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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR18N15DTRR

Name: IRFR18N15DTRR
Brand: Infineon Technologies
SKU: IRFR18N15DTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR18N15DTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR18N15DTRR.pdf

Description:: MOSFET N-CH 150V 18A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR18N15DTRR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 150 V V_DSS, 0.125 Ω R_DS(on) at V_GS = 10 V, and 18 A continuous drain current at T_C = 25 °C. It is optimized for high-frequency DC-DC converters including active-clamp forward topologies in telecom 48 V input systems.

For engineers reviewing the IRFR18N15DTRR datasheet, IRFR18N15DTRR pinout, IRFR18N15DTRR application, or IRFR18N15DTRR equivalent, key selection criteria include its low Q_gd (14–21 nC), fully characterized C_oss,eff (95 pF), avalanche-rated operation (E_AS = 200 mJ), body diode recovery performance (t_rr = 130–190 ns), and thermal resistance R_θJC = 1.4 °C/W.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized gate charge distribution to minimize switching losses in hard-switched SMPS. Its low Q_gd/Q_g ratio and tightly specified C_oss across V_DS (88–1160 pF) support predictable snubberless design in active-clamp and resonant converters.

The device features fully characterized unclamped inductive switching behavior, with validated single-pulse avalanche energy up to 200 mJ and repetitive avalanche rating (I_AR = 11 A, E_AR = 11 mJ). Its body diode exhibits V_SD = 1.3 V at I_S = 11 A and controlled reverse recovery (Q_rr = 660–980 nC, di/dt = 100 A/µs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before avalanche onset; supports 48 V telecom bus with ≥3× safety margin.
R_DS(on) max	0.125 Ω @ V_GS = 10 V, I_D = 11 A - Enables <1.5 W conduction loss at 11 A, critical for thermally constrained PCB-mount designs.
Q_gd	14–21 nC - Low Miller charge reduces gate drive power and improves immunity to dv/dt-induced turn-on in high-side configurations.
C_oss,eff	95 pF - Effective output capacitance over full V_DS swing; used directly in ZVS transition time and resonant tank calculations.
E_AS	200 mJ - Single-pulse avalanche energy rating enables robustness against inductive switching transients without external clamping.
t_rr	130–190 ns - Body diode reverse recovery time under defined IF = 11 A, di/dt = 100 A/µs; impacts commutation loss and EMI in synchronous rectification.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting for high-power density layouts with verified thermal derating.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with drain connected to tab (pins 2 and 4 electrically common).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±30 V gate drive; low input capacitance (C_iss = 900 pF) eases driver selection.
2 & 4	Drain	Main high-side power terminal; internally tied to exposed copper pad; primary heat path to PCB copper pour or heatsink.
3	Source	Power return and gate reference node; connects to low-side switch or ground plane; defines local V_GS reference.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~50% (14/28 nC typical) - Reduces sensitivity to Miller-induced false turn-on during high dv/dt switching events.
Fully characterized C_oss vs. V_DS	Specified at 1.0 V, 25 V, and 120 V - Enables accurate soft-switching timing prediction without curve-fitting assumptions.
Validated avalanche capability	E_AS = 200 mJ, I_AR = 11 A - Eliminates need for external avalanche protection in well-bounded inductive loads.
Optimized body diode recovery	Q_rr = 660–980 nC, t_rr = 130–190 ns - Supports synchronous rectification in forward converters with minimal commutation loss.

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48 V input to 12 V/24 V isolated output in telecom shelf power supplies with strict efficiency and EMI targets.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz; handles clamp reset and main power transfer.

Use Value: Low Q_gd and C_oss,eff reduce switching loss by >15% versus comparable 150 V MOSFETs, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Clamp switch in active-clamp forward topology where precise V_DS slew rate control minimizes ringing and EMI.

IC Role / Device Role / Timing Role: Clamp FET conducting during magnetizing reset phase; must sustain high dv/dt without spurious turn-on.

Use Value: Peak diode recovery dv/dt rating of 3.3 V/ns and low Q_gd ensure stable clamp action even under fast transient load steps.

Industrial SMPS

Server VRMs

Use Scenario: 36–75 V input industrial power modules requiring long-term reliability under wide temperature range (−40 °C to +125 °C).

IC Role / Device Role / Timing Role: Main switching element in half-bridge or push-pull topologies; operates with 100% duty cycle capability at reduced current.

Use Value: R_DS(on) tempco of 0.17 V/°C ensures stable current sharing in paralleled configurations across −55 °C to +175 °C junction range.

Use Scenario: High-current point-of-load (POL) converters supplying CPU/GPU rails with tight voltage regulation and fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stage; conducts high peak currents (>30 A pulsed) with low forward drop.

Use Value: Body diode V_SD = 1.3 V at 11 A and low Q_rr reduce dead-time conduction loss and improve light-load efficiency by ~2.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	R_DS(on) = 0.14 Ω (higher), Q_gd = 22 nC (higher), no published C_oss,eff spec	Limited avalanche rating (E_AS = 120 mJ); less suitable for unclamped inductive switching	Acceptable for fixed-frequency flyback or LLC where avalanche stress is absent and thermal margin exists.
IXTP18N15X4	R_DS(on) = 0.115 Ω (lower), Q_gd = 12 nC (lower), but TO-220 package (higher R_θJA)	Through-hole mounting only; unsuitable for high-density SMT designs; higher board assembly cost	Preferred when thermal mass and heatsink interface dominate over footprint constraints and assembly automation.

Compared with STP16NF15 and IXTP18N15X4, IRFR18N15DTRR delivers superior switching efficiency in SMT-based telecom SMPS due to its balanced Q_gd/C_oss,eff profile and validated avalanche margin-without sacrificing manufacturability or thermal performance on standard FR4 PCBs.

Availability

IRFR18N15DTRR is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial SMPS requiring stable component supply, consistent parametric performance, and long-lifecycle availability.

Supply support for IRFR18N15DTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation dating to the HEXFET® architecture.

IRFR18N15DTRR belongs to the legacy International Rectifier HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom, server, and industrial infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR18N15DTRR supports 13 A continuous drain current at T_C = 100 °C with V_GS = 10 V, per Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be verified against actual PCB copper area and airflow in the target layout.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 6.8 Ω, as used in characterization) is required to dampen ringing and control switching speed. The device's Q_g = 28–43 nC and low C_iss make it sensitive to parasitic oscillation without proper gate network design and PCB layout.

Can IRFR18N15DTRR be used in synchronous rectification?

Yes-the integrated body diode has characterized t_rr = 130–190 ns and Q_rr = 660–980 nC at I_F = 11 A, di/dt = 100 A/µs, enabling use as a synchronous rectifier in forward or LLC converters where gate timing aligns with zero-voltage switching transitions.

Is the drain pad (pins 2 and 4) electrically isolated from the source?

No-pins 2 and 4 are both drain terminals and are internally connected to the exposed copper pad. The drain is not isolated from the pad; the source (pin 3) is the only isolated terminal. PCB layout must avoid shorting the drain pad to source or gate traces.

IRFR18N15DTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR18N15DTRR FAQ

1.How can I place an order for IRFR18N15DTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR18N15DTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR18N15DTRR reliable?

The price and inventory of IRFR18N15DTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR18N15DTRR is usually 5 days.

3.What payment methods are accepted for IRFR18N15DTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR18N15DTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR18N15DTRR?

IRFR18N15DTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR18N15DTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR18N15DTRR?

For technical support, including IRFR18N15DTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR18N15DTRR requirements.

6.How does Aetrix verify that IRFR18N15DTRR is sourced from the original manufacturer or authorized distributors?

All IRFR18N15DTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR18N15DTRR meets industry standards.

7.What is the process for return or replacement of IRFR18N15DTRR?

All IRFR18N15DTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR18N15DTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR18N15DTRR part is unused and in its original packaging.

Return procedure for IRFR18N15DTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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