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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N20DTRL

Name: IRFR13N20DTRL
Brand: Infineon Technologies
SKU: IRFR13N20DTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N20DTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N20DTRL.pdf

Description:: MOSFET N-CH 200V 13A DPAK

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Product details

Overview

IRFR13N20DTRL from Infineon Technologies is a 200V, 13A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It features 0.235Ω R_DS(on) at V_GS = 10V, 25nC typical total gate charge, and fully characterized effective output capacitance (C_oss,eff = 59pF), enabling efficient switching in telecom 48V forward converters.

For engineers reviewing the IRFR13N20DTRL datasheet, IRFR13N20DTRL pinout, IRFR13N20DTRL application, or IRFR13N20DTRL equivalent, key selection criteria include avalanche energy rating (130mJ single-pulse), diode reverse recovery charge (750–1120nC), gate threshold voltage range (3.0–5.5V), and thermal resistance (R_θJC = 1.4°C/W).

Technical Context

This HEXFET® device uses planar vertical DMOS technology with optimized charge distribution to minimize Q_gd/Q_gs ratio (12nC/7.3nC typical), reducing Miller-induced switching delays. Its fully characterized C_oss across 1.0V–160V (57pF–990pF) and C_oss,eff = 59pF support accurate snubberless design in hard-switched topologies.

The integrated body diode exhibits 140–210ns reverse recovery time and 1.3V forward drop at 7.8A/25°C, enabling synchronous rectification in non-isolated buck stages. Avalanche ruggedness is validated to 7.8A I_AR and 130mJ E_AS, supporting unclamped inductive turn-off in SMPS primary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200V - Withstands 200V drain-source blocking voltage before avalanche onset
R_DS(on) max	0.235Ω @ V_GS = 10V, I_D = 8A - Enables <1.8W conduction loss at 13A continuous current
Q_g typ	25nC - Determines gate drive power requirement and switching speed in 100kHz–500kHz designs
C_oss,eff	59pF - Effective output capacitance used for zero-voltage switching (ZVS) timing calculations
E_AS	130mJ - Single-pulse avalanche energy rating supports robust operation during transient overloads
R_θJC	1.4°C/W - Junction-to-case thermal resistance enables 110W power dissipation with adequate heatsinking
trr	140–210ns - Body diode reverse recovery time impacts cross-conduction losses in synchronous rectifiers

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance; 3-pin configuration with drain connected to tab for low-inductance high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10V logic-level drive; 3.0–5.5V V_GS(th) ensures reliable turn-on with standard PWM controllers
2 (Drain)	High-side power terminal	Connected to PCB copper pour via exposed tab; carries full load current and dissipates heat directly to board
3 (Source)	Reference node	Serves as return path for gate drive and load current; defines local ground reference for driver IC placement
4 (Drain – Tab)	Thermal & power return	Electrically tied to Pin 2; requires solder mask opening and thermal vias for optimal R_θJA reduction

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	12nC/25nC typical - Reduces Miller plateau duration, improving controllability in high-dv/dt environments
Fully characterized C_oss vs. V_DS	57pF @ 160V, 990pF @ 1.0V - Enables precise resonant timing in LLC and ZVS flyback designs
Avalanche-rated construction	130mJ E_AS, 7.8A I_AR - Eliminates need for external clamping in inductive switching applications
Optimized body diode	1.3V V_SD @ 7.8A, 140ns trr - Supports moderate-frequency synchronous rectification without external Schottky
Thermally enhanced D-Pak	R_θJC = 1.4°C/W - Allows direct mounting to 2oz copper planes for >90W continuous operation

Applications

Telecom 48V Forward Converter

Industrial DC-DC Brick

Use Scenario: Primary-side switch in isolated 48V input forward converter delivering 12V/20A output.

IC Role / Device Role / Timing Role: High-side switching element operating at 250kHz with hard-switched PWM control.

Use Value: Low Q_g (25nC) and C_oss,eff (59pF) reduce total switching loss to <1.2W, enabling >94% efficiency at full load.

Use Scenario: Main switch in 24–72V input industrial DC-DC module targeting 5V/10A output.

IC Role / Device Role / Timing Role: Synchronous rectifier driver in secondary-side active clamp topology.

Use Value: Body diode trr (140ns) and low V_SD (1.3V) cut conduction loss by 35% versus discrete Schottky solution.

Server VRM High-Side Switch

LED Driver Flyback Primary

Use Scenario: High-side FET in multiphase buck converter supplying CPU core voltage from 12V rail.

IC Role / Device Role / Timing Role: Fast-turning switch synchronized to 1MHz PWM with tight dead-time control.

Use Value: Tight V_GS(th) tolerance (3.0–5.5V) ensures consistent turn-on timing across temperature and process variation.

Use Scenario: Primary switch in isolated flyback LED driver for street lighting (120–370V AC input).

IC Role / Device Role / Timing Role: Energy-transfer switch operating in discontinuous conduction mode (DCM) at 65kHz.

Use Value: 200V V_DSS and 130mJ E_AS withstand line surges and transformer leakage spikes without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK20Z	200V, 14A, R_DS(on) = 0.22Ω, Q_g = 28nC, TO-220 package	Through-hole mounting; higher R_θJA (62°C/W) limits high-power density use	Preferred for prototyping or low-volume through-hole boards where thermal mass compensates for lower integration
IXTP13N20D	200V, 13A, R_DS(on) = 0.24Ω, Q_g = 22nC, TO-220AB package	No exposed drain tab; lacks C_oss,eff characterization and avalanche data sheet detail	Selected when gate charge minimization is prioritized over avalanche margin and thermal performance

Compared with STP14NK20Z and IXTP13N20D, IRFR13N20DTRL offers superior thermal management via D-Pak's low R_θJC, verified C_oss,eff for ZVS design, and documented 130mJ avalanche capability-critical for production-grade telecom and industrial SMPS.

Availability

IRFR13N20DTRL is available at Aetrix Electronics and suitable for telecom 48V forward converters, industrial DC-DC bricks, and server VRM high-side switches requiring stable component supply and long-term lifecycle support.

Supply support for IRFR13N20DTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low switching loss and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR13N20DTRL supports 9.2A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual PCB layout and airflow conditions.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 6.8Ω per datasheet test condition) is required to dampen ringing, control dv/dt during turn-on, and limit peak gate current. Omitting it risks shoot-through in half-bridge configurations and can exceed I_GSS limits under fast edge rates.

Can IRFR13N20DTRL replace IRFU13N20D in existing designs?

Yes-both share identical electrical specifications and D-Pak footprint, but IRFR13N20DTRL uses tape-and-reel packaging for automated assembly, while IRFU13N20D is in I-Pak. Mechanical compatibility is confirmed; no layout or thermal redesign is needed for substitution.

What is the significance of C_oss,eff = 59pF in practical design?

C_oss,eff represents the energy-equivalent output capacitance across the full 0–160V V_DS swing, used to calculate turn-off energy loss (E = ½·C_oss,eff·V_DS²) and ZVS transition timing. It replaces generic C_oss values for accurate loss modeling in resonant converters.

IRFR13N20DTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N20DTRL FAQ

1.How can I place an order for IRFR13N20DTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DTRL reliable?

The price and inventory of IRFR13N20DTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DTRL is usually 5 days.

3.What payment methods are accepted for IRFR13N20DTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DTRL?

IRFR13N20DTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DTRL?

For technical support, including IRFR13N20DTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DTRL requirements.

6.How does Aetrix verify that IRFR13N20DTRL is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DTRL meets industry standards.

7.What is the process for return or replacement of IRFR13N20DTRL?

All IRFR13N20DTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DTRL part is unused and in its original packaging.

Return procedure for IRFR13N20DTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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