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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR18N15DPBF

Name: IRFR18N15DPBF
Brand: Infineon Technologies
SKU: IRFR18N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR18N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR18N15DPBF.pdf

Description:: MOSFET N-CH 150V 18A DPAK

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Product details

Overview

IRFR18N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 18A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency DC-DC converters including active-clamp forward topologies. It features 0.125Ω R_DS(on) at V_GS = 10V, 28nC typical total gate charge, and fully characterized C_oss,eff = 95pF for simplified snubberless design in telecom 48V input power supplies.

For engineers reviewing the IRFR18N15DPBF datasheet, IRFR18N15DPBF pinout, IRFR18N15DPBF application, or IRFR18N15DPBF equivalent, key selection criteria include its low Q_gd/Q_g ratio for reduced switching loss, avalanche-rated 200mJ single-pulse energy, and validated performance in active-clamp reset circuits requiring robust dv/dt immunity (3.3V/ns).

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve low gate-drain charge (Q_gd = 14nC typ.) and tightly controlled output capacitance (C_oss = 88pF at V_DS = 120V). Its R_DS(on) exhibits +0.17V/°C temperature coefficient and remains stable up to T_J = 175°C.

The device integrates a fast-recovery body diode with t_rr = 130ns (typ.), Q_rr = 660nC (typ.), and V_SD = 1.3V at I_S = 11A, enabling efficient synchronous rectification and unclamped inductive switching in hard-switched SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Withstands 48V-input DC-DC bus transients up to 120V without breakdown
R_DS(on) max	0.125Ω @ V_GS = 10V, I_D = 11A - Enables ≤2.5W conduction loss at 18A continuous current
Q_g typ.	28nC - Reduces gate drive power requirement in 300–500kHz switching applications
C_oss,eff	95pF - Allows accurate prediction of turn-off energy and snubber sizing in active-clamp topologies
E_AS	200mJ - Supports reliable operation under unclamped inductive switching stress in forward converters
t_rr	130ns typ. - Minimizes reverse recovery loss during high-frequency body-diode commutation

Pinout & Package

IRFR18N15DPBF uses the surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal enhancement. Pin assignment is standardized across HEXFET D-Pak devices.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100nA leakage control; sensitive to ESD
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface - primary thermal path to heatsink or inner copper layer

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.50 (14nC/28nC) - Reduces Miller-induced shoot-through risk in half-bridge configurations
Fully characterized C_oss vs. V_DS	88pF @ 120V, 1160pF @ 1V - Enables precise modeling of turn-off loss across full voltage swing
Avalanche-rated	200mJ single-pulse, 11A I_AR - Eliminates need for external clamping in active-clamp forward reset paths
Lead-free construction	RoHS-compliant per JEDEC J-STD-020 - Qualified for reflow up to 300°C (10s, 1.6mm from case)

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48V input, 12V/30A isolated DC-DC module in central office power systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 350kHz with active-clamp reset.

Use Value: Low C_oss,eff and high E_AS enable zero-voltage switching (ZVS) transition and eliminate clamp capacitor stress.

Use Scenario: 36–75V input telecom brick delivering 5V/60A to server motherboards.

IC Role / Device Role / Timing Role: Main power switch in active-clamp forward topology with 150kHz switching frequency.

Use Value: 0.125Ω R_DS(on) and 28nC Q_g reduce combined conduction and switching losses below 3.2W at full load.

Industrial SMPS

UPS Inverter Stages

Use Scenario: 24V/48V battery-backed industrial PLC power supply with 200W output.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant stage.

Use Value: Fast body diode (t_rr = 130ns) minimizes dead-time loss and improves light-load efficiency by >2.1%.

Use Scenario: Online double-conversion UPS with 1kVA output using full-bridge inverter.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage driving transformer primary.

Use Value: 175°C T_J(max) and 1.4°C/W R_θJC support sustained 18A operation under 40°C ambient with forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	R_DS(on) = 0.14Ω, Q_g = 32nC, C_oss,eff = 110pF	Higher switching loss in >300kHz designs due to elevated Q_gd and C_oss	Acceptable for lower-frequency (<200kHz) flyback or forward converters where thermal margin exceeds 15°C
IXTP18N15X4	R_DS(on) = 0.115Ω, Q_g = 24nC, no published C_oss,eff data	Lacks documented avalanche rating (E_AS not specified), limiting use in active-clamp topologies	Preferred for non-avalanche-critical synchronous buck stages where lowest R_DS(on) dominates selection

Compared with STP16NF15 and IXTP18N15X4, IRFR18N15DPBF uniquely combines verified C_oss,eff, 200mJ E_AS, and D-Pak thermal performance-making it the only option qualified for telecom-grade active-clamp forward converters requiring both ZVS capability and unclamped inductive ruggedness.

Availability

IRFR18N15DPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial SMPS requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFR18N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET portfolio with full documentation and reliability testing.

This device belongs to the HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom, industrial, and computing infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR18N15DPBF supports 13A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within its 1.4°C/W junction-to-case thermal resistance.

Does this MOSFET require a gate resistor for stability in 500kHz operation?

Yes - a 6.8Ω gate resistor is used in the datasheet's switching time test circuit (Fig 10a) and recommended for stable 500kHz operation. This value damps gate oscillation while maintaining acceptable turn-on/turn-off times (t_d(on) = 8.8ns, t_f = 9.8ns) without excessive driver power loss.

Can IRFR18N15DPBF replace IRFR120 in existing designs?

No - IRFR120 is a 100V, 12A device with higher R_DS(on) (0.27Ω) and different gate charge profile. Substituting IRFR18N15DPBF requires verifying layout clearance for 150V operation, recalculating snubber components due to lower C_oss, and validating avalanche margin in unclamped inductive loads.

Is the body diode suitable for synchronous rectification at 200kHz?

Yes - with t_rr = 130ns (typ.) and Q_rr = 660nC (typ.) at I_F = 11A, the body diode supports synchronous rectification up to 200kHz in forward and LLC topologies. However, external Schottky diodes remain preferred above 250kHz due to lower Q_rr and V_F.

IRFR18N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR18N15DPBF FAQ

1.How can I place an order for IRFR18N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR18N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR18N15DPBF reliable?

The price and inventory of IRFR18N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR18N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFR18N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR18N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR18N15DPBF?

IRFR18N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR18N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR18N15DPBF?

For technical support, including IRFR18N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR18N15DPBF requirements.

6.How does Aetrix verify that IRFR18N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFR18N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR18N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFR18N15DPBF?

All IRFR18N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR18N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR18N15DPBF part is unused and in its original packaging.

Return procedure for IRFR18N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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