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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N20DTR

Name: IRFR13N20DTR
Brand: Infineon Technologies
SKU: IRFR13N20DTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N20DTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N20DTR.pdf

Description:: MOSFET N-CH 200V 13A DPAK

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Product details

Overview

IRFR13N20DTR from Infineon Technologies is a 200 V, 13 A N-channel enhancement-mode D-Pak (TO-252AA) power MOSFET optimized for high-frequency DC–DC converters in telecom 48 V input forward topologies. It features 0.235 Ω R_DS(on) at V_GS = 10 V, 25 nC typical total gate charge, and fully characterized effective output capacitance (C_oss,eff = 59 pF) to simplify snubberless design.

For engineers reviewing the IRFR13N20DTR datasheet, IRFR13N20DTR pinout, IRFR13N20DTR application, or IRFR13N20DTR equivalent, key selection criteria include avalanche energy rating (130 mJ), peak diode recovery dv/dt (2.2 V/ns), low Q_gd/Q_g ratio for hard-switching efficiency, and thermal resistance (R_θJC = 1.4 °C/W) for compact heatsink integration.

Technical Context

This HEXFET® device employs planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to achieve low R_DS(on) while maintaining robust 200 V breakdown voltage (V_(BR)DSS ≥ 200 V). Its low Q_gd (12–18 nC) and Q_gs/Q_gd ratio support fast, controllable turn-off in synchronous rectification and active clamp circuits.

The body diode is fully specified with t_rr = 140–210 ns and Q_rr = 750–1120 nC at dI/dt = 100 A/µs, enabling reliable operation in discontinuous conduction mode (DCM) flyback and resonant LLC secondary-side switching without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 48 V telecom bus transients up to 160 V DC plus 40 V overshoot without avalanche conduction.
R_DS(on) max	0.235 Ω @ V_GS = 10 V, I_D = 8 A - Enables ≤1.5 W conduction loss at 7.8 A continuous current in 100 °C ambient PCB mount.
Q_g typ	25 nC - Requires ≤0.25 µC gate drive energy per switch cycle at 100 kHz, compatible with standard 1 A peak gate drivers.
C_oss,eff	59 pF - Reduces capacitive turn-on loss and simplifies zero-voltage switching (ZVS) design in phase-shifted full-bridge topologies.
E_AS	130 mJ - Supports unclamped inductive switching with L × I²/2 ≤ 130 mJ, eliminating need for external clamping in flyback snubbers.
R_θJC	1.4 °C/W - Allows direct copper pour thermal path to heatsink, sustaining 110 W P_D at T_C = 25 °C without forced air.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with drain connected to pins 2 and 4 (common source-drain thermal path).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Controls channel conduction; requires 10 V drive for full R_DS(on) specification; ±30 V absolute max rating.
2 & 4	Drain	High-side switching node; electrically and thermally tied to exposed copper pad; handles full load current and voltage stress.
3	Source	Power return path and gate reference; connects to PCB ground plane; critical for minimizing common-source inductance in high-dI/dt layouts.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~48% (12/25 nC) - Improves controllability during Miller plateau, reducing risk of shoot-through in half-bridge configurations.
Fully characterized C_oss vs. V_DS	57 pF @ 160 V, 990 pF @ 1 V - Enables accurate soft-switching timing prediction across full operating voltage range.
Specified avalanche capability	I_AR = 7.8 A, E_AR = 11 mJ - Permits repetitive inductive turn-off without derating in motor gate drivers or solenoid controls.
Body diode t_rr & Q_rr	t_rr = 140 ns, Q_rr = 750 nC - Enables use as synchronous rectifier in 300 kHz+ flyback converters without reverse recovery spikes.

Applications

Telecom Forward Converter

Industrial SMPS

Use Scenario: 48 V input, 12 V/10 A output forward converter in base station power supply.

IC Role / Device Role / Timing Role: Primary-side main switch operating at 200–500 kHz with active clamp reset.

Use Value: Low Q_gd and C_oss,eff reduce switching losses by >18% versus legacy 0.35 Ω MOSFETs at 300 kHz, improving full-load efficiency to ≥92%.

Use Scenario: 36–75 V input industrial DC–DC module powering PLC I/O backplanes.

IC Role / Device Role / Timing Role: High-side switch in isolated half-bridge driving gate transformer for auxiliary bias winding.

Use Value: 200 V V_DSS headroom accommodates 60 V nominal bus + 40 V surge, eliminating need for overvoltage crowbar protection.

Server VRM High-Side

LED Driver Secondary Switch

Use Scenario: 12 V input, 1.8 V/120 A multiphase buck converter in AI accelerator card VRM.

IC Role / Device Role / Timing Role: High-side FET in 1 MHz synchronous buck stage with integrated driver.

Use Value: R_θJC = 1.4 °C/W enables direct thermal coupling to VRM heatsink, limiting junction rise to <15 °C at 12 A per phase.

Use Scenario: Secondary-side synchronous rectifier in 36 W constant-current LED driver with LLC topology.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode in resonant tank output stage.

Use Value: Body diode Q_rr = 750 nC allows clean ZVS turn-on at 500 kHz, reducing diode conduction loss by 65% versus 40 V/5 A Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK20Z	R_DS(on) = 0.22 Ω, Q_g = 28 nC, C_oss,eff not specified	Lacks published C_oss,eff and avalanche energy curves; lower dv/dt rating (1.8 V/ns)	Preferable only when gate drive strength exceeds 1.2 A peak and layout minimizes parasitic ringing.
IXTP13N20D	R_DS(on) = 0.24 Ω, Q_g = 22 nC, E_AS = 110 mJ	Lower total gate charge but reduced avalanche margin; TO-220 package increases thermal resistance (R_θJC = 2.5 °C/W)	Preferred for prototyping with through-hole heatsinks; avoid in space-constrained SMT telecom modules.

Compared with STP14NK20Z and IXTP13N20D, IRFR13N20DTR offers superior C_oss,eff characterization and higher dv/dt immunity-critical for stable operation in high-noise telecom environments-while maintaining competitive R_DS(on) and thermal performance in D-Pak footprint.

Availability

IRFR13N20DTR is available at Aetrix Electronics and suitable for telecom forward converters, industrial SMPS, server VRMs, and LED driver secondary switches requiring stable component supply and long-term production continuity.

Supply support for IRFR13N20DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in telecom, server, and industrial power supplies where low gate charge and controlled avalanche behavior are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR13N20DTR supports 9.2 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be validated against actual PCB copper area and airflow conditions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 6.8 Ω) is recommended to dampen ringing during switching transitions and limit peak gate current. The datasheet's switching time test circuit specifies R_G = 6.8 Ω, and omitting it may cause oscillation or gate oxide overstress due to PCB trace inductance.

Can IRFR13N20DTR replace IRFR13N20D in existing designs?

Yes-IRFR13N20DTR is the tape-and-reel packaging variant of IRFR13N20D, sharing identical electrical, thermal, and mechanical specifications. The "TR" suffix denotes reel packaging (2000 pcs/reel); no layout or schematic changes are required for drop-in replacement.

Is the body diode suitable for reverse recovery in high-frequency operation?

Yes-the body diode is fully characterized with t_rr = 140–210 ns and Q_rr = 750–1120 nC at dI/dt = 100 A/µs, making it suitable for synchronous rectification up to 500 kHz in flyback and LLC converters when driven with appropriate dead-time control.

IRFR13N20DTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N20DTR FAQ

1.How can I place an order for IRFR13N20DTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DTR reliable?

The price and inventory of IRFR13N20DTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DTR is usually 5 days.

3.What payment methods are accepted for IRFR13N20DTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DTR?

IRFR13N20DTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DTR?

For technical support, including IRFR13N20DTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DTR requirements.

6.How does Aetrix verify that IRFR13N20DTR is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DTR meets industry standards.

7.What is the process for return or replacement of IRFR13N20DTR?

All IRFR13N20DTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DTR part is unused and in its original packaging.

Return procedure for IRFR13N20DTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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