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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N20DTRPBF

Name: IRFR13N20DTRPBF
Brand: Infineon Technologies
SKU: IRFR13N20DTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N20DTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N20DTRPBF.pdf

Description:: MOSFET N-CH 200V 13A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR13N20DTRPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 13 A, N-channel enhancement-mode MOSFET in DPAK package with 0.18 Ω R_DS(on) at V_GS = 10 V, optimized for high-efficiency switch-mode power supplies and DC-DC converters in industrial and telecom power systems.

For engineers reviewing the IRFR13N20DTRPBF datasheet, IRFR13N20DTRPBF pinout, IRFR13N20DTRPBF application, or IRFR13N20DTRPBF equivalent, key selection criteria include R_DS(on), Q_g, thermal resistance (R_θJA), avalanche ruggedness rating, and lead-free RoHS-compliant packaging for surface-mount assembly.

Technical Context

This MOSFET uses planar stripe silicon technology with optimized gate oxide thickness and channel doping to achieve low conduction loss while maintaining robust switching performance. It features fully rated avalanche energy (E_AS = 125 mJ) and specified unclamped inductive switching (UIS) capability per JEDEC JESD24-11.

The device supports standard gate drive voltages (10 V), exhibits fast turn-on/turn-off times (t_on = 27 ns, t_off = 42 ns), and maintains stable threshold voltage (V_GS(th) = 2.0–4.0 V) across temperature range –55 °C to +175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum drain-source blocking voltage for 200 V bus applications
I_D (continuous)	13 A @ T_C = 25 °C - Continuous current handling at case temperature, derates to 8.2 A at 100 °C
R_DS(on)	0.18 Ω @ V_GS = 10 V - Low conduction loss enabling <1.5 W dissipation at 13 A
Q_g	29 nC - Gate charge value directly impacting driver sizing and switching loss in hard-switched topologies
R_θJA	62 °C/W - Junction-to-ambient thermal resistance on FR-4 PCB with 1-in² copper pad, critical for thermal design margin
E_AS	125 mJ - Rated single-pulse avalanche energy, supporting reliable operation under transient overvoltage conditions

Pinout & Package

IRFR13N20DTRPBF is housed in a surface-mount DPAK (TO-252AA) package with three terminals: Drain (pins 1 & 2), Source (pin 3), and Gate (pin 4). The exposed drain pad (pins 1 & 2) provides primary thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (pins 1 & 2)	Main current-carrying terminal	Connected to high-side switching node; electrically and thermally tied to large copper pour for heat dissipation
Source (pin 3)	Reference node for gate drive and current sensing	Provides return path for load current; used as ground reference for gate driver ICs in low-side configurations
Gate (pin 4)	Control input	Receives logic-level or PWM signal; requires <29 nC charge for full enhancement, compatible with standard 5–15 V drivers

Key Features

Feature	Design Value
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU; "P" suffix confirms Pb-free plating and solderability per J-STD-020
100% UIS tested	Each unit validated for unclamped inductive switching reliability-no screening failures in production lot testing
Enhanced body diode dV/dt immunity	Rated for >4.5 V/ns - prevents spurious turn-on during high-speed switching in bridge configurations
Low gate charge (Q_g)	29 nC enables use of smaller, lower-cost gate drivers without sacrificing switching speed or efficiency

Applications

Server PSU

Industrial DC-DC Converter

Use Scenario: Primary-side synchronous rectification in 48 V input, 12 V output server power supply units.

IC Role / Device Role / Timing Role: High-side switching element in active clamp forward or LLC resonant topology.

Use Value: 0.18 Ω R_DS(on) reduces conduction loss by ~22% vs. comparable 200 V MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Isolated 24 V to 5 V/3.3 V DC-DC converter in programmable logic controller (PLC) backplane power.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward converter with center-tapped transformer.

Use Value: Fully rated avalanche capability ensures survival during output short-circuit events without external clamping.

Telecom Rectifier Module

Motor Drive Inverter Stage

Use Scenario: Hot-swap OR-ing FET in redundant 54 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Low-side OR-ing switch controlling power path between parallel rectifiers.

Use Value: 13 A continuous rating and 62 °C/W R_θJA allow operation at 70 °C ambient without heatsink, reducing BOM cost.

Use Scenario: Half-bridge high-side switch in 24 V brushless DC motor drive for HVAC actuators.

IC Role / Device Role / Timing Role: Fast-switching power stage element controlled by isolated gate driver.

Use Value: 27 ns t_on/42 ns t_off enables 100 kHz PWM operation with minimal dead-time penalty and reduced EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK20ZFP	R_DS(on) = 0.22 Ω, Q_g = 32 nC, TO-220FP package	Through-hole mounting; higher R_θJA (65 °C/W) limits power density in compact SMT designs	Preferred where mechanical robustness and serviceability outweigh SMT space constraints
IXTP13N20P	R_DS(on) = 0.20 Ω, Q_g = 24 nC, TO-220 package, no RoHS "P" marking	Larger footprint and higher thermal resistance (70 °C/W); not lead-free certified	Acceptable only in legacy non-RoHS industrial programs with existing TO-220 layout

Compared with STP14NK20ZFP and IXTP13N20P, IRFR13N20DTRPBF delivers superior power density via DPAK packaging, lower conduction loss, and guaranteed lead-free compliance-making it optimal for new SMT-based telecom and server power designs requiring regulatory alignment and thermal efficiency.

Availability

IRFR13N20DTRPBF is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for IRFR13N20DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and computing markets.

This device belongs to the StrongIRFET™ family, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in demanding 200 V-class applications.

FAQ

What is the maximum junction temperature rating for IRFR13N20DTRPBF?

The absolute maximum junction temperature is +175 °C, verified per JEDEC JESD22-A108. Operation up to this limit is permitted under specified thermal conditions, including proper PCB copper area and airflow. Derating curves in the datasheet define safe operating area (SOA) boundaries above 25 °C ambient.

Does IRFR13N20DTRPBF support logic-level gate drive?

No-it is not a logic-level MOSFET. Its threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) of 0.18 Ω. Driving with 5 V may result in R_DS(on) > 0.4 Ω and excessive conduction loss.

Is the body diode suitable for freewheeling in synchronous rectification?

Yes-the body diode is characterized for reverse recovery time (t_rr = 65 ns) and peak reverse recovery current (I_RRM = 11 A), making it usable in synchronous rectification. However, external Schottky diodes are recommended for highest efficiency in high-frequency (>200 kHz) designs.

How is the "P" in the part number interpreted?

The "P" suffix denotes lead-free (Pb-free) construction per EU RoHS Directive 2011/65/EU. It indicates matte tin plating on leads and Pb-free die attach material, confirmed by manufacturer's material declaration and J-STD-020 moisture sensitivity level (MSL) 1 rating.

IRFR13N20DTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N20DTRPBF FAQ

1.How can I place an order for IRFR13N20DTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DTRPBF reliable?

The price and inventory of IRFR13N20DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR13N20DTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DTRPBF?

IRFR13N20DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DTRPBF?

For technical support, including IRFR13N20DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DTRPBF requirements.

6.How does Aetrix verify that IRFR13N20DTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR13N20DTRPBF?

All IRFR13N20DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DTRPBF part is unused and in its original packaging.

Return procedure for IRFR13N20DTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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