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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N20DCTRLP

Name: IRFR13N20DCTRLP
Brand: Infineon Technologies
SKU: IRFR13N20DCTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N20DCTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N20DCTRLP.pdf

Description:: MOSFET N-CH 200V 13A DPAK

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Product details

Overview

IRFR13N20DCTRLP from Infineon Technologies is a 200 V, 13 A N-channel D-Pak (TO-252AA) power MOSFET optimized for high-frequency DC-DC converters in telecom 48 V input forward topologies. It features 0.235 Ω R_DS(on) at V_GS = 10 V, 25 nC typical total gate charge, and fully characterized effective output capacitance (C_oss,eff = 59 pF) to simplify snubberless design.

For engineers reviewing the IRFR13N20DCTRLP datasheet, IRFR13N20DCTRLP pinout, IRFR13N20DCTRLP application, or IRFR13N20DCTRLP equivalent, key selection criteria include avalanche energy rating (130 mJ), diode reverse recovery performance (Q_rr = 750–1120 nC), and thermal resistance (R_θJC = 1.4 °C/W) for high-power-density SMPS layouts.

Technical Context

This HEXFET® device uses planar vertical DMOS technology with an integrated body diode rated for 7.8 A continuous source current and 140–210 ns reverse recovery time. Its low Q_gd/Q_g ratio (12/25 nC typ.) enables fast, controllable switching under hard-switching conditions.

The MOSFET supports unclamped inductive switching with guaranteed single-pulse avalanche capability up to 130 mJ at I_AS = 7.8 A, and its C_oss is characterized across V_DS (1.0 V to 160 V) to support accurate loss modeling in resonant and quasi-resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 48 V telecom bus transients up to 160 V without breakdown
R_DS(on) max	0.235 Ω @ V_GS = 10 V - Enables <1.9 W conduction loss at 9.2 A (T_C = 100 °C)
Q_g typ.	25 nC - Reduces gate drive power and allows use of smaller gate drivers in 300–500 kHz designs
C_oss,eff	59 pF - Supports accurate calculation of turn-off energy and snubber sizing in ZVS/ZCS topologies
E_AS	130 mJ - Sustains single-pulse inductive energy during startup or overload without failure
R_θJC	1.4 °C/W - Allows 78 W power dissipation at ΔT = 110 °C (T_J = 175 °C, T_C = 65 °C)

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; surface-mount, single-ended layout compatible with automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level drive; threshold voltage 3.0–5.5 V ensures robust noise immunity
2 - Drain	Main current path (high-side)	Connected to PCB copper pour for heat sinking; pins 2 and 4 are internally tied to same drain node
3 - Source	Reference node / return path	Serves as local ground reference for gate drive; low-inductance routing critical for dv/dt stability
4 - Drain	Secondary drain terminal	Parallel drain connection to pin 2; improves current sharing and reduces package inductance

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.48 (12/25 nC) - Minimizes Miller-induced switching delay and improves dV/dt immunity
Fully characterized C_oss	57–990 pF range over V_DS = 1.0–160 V - Enables precise E_off prediction in soft-switching circuits
Avalanche-rated	130 mJ single-pulse E_AS - Eliminates need for external clamping in flyback or active clamp forward designs
Optimized body diode	Q_rr = 750–1120 nC, t_rr = 140–210 ns - Reduces cross-conduction loss in synchronous rectification

Applications

Telecom Forward Converter

Industrial DC-DC Module

Use Scenario: 48 V input, 12 V/20 A isolated forward converter operating at 350 kHz in base station power supply.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full load current with zero-voltage switching assist.

Use Value: Low C_oss,eff and controlled Q_gd reduce turn-off loss by 22% vs. legacy 200 V MOSFETs at same frequency.

Use Scenario: 24–72 V wide-input industrial DC-DC module delivering 5 V/10 A to PLC I/O cards.

IC Role / Device Role / Timing Role: Main switching element in asymmetric half-bridge topology with fixed 500 kHz frequency.

Use Value: 1.4 °C/W R_θJC enables 100% load operation at 70 °C ambient without forced air cooling.

Server VRM High-Side Switch

Medical Power Supply

Use Scenario: 12 V input, 1.8 V/120 A multiphase buck converter in AI accelerator server VRM.

IC Role / Device Role / Timing Role: High-side FET in one phase leg; driven by dedicated gate driver with 2 A peak current.

Use Value: 25 nC Q_g allows full switching within 25 ns gate drive rise time, minimizing dead-time loss.

Use Scenario: 230 VAC/48 VDC input, 5 V/3 A isolated medical-grade power supply meeting IEC 60601-1 creepage requirements.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback with valley-switching control.

Use Value: Guaranteed 130 mJ E_AS ensures reliable operation during output short-circuit fault recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK20ZFP	R_DS(on) = 0.22 Ω, Q_g = 28 nC, no C_oss,eff spec	Higher gate charge increases driver loss; lacks published avalanche energy curve	Preferable only if lower R_DS(on) outweighs higher switching loss in <200 kHz designs
IXTP13N20D	R_DS(on) = 0.25 Ω, Q_g = 22 nC, TO-220 package	Larger footprint and higher R_θJA (62 °C/W) limits power density	Preferred for prototyping or low-volume thermal testing where through-hole mounting is acceptable

Compared with STP14NK20ZFP and IXTP13N20D, IRFR13N20DCTRLP delivers superior high-frequency efficiency via lower Q_gd, validated C_oss,eff, and guaranteed avalanche ruggedness-critical for production telecom and industrial SMPS where reliability and thermal margin are non-negotiable.

Availability

IRFR13N20DCTRLP is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, and medical power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRFR13N20DCTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFR13N20DCTRLP supports 9.2 A continuous drain current at T_C = 100 °C with V_GS = 10 V, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within the 175 °C maximum junction temperature.

Does this MOSFET have avalanche capability, and is it tested per JEDEC standards?

Yes, it is fully specified for unclamped inductive switching with E_AS = 130 mJ at I_AS = 7.8 A and T_J = 25 °C. The test circuit and waveforms comply with JEDEC JESD24-11, and data is provided in Figures 12a–12c of the official datasheet.

Can the body diode be used for synchronous rectification in a flyback converter?

Yes-the body diode has characterized Q_rr (750–1120 nC) and t_rr (140–210 ns) at I_F = 7.8 A, enabling predictable timing for synchronous gate drive. However, its V_SD = 1.3 V at 7.8 A means conduction loss exceeds that of a Schottky diode below ~100 kHz.

What is the recommended PCB layout for thermal performance?

Maximize copper area connected to pins 2 and 4 (drain) using ≥2 oz copper and multiple thermal vias to inner ground planes. Keep source (pin 3) trace short and low-inductance; gate (pin 1) routing must avoid coupling to drain traces. Minimum 10 mm² exposed drain pad area is required for rated R_θJC.

IRFR13N20DCTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N20DCTRLP FAQ

1.How can I place an order for IRFR13N20DCTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DCTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DCTRLP reliable?

The price and inventory of IRFR13N20DCTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DCTRLP is usually 5 days.

3.What payment methods are accepted for IRFR13N20DCTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DCTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DCTRLP?

IRFR13N20DCTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DCTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DCTRLP?

For technical support, including IRFR13N20DCTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DCTRLP requirements.

6.How does Aetrix verify that IRFR13N20DCTRLP is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DCTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DCTRLP meets industry standards.

7.What is the process for return or replacement of IRFR13N20DCTRLP?

All IRFR13N20DCTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DCTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DCTRLP part is unused and in its original packaging.

Return procedure for IRFR13N20DCTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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