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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR18N15DTRRP

Name: IRFR18N15DTRRP
Brand: Infineon Technologies
SKU: IRFR18N15DTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR18N15DTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR18N15DTRRP.pdf

Description:: MOSFET N-CH 150V 18A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR18N15DTRRP from Infineon Technologies (formerly International Rectifier) is a 150 V, 18 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and active-clamp forward topologies. It features 0.125 Ω R_DS(on) at V_GS = 10 V, 28 nC typical total gate charge, and fully characterized C_oss,eff = 95 pF for simplified snubberless design in telecom 48 V input power supplies.

For engineers reviewing the IRFR18N15DTRRP datasheet, IRFR18N15DTRRP pinout, IRFR18N15DTRRP application, or IRFR18N15DTRRP equivalent, key selection criteria include avalanche energy rating (200 mJ), diode reverse recovery performance (Q_rr = 660–980 nC), gate charge profile, and thermal resistance (R_θJC = 1.4 °C/W) for SMPS layout and thermal management.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted edge termination to achieve stable 150 V breakdown voltage (V_(BR)DSS) and low temperature coefficient (0.17 V/°C). Its gate threshold voltage (3.0–5.5 V) ensures robust noise immunity in high-noise switching environments.

The MOSFET integrates a fast-recovery body diode with t_rr = 130–190 ns and V_SD = 1.3 V at I_S = 11 A, enabling efficient synchronous rectification and active-clamp reset operation without external diodes in forward converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands up to 150 V drain-source blocking voltage before avalanche conduction.
R_DS(on) max	0.125 Ω @ V_GS = 10 V, I_D = 11 A - Determines conduction loss and junction temperature rise under full-load conditions.
Q_g typ	28 nC - Defines gate drive energy requirement and switching speed in hard-switched topologies.
C_oss,eff	95 pF - Effective output capacitance over 0–120 V range; used directly in resonant timing and soft-switching loss calculations.
E_AS	200 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without external clamping.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance; critical for heatsink sizing when mounted on PCB copper pour or external heatsink.
t_rr	130–190 ns - Body diode reverse recovery time; impacts shoot-through risk and EMI in bridge configurations.

Pinout & Package

IRFR18N15DTRRP is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package supports standard reflow profiles and offers low-profile mounting for space-constrained power stages.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to power ground or low-side switch node in half-bridge.
Pin 2 (Gate)	Control terminal (G)	High-impedance input controlling channel conduction; requires <30 V absolute max gate-source voltage.
Pin 3 (Drain)	Power terminal (D)	Exposed copper pad on bottom surface; carries full load current and serves as primary thermal path to PCB.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	14/28 nC = 0.5 - Reduces Miller-induced switching delay and improves controllability during hard commutation.
Fully characterized C_oss vs. V_DS	1160 pF @ 1 V, 88 pF @ 120 V - Enables accurate modeling of capacitive turn-on loss and ZVS boundary prediction.
Avalanche-rated	200 mJ single-pulse, 11 A I_AR - Eliminates need for external RCD clamp in active-clamp forward and flyback converters.
Lead-free construction	RoHS-compliant, Pb-free terminations - Meets global environmental compliance requirements without derating.

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48 V input, 12 V/30 A isolated DC-DC module for base station power distribution.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz with zero-voltage switching assistance.

Use Value: Low C_oss,eff and controlled Q_gd enable reliable ZVS across line/load range, reducing switching losses by >35% vs. legacy MOSFETs.

Use Scenario: 380 V bus, 48 V output active-clamp forward converter in server PSU.

IC Role / Device Role / Timing Role: Main power switch handling clamp energy recycling and main power transfer phases.

Use Value: 200 mJ E_AS rating allows safe clamp capacitor discharge into drain without external snubber, simplifying magnetics design.

Industrial SMPS

Motor Drive Half-Bridge Stages

Use Scenario: 24–48 V input industrial AC/DC front-end with PFC + LLC secondary stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter.

Use Value: Fast body diode (t_rr ≤ 190 ns) and low V_SD (1.3 V) minimize conduction loss during dead-time conduction.

Use Scenario: 24 V BLDC motor driver with integrated gate drivers and current sensing.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving 10 A peak phase current.

Use Value: R_DS(on) = 0.125 Ω limits I²R loss to <1.3 W at 10 A, enabling compact thermal design without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF15	R_DS(on) = 0.14 Ω, Q_g = 32 nC, no published C_oss,eff data	Higher conduction loss; less predictable soft-switching behavior due to uncharacterized C_oss curve	Preferable only if STMicroelectronics supply chain alignment is required and thermal margin ≥15°C exists.
IXTP18N15X4	R_DS(on) = 0.115 Ω, Q_g = 24 nC, E_AS = 140 mJ	Lower gate charge improves switching efficiency but reduced avalanche capability limits clamp reliability	Use where gate drive strength is constrained and inductive stress is actively limited via control loop.

Compared with STP18NF15 and IXTP18N15X4, IRFR18N15DTRRP uniquely balances low R_DS(on), fully specified C_oss,eff, and industry-leading 200 mJ avalanche rating-making it optimal for unclamped inductive switching in telecom and industrial SMPS where reliability trumps marginal efficiency gains.

Availability

IRFR18N15DTRRP is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free assembly.

Supply support for IRFR18N15DTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the former International Rectifier HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom and industrial infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR18N15DTRRP supports 13 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual PCB copper area and ambient airflow in the target application.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 6.8 Ω, per datasheet test condition) is required to dampen ringing and control dV/dt during switching transitions. Without it, parasitic inductance in the gate loop may cause oscillation, false triggering, or accelerated gate oxide degradation under high di/dt conditions.

Can IRFR18N15DTRRP be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.17 V/°C) enables inherent current sharing when paralleled. However, matched gate drive layout, symmetrical source inductance, and thermal coupling between devices are mandatory to prevent current imbalance and localized overheating.

Is the body diode suitable for synchronous rectification?

The integrated body diode has t_rr = 130–190 ns and V_SD = 1.3 V at 11 A, making it usable for synchronous rectification in medium-frequency (<300 kHz) topologies. For higher frequencies or lower loss, an external Schottky diode or dedicated SR controller is recommended.

IRFR18N15DTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR18N15DTRRP FAQ

1.How can I place an order for IRFR18N15DTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR18N15DTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR18N15DTRRP reliable?

The price and inventory of IRFR18N15DTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR18N15DTRRP is usually 5 days.

3.What payment methods are accepted for IRFR18N15DTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR18N15DTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR18N15DTRRP?

IRFR18N15DTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR18N15DTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR18N15DTRRP?

For technical support, including IRFR18N15DTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR18N15DTRRP requirements.

6.How does Aetrix verify that IRFR18N15DTRRP is sourced from the original manufacturer or authorized distributors?

All IRFR18N15DTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR18N15DTRRP meets industry standards.

7.What is the process for return or replacement of IRFR18N15DTRRP?

All IRFR18N15DTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFR18N15DTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR18N15DTRRP part is unused and in its original packaging.

Return procedure for IRFR18N15DTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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