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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR18N15D

Name: IRFR18N15D
Brand: Infineon Technologies
SKU: IRFR18N15D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR18N15D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR18N15D.pdf

Description:: MOSFET N-CH 150V 18A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,448

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Product details

Overview

IRFR18N15D from Infineon Technologies (formerly International Rectifier) is a 150 V, 18 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It delivers R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 28 nC (typ), and C_oss,eff = 95 pF, enabling low switching loss in active-clamp forward and telecom 48 V input SMPS topologies.

For engineers reviewing the IRFR18N15D datasheet, IRFR18N15D pinout, IRFR18N15D application, or IRFR18N15D equivalent, key selection criteria include its characterized avalanche energy (E_AS = 200 mJ), low gate-to-drain charge (Q_gd = 14 nC typ), and fully specified dynamic capacitances - critical for snubberless hard-switching and zero-voltage transition design validation.

Technical Context

This HEXFET® device employs planar vertical DMOS structure with optimized cell pitch and trench-free gate oxide, delivering stable R_DS(on) over temperature (TC = +0.17 V/°C) and robust unclamped inductive switching capability. Its body diode exhibits t_rr = 130 ns (typ) and Q_rr = 660 nC (typ) at I_F = 11 A, supporting synchronous rectification in secondary-side switching.

The MOSFET is rated for continuous operation up to T_J = +175 °C, with R_θJC = 1.4 °C/W and linear derating factor of 0.71 W/°C above 25 °C case temperature. Its gate threshold voltage (V_GS(th) = 3.0–5.5 V) ensures reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction under noise.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands full 48 V telecom bus transients plus 200 % margin in active-clamp reset circuits
R_DS(on) max	0.125 Ω @ V_GS = 10 V, I_D = 11 A - Enables ≤2.5 W conduction loss at 18 A DC, suitable for PCB-mount thermal design
Q_g	28 nC (typ) - Reduces gate drive power and enables <100 kHz to 500 kHz operation with 6.8 Ω gate resistor
C_oss,eff	95 pF - Simplifies resonant tank modeling and soft-switching timing in ZVS forward converters
E_AS	200 mJ (single-pulse) - Supports reliable operation under unclamped inductive load faults without external snubbers
t_r/t_f	25 ns / 9.8 ns - Enables fast edge control for EMI reduction in high-density power modules
R_θJC	1.4 °C/W - Allows direct heatsinking via drain pad; supports >80 W dissipation with modest copper area

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (Pin 1), Drain (Pins 2 & 4), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires <28 nC charge for full enhancement; sensitive to ESD (±30 V rating)
2 & 4 (Drain)	Main current path anode	Electrically and thermally connected to exposed copper pad; carries full load current and dissipates heat directly to PCB
3 (Source)	Reference node & return path	Serves as local ground reference for gate drive; connects to source of synchronous rectifier or controller feedback network

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	14/28 nC = 0.5 - Minimizes Miller-induced shoot-through risk during hard switching in half-bridge configurations
Fully characterized C_oss vs. V_DS	C_oss = 88 pF @ 120 V, 1160 pF @ 1 V - Enables accurate dead-time optimization and ZVS boundary prediction
Specified avalanche capability	I_AR = 11 A, E_AS = 200 mJ - Eliminates need for external clamping in flyback or forward converter primary switches
Body diode t_rr & Q_rr	t_rr = 130 ns, Q_rr = 660 nC @ I_F = 11 A - Supports moderate-frequency synchronous rectification without excessive reverse recovery loss

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48 V input isolated DC-DC module supplying 12 V/20 A to base station RF power amplifiers.

IC Role / Device Role / Timing Role: Primary-side main switch operating at 250 kHz with active-clamp reset; handles 18 A peak drain current.

Use Value: Low C_oss,eff (95 pF) and fast t_f (9.8 ns) reduce clamp capacitor stress and improve ZVS window stability across line/load variation.

Use Scenario: Isolated 380 V bus to 48 V intermediate bus converter in server PSU with active-clamp topology.

IC Role / Device Role / Timing Role: Clamp switch managing energy recycling from transformer leakage inductance during reset phase.

Use Value: Rated 150 V V_DSS and 200 mJ E_AS ensure safe operation during transient overvoltage events on clamp node.

Industrial SMPS

High-Frequency Flyback Converters

Use Scenario: 24–48 V input industrial PLC power supply delivering 5 V/10 A with tight regulation and high reliability.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback operating up to 300 kHz.

Use Value: R_DS(on) = 0.125 Ω minimizes conduction loss at full load; Q_g = 28 nC allows efficient gate driving with low-cost SOT-23 MOSFET drivers.

Use Scenario: Compact AC-DC adapter for medical instrumentation requiring low EMI and high efficiency at light loads.

IC Role / Device Role / Timing Role: Primary-side switch implementing frequency foldback and valley switching for improved light-load efficiency.

Use Value: Fast t_r/t_f (25 ns/9.8 ns) and low Q_gd enable precise zero-crossing detection and reduced switching noise in EMI-sensitive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF15	R_DS(on) = 0.14 Ω (max), Q_g = 32 nC, TO-220 package	Higher thermal resistance (R_θJA ≈ 62 °C/W), no exposed drain pad	Preferred only when through-hole mounting and higher peak current margin (>20 A) are required
IXTP18N15P	R_DS(on) = 0.135 Ω (max), Q_g = 25 nC, TO-220FP package	Lower gate charge but higher R_DS(on); lacks full avalanche rating documentation	Considered where gate drive efficiency is prioritized over ruggedness in non-fault-tolerant designs

Compared with STP18NF15 and IXTP18N15P, the IRFR18N15D offers superior thermal performance via D-Pak's low R_θJC (1.4 °C/W), verified avalanche robustness (200 mJ), and tighter C_oss characterization - making it optimal for compact, high-reliability SMPS where board space and fault immunity are critical.

Availability

IRFR18N15D is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward topologies, and industrial SMPS requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for IRFR18N15D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power supplies - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFR18N15D suitable for synchronous rectification?

No - it is a primary-side N-channel MOSFET designed for high-side switching. Its body diode (V_SD = 1.3 V, t_rr = 130 ns) is not optimized for secondary-side synchronous rectification; dedicated low-V_F, fast-recovery FETs like IRF7832 are recommended for that role.

What is the maximum recommended gate resistor value for 250 kHz operation?

Based on Q_g = 28 nC and typical driver rise/fall time targets, a 6.8 Ω gate resistor is validated per datasheet Fig. 10b. For 250 kHz with 50 % duty cycle, this yields ~15 ns effective turn-on delay and avoids excessive gate oscillation while maintaining <1 W gate drive loss.

Does IRFR18N15D require a heatsink in D-Pak footprint?

Not necessarily - with R_θJC = 1.4 °C/W and P_D = 110 W max, a 2 oz copper pour (≥4 cm²) under the drain pad achieves T_J < 125 °C at 80 W dissipation. Forced air or small clip-on heatsink is advised only above 90 W continuous load.

Can IRFR18N15D replace IRFU18N15D in existing designs?

Yes - both share identical electrical specs and D-Pak package, but IRFR18N15D uses standard gate threshold (3.0–5.5 V), while IRFU18N15D is a logic-level variant (V_GS(th) = 1.0–2.5 V). Verify gate drive voltage compatibility: 10 V drive works for both, but 5 V drive may not fully enhance IRFR18N15D.

IRFR18N15D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR18N15D FAQ

1.How can I place an order for IRFR18N15D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR18N15D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR18N15D reliable?

The price and inventory of IRFR18N15D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR18N15D is usually 5 days.

3.What payment methods are accepted for IRFR18N15D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR18N15D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR18N15D?

IRFR18N15D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR18N15D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR18N15D?

For technical support, including IRFR18N15D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR18N15D requirements.

6.How does Aetrix verify that IRFR18N15D is sourced from the original manufacturer or authorized distributors?

All IRFR18N15D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR18N15D meets industry standards.

7.What is the process for return or replacement of IRFR18N15D?

All IRFR18N15D units undergo pre-shipment inspection (PSI). If there is an issue with IRFR18N15D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR18N15D part is unused and in its original packaging.

Return procedure for IRFR18N15D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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