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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N20DTRR

Name: IRFR13N20DTRR
Brand: Infineon Technologies
SKU: IRFR13N20DTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N20DTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N20DTRR.pdf

Description:: MOSFET N-CH 200V 13A DPAK

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Product details

Overview

IRFR13N20DTRR from Infineon Technologies is a 200 V, 13 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters and telecom forward topologies. It delivers R_DS(on) = 0.235 Ω at V_GS = 10 V, Q_g = 25 nC typical, and C_oss,eff = 59 pF, enabling low switching loss in 48 V input SMPS designs.

For engineers reviewing the IRFR13N20DTRR datasheet, IRFR13N20DTRR pinout, IRFR13N20DTRR application, or IRFR13N20DTRR equivalent, key selection criteria include avalanche energy rating (E_AS = 130 mJ), diode reverse recovery (Q_rr = 750–1120 nC), gate charge profile, thermal resistance (R_θJC = 1.4 °C/W), and SOA compliance at 175 °C junction temperature.

Technical Context

This HEXFET® device employs planar vertical DMOS architecture with fully characterized dynamic parameters including C_iss, C_oss, and C_rss across 1–160 V V_DS, supporting accurate snubberless design in hard-switched topologies. Its low Q_gd/Q_g ratio (≈0.48) improves voltage-controlled turn-off robustness in synchronous rectification stages.

The integrated body diode exhibits t_rr = 140–210 ns and V_SD = 1.3 V at I_S = 7.8 A, TJ = 25 °C, enabling use in freewheeling paths without external Schottky supplementation in medium-power forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands full 48 V telecom bus transients plus 100 % margin in clamped inductive switching.
R_DS(on) max	0.235 Ω @ V_GS = 10 V, I_D = 8 A - Limits conduction loss to ≤2.2 W at 13 A continuous drain current.
Q_g typ	25 nC - Enables <100 ns turn-on with 2.5 A gate driver; reduces gate drive power in 300 kHz+ operation.
C_oss,eff	59 pF - Defines hard-switching energy loss E = ½ × C × V² ≈ 1.2 µJ per cycle at 160 V, critical for ZVS/ZCS feasibility.
E_AS	130 mJ - Supports unclamped inductive switching up to I_AS = 7.8 A without failure, essential for primary-side snubberless flyback/forward.
R_θJC	1.4 °C/W - Allows 110 W P_D dissipation with ≤154 °C ΔT from case to junction at T_C = 25 °C.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Gate, Drain, Source) plus integral drain tab (Pin 4 = Drain).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Controls channel conduction; requires 3–5.5 V threshold and ≤30 V absolute max gate-source voltage.
2 & 4	Drain	High-side switch node; electrically and thermally connected to exposed copper pad for low-inductance, high-current return path.
3	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.48 typical - Reduces Miller-induced shoot-through risk during high dv/dt transitions in half-bridge layouts.
Fully characterized C_oss vs. V_DS	57–990 pF range (V_DS = 160 V to 1 V) - Enables precise resonant timing and soft-switching analysis without estimation.
Avalanche-rated	E_AS = 130 mJ, I_AR = 7.8 A - Eliminates need for external clamping in inductive load switching applications.
Body diode Q_rr spec	750–1120 nC - Permits reliable synchronous rectification or freewheeling without external diode in cost-sensitive telecom SMPS.

Applications

Telecom Forward Converter

Industrial DC-DC Module

Use Scenario: Primary-side switch in 48 V input, 300 kHz forward converter powering base station RF modules.

IC Role / Device Role / Timing Role: High-side main switch handling 13 A peak current, operating with 160 V blocking and 25 nC gate drive demand.

Use Value: Low C_oss,eff (59 pF) minimizes turn-off loss; R_θJC = 1.4 °C/W enables compact heatsinking on PCB.

Use Scenario: Isolated 24 V to 5 V/12 V DC-DC module for PLC I/O power rails in factory automation.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with body diode recovery (t_rr = 140 ns) and low V_SD (1.3 V).

Use Value: Integrated diode eliminates discrete Schottky, reducing BOM count and layout area while maintaining <1% efficiency penalty.

Server PSU Hold-Up Circuit

Medical Imaging Power Supply

Use Scenario: Hold-up switch in 380 V DC intermediate bus converter supplying transient backup during AC dropout.

IC Role / Device Role / Timing Role: Clamped inductive switch sustaining 200 V V_DSS with E_AS = 130 mJ single-pulse capability.

Use Value: Avalanche ruggedness avoids external TVS, simplifying safety-critical hold-up stage design and certification.

Use Scenario: High-reliability X-ray generator HV supply with strict thermal derating requirements.

IC Role / Device Role / Timing Role: Primary switch operating at 175 °C junction limit with linear derating factor 0.71 W/°C above 25 °C.

Use Value: Confirmed SOA compliance up to 175 °C ensures uninterrupted operation under sustained overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK20Z	R_DS(on) = 0.28 Ω, Q_g = 22 nC, TO-220 package	Higher conduction loss, through-hole mounting, no exposed drain pad	Preferred where board space allows larger footprint and thermal via stacking is impractical.
IXTP13N20D	R_DS(on) = 0.25 Ω, Q_g = 28 nC, TO-220AB package	Higher gate charge increases driver loss; lacks C_oss,eff characterization	Used when legacy TO-220 layout compatibility is required and 3% efficiency delta is acceptable.

Compared with STP12NK20Z and IXTP13N20D, IRFR13N20DTRR offers superior thermal performance (R_θJC = 1.4 vs. ≥2.5 °C/W), lower effective output capacitance, and validated avalanche energy-making it optimal for high-density, high-frequency telecom and industrial SMPS where thermal headroom and switching loss dominate.

Availability

IRFR13N20DTRR is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, server PSU hold-up circuits, and medical imaging power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFR13N20DTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certifications.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom infrastructure, industrial automation, and medical equipment.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR13N20DTRR supports 9.2 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be verified against actual PCB copper area and airflow in the target layout.

Does this MOSFET have avalanche capability, and how is it rated?

Yes, IRFR13N20DTRR is fully rated for unclamped inductive switching: E_AS = 130 mJ (single-pulse), I_AR = 7.8 A, and E_AR = 11 mJ (repetitive). These values are measured per JEDEC standard JESD24-1 and documented in the Avalanche Characteristics section of the datasheet.

Can the body diode be used for synchronous rectification in a forward converter?

Yes-the body diode has t_rr = 140–210 ns and Q_rr = 750–1120 nC at I_F = 7.8 A, making it suitable for secondary-side synchronous rectification in forward converters up to ~250 kHz. However, its V_SD = 1.3 V at 7.8 A implies higher conduction loss than an external Schottky in high-current designs.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified from 3.0 V to 5.5 V at I_D = 250 µA. This wide range means gate drive must exceed 6 V to ensure full enhancement across process variation and temperature. A 10 V drive is recommended to achieve R_DS(on) ≤ 0.235 Ω and minimize Miller plateau duration.

IRFR13N20DTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N20DTRR FAQ

1.How can I place an order for IRFR13N20DTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DTRR reliable?

The price and inventory of IRFR13N20DTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DTRR is usually 5 days.

3.What payment methods are accepted for IRFR13N20DTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DTRR?

IRFR13N20DTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DTRR?

For technical support, including IRFR13N20DTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DTRR requirements.

6.How does Aetrix verify that IRFR13N20DTRR is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DTRR meets industry standards.

7.What is the process for return or replacement of IRFR13N20DTRR?

All IRFR13N20DTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DTRR part is unused and in its original packaging.

Return procedure for IRFR13N20DTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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