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Infineon Technologies IRFR13N20DCPBF

Part No.:
IRFR13N20DCPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR13N20DCPBF.pdf
Description:
MOSFET N-CH 200V 13A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,020

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Product details

Overview

IRFR13N20DCPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 13 A N-channel enhancement-mode MOSFET in DPAK (TO-252) package, optimized for switch-mode power supply (SMPS) primary-side switching with RDS(on) = 0.22 Ω at VGS = 10 V and Qg = 24 nC. It operates in hard-switched flyback and forward converters up to 500 kHz.

For engineers reviewing the IRFR13N20DCPBF datasheet, IRFR13N20DCPBF pinout, IRFR13N20DCPBF application, or IRFR13N20DCPBF equivalent, key selection criteria include breakdown voltage margin, gate charge for ZVS/ZCS compatibility, thermal resistance (RθJA = 62 °C/W), SOA compliance at 100 µs pulse width, and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and field oxide termination to sustain 200 V blocking while maintaining low conduction loss. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V or 12 V gate drivers.

The device features fully avalanche-rated operation (EAS = 125 mJ), specified for repetitive unclamped inductive switching, and includes integrated body diode with trr = 60 ns and Qrr = 38 nC - critical for synchronous rectification and snubberless designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200 V - supports 170 V AC input rectified to ~240 V DC with 20% derating margin for surge transients
ID (continuous)13 A @ TC = 25 °C - enables 150–200 W SMPS output with forced-air cooling
RDS(on)0.22 Ω max @ VGS = 10 V - limits conduction loss to ≤3.1 W at 13 A, reducing heatsink requirements
Qg24 nC - compatible with common PWM controllers (e.g., UC384x) driving ≤1 W gate driver stage
EAS125 mJ - withstands single-pulse inductive energy without failure during startup or overload
RθJA62 °C/W - requires minimum 250 mm² copper pour on DPAK drain pad for ≤100 °C junction rise at full load

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-drain tab design with exposed drain pad for thermal conduction to PCB.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Power return path for load currentInternally connected to substrate; must be routed to low-impedance ground plane to minimize switching noise coupling
Pin 2 (Gate)Control terminal for channel conductionHigh-impedance input requiring <100 pF layout capacitance; gate resistor value directly sets dV/dt and EMI profile
Pin 3 (Drain)Main high-side power nodeExposed metal tab - electrically and thermally tied to drain; must be soldered to ≥250 mm² copper area for thermal management

Key Features

FeatureDesign Value
Fully avalanche-ratedGuarantees robustness against inductive kickback in offline SMPS without external clamping
Lead-free and RoHS-compliantMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow profiles
Fast body diode recoverytrr = 60 ns enables use in quasi-resonant topologies without adding external freewheeling diode
Low gate chargeReduces driver power dissipation and allows higher-frequency operation with minimal gate drive loss

Applications

AC-DC AdapterIndustrial Power Supply

Use Scenario: 65 W laptop adapter operating from universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in discontinuous conduction mode (DCM) flyback converter.

Use Value: 200 V rating accommodates peak line voltage + surge; 0.22 Ω RDS(on) keeps conduction loss below 2.5 W at full load.

Use Scenario: 120 W programmable bench power supply with overvoltage/overcurrent protection.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter running at 250 kHz.

Use Value: Fully rated avalanche capability ensures reliability during fault conditions; 24 nC Qg supports precise gate timing control.

LED DriverTelecom DC-DC Module

Use Scenario: Constant-current LED driver for street lighting (30–50 V output, 1.5 A).

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology with analog dimming interface.

Use Value: Low RDS(on) minimizes thermal stress under continuous 1.5 A load; MSL1 rating supports automated assembly.

Use Scenario: 48 V to 12 V intermediate bus converter in telecom shelf system.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge configuration.

Use Value: 125 mJ EAS withstands transformer leakage energy during soft-start; fast body diode reduces circulating current loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SMPS switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP14NF20RDS(on) = 0.24 Ω, Qg = 26 nC, same VDSS/IDSlightly higher conduction loss; identical thermal footprintAcceptable where gate drive margin exists and 0.02 Ω RDS(on) increase is tolerable
IXTP12N20D2RDS(on) = 0.26 Ω, Qg = 22 nC, enhanced body diode softness (trr = 45 ns)Better EMI performance in high-dV/dt environments due to softer diode recoveryPreferred when minimizing switching noise is prioritized over minimal conduction loss

Compared with STP14NF20 and IXTP12N20D2, IRFR13N20DCPBF offers the lowest RDS(on) among the three, delivering highest efficiency at medium loads, while maintaining balanced gate charge and proven avalanche ruggedness in production-grade SMPS designs.

Availability

IRFR13N20DCPBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial power supplies, and LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFR13N20DCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and consumer applications.

This device belongs to the HEXFET® family, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in cost-sensitive, high-volume power supply designs.

FAQ

What is the maximum safe operating temperature for IRFR13N20DCPBF?

The absolute maximum junction temperature is 175 °C. For reliable long-term operation, keep TJ ≤ 150 °C under worst-case ambient and power dissipation conditions. This requires proper PCB copper area (≥250 mm² drain pad), airflow ≥1 m/s, and derating ID to 9 A at TC = 100 °C per datasheet SOA curves.

Does IRFR13N20DCPBF support gate drive from a 5 V microcontroller?

No - its VGS(th) min is 2.0 V but guaranteed RDS(on) requires VGS ≥ 10 V. Driving from 5 V results in partial enhancement and excessive conduction loss (>10× rated). A dedicated gate driver (e.g., TC4420) or level-shifting circuit is mandatory for full enhancement.

Is the body diode suitable for synchronous rectification?

It is not recommended for synchronous rectification due to relatively high Qrr (38 nC) and reverse recovery time (60 ns), which cause significant switching loss and shoot-through risk. Dedicated low-Qrr Schottky or GaN FETs are preferred for SR applications above 100 kHz.

How does the "P" suffix in IRFR13N20DCPBF affect assembly?

The "P" denotes lead-free (Pb-free) construction per RoHS Directive 2011/65/EU. It mandates SnAgCu (SAC305) solder compatibility and requires adherence to J-STD-020 MSL1 reflow profile (peak 260 °C, 10 s), with no special pre-bake needed before assembly.

IRFR13N20DCPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
830 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR13N20DCPBF FAQ

1.How can I place an order for IRFR13N20DCPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DCPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DCPBF reliable?

The price and inventory of IRFR13N20DCPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DCPBF is usually 5 days.

3.What payment methods are accepted for IRFR13N20DCPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DCPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DCPBF?

IRFR13N20DCPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DCPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DCPBF?

For technical support, including IRFR13N20DCPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DCPBF requirements.

6.How does Aetrix verify that IRFR13N20DCPBF is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DCPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DCPBF meets industry standards.

7.What is the process for return or replacement of IRFR13N20DCPBF?

All IRFR13N20DCPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DCPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DCPBF part is unused and in its original packaging.

Return procedure for IRFR13N20DCPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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