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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR18N15DTR

Name: IRFR18N15DTR
Brand: Infineon Technologies
SKU: IRFR18N15DTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR18N15DTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR18N15DTR.pdf

Description:: MOSFET N-CH 150V 18A DPAK

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Product details

Overview

IRFR18N15DTR from Infineon Technologies (formerly International Rectifier) is a 150V, 18A N-channel enhancement-mode D-Pak (TO-252AA) HEXFET® Power MOSFET optimized for high-frequency DC-DC converters. It features 0.125Ω R_DS(on) at V_GS = 10V, 28nC typical total gate charge, and fully characterized effective output capacitance (C_oss,eff = 95pF), enabling efficient active-clamp forward and telecom 48V input SMPS topologies.

For engineers reviewing the IRFR18N15DTR datasheet, IRFR18N15DTR pinout, IRFR18N15DTR application, or IRFR18N15DTR equivalent, key selection criteria include avalanche energy rating (200mJ single-pulse), diode reverse recovery performance (Q_rr = 660–980nC), and thermal resistance (R_θJC = 1.4°C/W), critical for high-reliability power stage design in constrained PCB layouts.

Technical Context

This MOSFET employs planar silicon HEXFET® technology with optimized cell pitch and trench-free structure to minimize gate-drain charge (Q_gd = 14–21nC) and reduce switching losses in hard-switched topologies. Its low C_iss/C_oss ratio (900pF/190pF at V_DS = 25V) supports stable zero-voltage switching (ZVS) initiation in resonant converters.

The device integrates a robust body diode with 130–190ns reverse recovery time and 1.3V forward voltage at 11A, enabling synchronous rectification replacement in flyback and forward converters without external Schottky diodes. Junction temperature range spans –55°C to +175°C, supporting operation in sealed telecom enclosures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Withstands 48V input-derived bus voltages with ≥3× safety margin in active-clamp forward converters.
R_DS(on) max	0.125Ω @ V_GS = 10V - Enables ≤2.5W conduction loss at 11A continuous drain current (T_C = 100°C).
Q_g typ	28nC - Reduces gate drive power requirement and enables use of low-current drivers (e.g., UCC27531) in 300kHz+ designs.
C_oss,eff	95pF - Simplifies snubberless ZVS design by providing predictable energy storage during turn-off transitions.
E_AS	200mJ - Supports unclamped inductive switching in peak-current-mode controllers without external clamping.
R_θJC	1.4°C/W - Allows direct heatsinking via PCB copper pour to maintain T_J < 125°C at 110W P_D (T_C = 25°C).

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with drain connected to tab (pins 2 and 4 electrically common).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10V logic-level drive; Miller plateau occurs near 4.5V, requiring clean gate routing to avoid shoot-through.
2 & 4 (Drain)	Main power switch node	Electrically tied to exposed copper pad; must be routed over large thermal plane for heat dissipation and low-inductance high-side switching.
3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; requires low-impedance Kelvin connection to minimize V_GS sensing error.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	14–21nC / 28–43nC → improves controllability during Miller region and reduces EMI in fast-switching SMPS.
Fully characterized C_oss vs. V_DS	88pF @ 120V, 1160pF @ 1V → enables accurate soft-switching timing calculations across full operating range.
Body diode Q_rr & t_rr	660–980nC / 130–190ns → permits bidirectional current handling in LLC half-bridge without external freewheeling diode.
Avalanche-rated	200mJ single-pulse E_AS → eliminates need for external RCD clamp in flyback transformers with leakage inductance up to 25µH @ 11A.

Applications

Telecom 48V DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: Step-down conversion from 48V telecom rectified input to 12V/5V intermediate bus in NEBS-compliant base station power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500kHz with synchronous rectification on secondary side.

Use Value: Low R_DS(on) and C_oss,eff reduce conduction and switching losses, enabling >94% efficiency at full load while maintaining junction temperature below 125°C.

Use Scenario: High-efficiency isolated DC-DC stage in industrial PLC power modules requiring precise regulation and low standby loss.

IC Role / Device Role / Timing Role: Main switching FET in active-clamp forward topology, where clamp capacitor recycles magnetizing energy and resets transformer core.

Use Value: Fully characterized avalanche capability allows safe operation during clamp capacitor voltage overshoot, eliminating need for overvoltage protection circuitry.

Server VRM High-Side Switches

Industrial Motor Drive Half-Bridge Legs

Use Scenario: 12V input to 1.2V/100A CPU core supply using multiphase buck converter with integrated power stages.

IC Role / Device Role / Timing Role: High-side switch in 300–600kHz buck cell, paired with low-side MOSFET and controller IC (e.g., ISL6367).

Use Value: 28nC Q_g enables fast turn-on with minimal gate driver power consumption, reducing overall phase-loss contribution by ~1.2W per phase.

Use Scenario: 24–48V DC bus driving brushed DC motors or stepper coils in factory automation actuators.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge motor drive, commutating inductive loads with PWM frequencies up to 20kHz.

Use Value: Robust body diode with 1.3V V_SD ensures reliable freewheeling during dead-time, preventing voltage spikes that could damage gate oxide.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF15	R_DS(on) = 0.14Ω, Q_g = 32nC, TO-220 package	Higher thermal resistance (R_θJC = 2.5°C/W); unsuitable for space-constrained SMT designs	Select when through-hole mounting and higher avalanche margin (E_AS = 320mJ) are prioritized over board area.
IXTP18N15P	R_DS(on) = 0.13Ω, Q_g = 24nC, TO-220FP package	No exposed drain pad; lower gate charge but limited PCB thermal dissipation capability	Prefer for low-profile through-hole applications where gate drive efficiency outweighs thermal management needs.

Compared with STP18NF15 and IXTP18N15P, IRFR18N15DTR delivers superior thermal performance in SMT layouts due to its D-Pak drain-tab construction and lower R_θJC, making it optimal for high-power-density telecom and server power supplies where airflow is restricted.

Availability

IRFR18N15DTR is available at Aetrix Electronics and suitable for telecom 48V DC-DC converters, active-clamp forward converters, and industrial motor drive half-bridge legs requiring stable component supply and long-term production continuity.

Supply support for IRFR18N15DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion systems where thermal density and dynamic loss minimization are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR18N15DTR supports 13A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating from the 18A rating at 25°C reflects thermal limitations of the D-Pak package under sustained high-power operation without forced cooling.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes - a 6.8Ω gate resistor is used in the official switching time test circuit (Figure 10a) to dampen ringing and control dv/dt. For 300–500kHz operation, a 5–10Ω non-inductive resistor placed adjacent to the gate pin is recommended to prevent oscillation and ensure clean turn-on/turn-off waveforms.

Can the body diode be used for synchronous rectification in a flyback converter?

No - the body diode has relatively high Q_rr (660–980nC) and slow t_rr (130–190ns), making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling and clamping functions only; external Schottky or MOSFET-based synchronous rectifiers are required for >100kHz flyback outputs.

Is the IRFR18N15DTR lead-free and RoHS compliant?

Yes - the IRFR18N15DTR is manufactured in accordance with EU RoHS Directive 2011/65/EU and is lead-free, halogen-free, and compliant with IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH without dry-pack requirements.

IRFR18N15DTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR18N15DTR FAQ

1.How can I place an order for IRFR18N15DTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR18N15DTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR18N15DTR reliable?

The price and inventory of IRFR18N15DTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR18N15DTR is usually 5 days.

3.What payment methods are accepted for IRFR18N15DTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR18N15DTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR18N15DTR?

IRFR18N15DTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR18N15DTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR18N15DTR?

For technical support, including IRFR18N15DTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR18N15DTR requirements.

6.How does Aetrix verify that IRFR18N15DTR is sourced from the original manufacturer or authorized distributors?

All IRFR18N15DTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR18N15DTR meets industry standards.

7.What is the process for return or replacement of IRFR18N15DTR?

All IRFR18N15DTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR18N15DTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR18N15DTR part is unused and in its original packaging.

Return procedure for IRFR18N15DTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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