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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR18N15DTRLP

Name: IRFR18N15DTRLP
Brand: Infineon Technologies
SKU: IRFR18N15DTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR18N15DTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR18N15DTRLP.pdf

Description:: MOSFET N-CH 150V 18A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR18N15DTRLP from Infineon Technologies (formerly International Rectifier) is a 150 V, 18 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters including active-clamp forward and telecom 48 V input topologies. It features 0.125 Ω R_DS(on) at V_GS = 10 V, 28 nC typical total gate charge, and fully characterized C_oss,eff = 95 pF for simplified snubberless design.

For engineers reviewing the IRFR18N15DTRLP datasheet, IRFR18N15DTRLP pinout, IRFR18N15DTRLP application, or IRFR18N15DTRLP equivalent, key selection criteria include avalanche ruggedness (E_AS = 200 mJ), diode reverse recovery performance (Q_rr = 660–980 nC), and thermal resistance (R_θJC = 1.4 °C/W) in high-power-density SMPS designs.

Technical Context

This HEXFET device employs planar vertical DMOS structure with optimized charge balance for low Q_gd/Q_g ratio (14/28 nC typ), enabling fast switching with reduced Miller-induced shoot-through risk. Its fully characterized C_oss across 1–120 V (88–1160 pF) and effective C_oss,eff = 95 pF support accurate soft-switching timing prediction in resonant and active-clamp topologies.

The integrated body diode exhibits 1.3 V forward voltage at 11 A and 130–190 ns trr with controlled di/dt = 100 A/µs, making it suitable for synchronous rectification and bidirectional power flow where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage for 48 V telecom DC-DC primary-side switches
R_DS(on) max	0.125 Ω @ V_GS = 10 V - Enables ≤2.5 W conduction loss at 11 A continuous current
Q_g typ	28 nC - Determines gate driver power requirement and switching speed in 100–500 kHz operation
C_oss,eff	95 pF - Used to calculate resonant tank energy and zero-voltage switching (ZVS) boundary
E_AS	200 mJ - Supports unclamped inductive switching stress in active-clamp forward converters
trr / Q_rr	130–190 ns / 660–980 nC - Critical for minimizing diode recovery losses and voltage overshoot during hard commutation
R_θJC	1.4 °C/W - Allows 78.6 W power dissipation before reaching 175 °C junction limit under heatsinked conditions

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level drive; 5.5 V V_GS(th) max ensures robust turn-on margin
Drain (D)	Main power output terminal	Connected to PCB copper pour via exposed tab; carries full load current and withstands 150 V transients
Source (S)	Reference node for gate drive	Serves as return path for load current and gate loop; critical for minimizing common-source inductance in high-dI/dt switching

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.5 (14/28 nC) - Reduces Miller plateau duration and improves controllability during dV/dt transitions
Fully characterized C_oss vs. V_DS	88–1160 pF over 1–120 V - Enables precise resonant timing and ZVS design without empirical tuning
Avalanche-rated	E_AS = 200 mJ single-pulse - Eliminates need for external clamping in inductive switching failure modes
Lead-free construction	RoHS-compliant D-Pak with matte tin plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)
High-temperature operation	T_J = –55 to +175 °C - Supports sealed telecom power supplies operating in elevated ambient environments

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48 V input, 12 V/30 A output isolated DC-DC module in central office power systems.

IC Role / Device Role / Timing Role: Primary-side switch operating at 250–300 kHz with active-clamp reset to recover leakage energy.

Use Value: Low C_oss,eff (95 pF) enables reliable ZVS across full load range, reducing switching loss by ≥35% vs. legacy MOSFETs.

Use Scenario: High-efficiency 380 V bus-to-12 V intermediate bus converter in server power supplies.

IC Role / Device Role / Timing Role: Main switching FET in active-clamp forward topology with 100–200 ns dead-time control.

Use Value: Controlled trr (130–190 ns) and low Q_rr minimize voltage spike on clamp capacitor, extending capacitor lifetime.

Industrial SMPS

Motor Drive Half-Bridge Stages

Use Scenario: 24–48 V input industrial AC/DC front-end supplying PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant stage.

Use Value: Body diode V_SD = 1.3 V at 11 A reduces conduction loss by 18% compared to Schottky-assisted rectification.

Use Scenario: Low-voltage (≤60 V) BLDC motor inverter stage for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side switch in half-bridge driving 1–3 kW loads with PWM up to 40 kHz.

Use Value: R_θJC = 1.4 °C/W allows direct heatsink mounting without thermal interface material, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF15	R_DS(on) = 0.14 Ω, Q_g = 32 nC, C_oss,eff = 110 pF	Higher conduction and switching loss; less suitable for >300 kHz operation	Prefer when cost sensitivity outweighs efficiency targets in <200 kHz designs
IXTP18N15X4	R_DS(on) = 0.115 Ω, Q_g = 22 nC, no published C_oss,eff data	Lower gate charge improves switching speed but lacks C_oss characterization for ZVS design	Choose when gate drive strength is limiting and C_oss-based timing is not required

Compared with STP18NF15 and IXTP18N15X4, IRFR18N15DTRLP uniquely delivers verified C_oss,eff = 95 pF and avalanche energy rating (200 mJ), making it the only option qualified for active-clamp forward converters requiring both ZVS predictability and fault robustness.

Availability

IRFR18N15DTRLP is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial SMPS requiring stable component supply, RoHS compliance, and MSL1 handling capability.

Supply support for IRFR18N15DTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and computing applications.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switch-mode power conversion in telecom, server, and industrial power supplies.

FAQ

Is IRFR18N15DTRLP suitable for 500 kHz operation?

Yes - its 28 nC Q_g, 14 nC Q_gd, and 95 pF C_oss,eff enable efficient operation up to 500 kHz in hard-switched topologies when paired with a 2 A peak gate driver. Thermal limits (R_θJC = 1.4 °C/W) require adequate heatsinking above 200 kHz at full load.

What is the maximum recommended gate resistor for this MOSFET?

A 6.8 Ω gate resistor is specified in the datasheet for switching time measurements (td(on) = 8.8 ns, tf = 9.8 ns). For 250–300 kHz active-clamp forward use, 4.7–10 Ω provides optimal trade-off between EMI suppression and switching loss; values >15 Ω increase Miller-induced delay and risk false turn-on.

Does IRFR18N15DTRLP have a built-in ESD protection diode?

No - the device has no integrated gate protection diode. External 12 V Zener clamping between gate and source is required for robustness against >±30 V transients, per absolute maximum rating V_GS = ±30 V. Layout must minimize gate loop inductance to prevent ringing-induced overstress.

Can this MOSFET replace IRFR18N15DPbF in existing designs?

Yes - IRFR18N15DTRLP is the tape-and-reel packaging variant of IRFR18N15DPbF (same die, same D-Pak package, same Pb-free finish). Electrical specs, thermal ratings, and pinout are identical; only packaging format (reel vs. tube) differs. No layout or firmware changes are needed for drop-in replacement.

IRFR18N15DTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR18N15DTRLP FAQ

1.How can I place an order for IRFR18N15DTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR18N15DTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR18N15DTRLP reliable?

The price and inventory of IRFR18N15DTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR18N15DTRLP is usually 5 days.

3.What payment methods are accepted for IRFR18N15DTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR18N15DTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR18N15DTRLP?

IRFR18N15DTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR18N15DTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR18N15DTRLP?

For technical support, including IRFR18N15DTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR18N15DTRLP requirements.

6.How does Aetrix verify that IRFR18N15DTRLP is sourced from the original manufacturer or authorized distributors?

All IRFR18N15DTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR18N15DTRLP meets industry standards.

7.What is the process for return or replacement of IRFR18N15DTRLP?

All IRFR18N15DTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFR18N15DTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR18N15DTRLP part is unused and in its original packaging.

Return procedure for IRFR18N15DTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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