging format (reel vs. tube) and ordering part number differ.

Does the body diode support synchronous rectification in LLC resonant converters?

It can be used in quasi-resonant or asymmetric half-bridge topologies, but its 110 ns t_rr and 520 nC Q_rr exceed typical requirements for high-frequency LLC (>500 kHz). For true synchronous rectification, dedicated low-Q_rr MOSFETs (e.g., <200 nC) are preferred to minimize commutation loss.

IRFR13N15DTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N15DTRPBF FAQ

1.How can I place an order for IRFR13N15DTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N15DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N15DTRPBF reliable?

The price and inventory of IRFR13N15DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N15DTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR13N15DTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N15DTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N15DTRPBF?

IRFR13N15DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N15DTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N15DTRPBF?

For technical support, including IRFR13N15DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N15DTRPBF requirements.

6.How does Aetrix verify that IRFR13N15DTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR13N15DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N15DTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR13N15DTRPBF?

All IRFR13N15DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N15DTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N15DTRPBF part is unused and in its original packaging.

Return procedure for IRFR13N15DTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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