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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR220NCPBF

Name: IRFR220NCPBF
Brand: Infineon Technologies
SKU: IRFR220NCPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR220NCPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR220NCPBF.pdf

Description:: MOSFET N-CH 200V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR220NCPBF from Infineon Technologies is a 200V, 5.0A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It features 600 mΩ R_DS(on) at V_GS = 10 V, 15 nC total gate charge, and fully characterized C_oss (46 pF effective) to simplify snubberless flyback and forward converter design in telecom 48V input systems.

For engineers reviewing the IRFR220NCPBF datasheet, IRFR220NCPBF pinout, IRFR220NCPBF application, or IRFR220NCPBF equivalent, key selection criteria include avalanche energy rating (46 mJ single-pulse), diode reverse recovery (90–140 ns), gate threshold voltage (2.0–4.0 V), and thermal resistance (3.5 °C/W junction-to-case).

Technical Context

This HEXFET® device uses planar vertical DMOS technology with integrated body diode, enabling unclamped inductive switching and controlled dv/dt recovery (7.5 V/ns peak). Its low Q_gd/Q_g ratio (6.1/15 nC typical) supports efficient zero-voltage switching in resonant topologies.

The MOSFET operates across –55°C to +175°C junction temperature range, with specified R_DS(on) temperature coefficient (0.23 V/°C) and normalized on-resistance curve up to 175°C. Avalanche capability is validated per JEDEC JESD24-11, with I_AR = 2.9 A and E_AR = 4.3 mJ repetitive rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 48V-input forward converter primary-side voltage spikes up to 160V with margin.
R_DS(on) max	600 mΩ @ V_GS = 10 V - Delivers ≤1.7 W conduction loss at 5.0 A DC, suitable for thermally constrained PCB-mount designs.
Q_g typ	15 nC - Enables <100 ns turn-on with 24 Ω gate resistor, reducing switching loss in 300–500 kHz SMPS.
C_{oss eff}	46 pF - Supports accurate soft-switching timing prediction in LLC and active-clamp forward converters.
E_AS	46 mJ - Sustains single-pulse inductive energy without failure during overload or startup in isolated DC-DC.
dv/dt peak	7.5 V/ns - Limits false turn-on risk in high-dv/dt environments when paired with appropriate gate drive impedance.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal conduction; 3.5 °C/W junction-to-case thermal resistance enables 43 W continuous dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level drive; threshold 2.0–4.0 V ensures compatibility with standard PWM controllers.
2 - Drain	High-side switch node	Connected to PCB copper pour for heat sinking; pins 2 and 4 are internally tied to same drain metallization.
3 - Source	Return path / reference	Serves as local ground for gate driver; low-inductance layout critical for stable switching.
4 - Drain	Drain extension	Second drain terminal for enhanced current sharing and reduced package inductance in high-di/dt operation.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.41 typical (6.1/15 nC) - Reduces Miller-induced switching delay and improves controllability in hard-switched topologies.
Fully characterized C_oss	46 pF effective (0–160 V sweep) - Enables precise snubberless design and accurate dead-time optimization.
Avalanche-rated	46 mJ single-pulse, 4.3 mJ repetitive - Eliminates need for external clamping in flyback and forward converter primary switches.
Fast body diode	t_rr = 90–140 ns, Q_rr = 320–480 nC - Minimizes reverse recovery loss in synchronous rectifier or freewheeling roles.

Applications

Telecom 48V Forward Converter

Industrial DC-DC Isolated Supply

Use Scenario: Primary-side switch in 48V-input, 12V-output forward converter operating at 250–500 kHz.

IC Role / Device Role / Timing Role: High-side N-channel power switch controlling transformer primary current; requires fast turn-off to prevent core saturation.

Use Value: 15 nC Q_g and 6.4 ns t_d(on) enable clean 300 ns minimum off-time, supporting duty cycle stability under load transients.

Use Scenario: Main switch in 24–48V industrial DC-DC module powering PLC I/O and fieldbus interfaces.

IC Role / Device Role / Timing Role: Isolated primary switch handling 5 A continuous current with 175°C junction rating for extended thermal margin.

Use Value: 3.5 °C/W R_θJC allows direct heatsink mounting on metal-core PCB, eliminating discrete thermal interface materials.

LED Driver Flyback Primary

Motor Control H-Bridge Low-Side

Use Scenario: Primary switch in constant-current LED driver for street lighting, operating in discontinuous conduction mode.

IC Role / Device Role / Timing Role: Energy-transfer switch cycling at 65–130 kHz; must withstand reflected output voltage plus leakage spike.

Use Value: 200 V V_DSS and 46 mJ E_AS absorb leakage energy without snubber, simplifying BOM and improving reliability.

Use Scenario: Low-side switch in 24V brushed DC motor control H-bridge driving 3–5 A stall current.

IC Role / Device Role / Timing Role: Fast-switching current sink with body diode conducting flyback current during PWM off-time.

Use Value: 90–140 ns t_rr and 1.3 V V_SD minimize conduction loss and voltage overshoot during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF20	200 V, 16 A, 150 mΩ R_DS(on), TO-220 package	Higher current rating but larger footprint and higher thermal resistance (62 °C/W R_θJA)	Preferred for higher-power, lower-frequency (<100 kHz) designs where board space permits through-hole mounting.
IRL2203NPBF	30 V, 116 A, 3.3 mΩ R_DS(on), logic-level, D-Pak	Lower voltage rating limits use to 12–24V systems; unsuitable for 48V+ input topologies.	Select only for low-voltage, high-current synchronous rectification or battery-fed motor drives.

Compared with STP16NF20 and IRL2203NPBF, IRFR220NCPBF uniquely balances 200 V rating, D-Pak thermal performance, and mid-range gate charge for compact, high-frequency telecom and industrial DC-DC converters requiring robust avalanche tolerance.

Availability

IRFR220NCPBF is available at Aetrix Electronics and suitable for telecom 48V forward converters, industrial isolated DC-DC supplies, and LED driver flyback primaries requiring stable component supply and long-term production continuity.

Supply support for IRFR220NCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability switching applications in SMPS, motor drives, and lighting, with emphasis on ruggedness, low switching loss, and thermal performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR220NCPBF supports 3.5 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be verified against actual PCB copper area and airflow conditions.

Does this MOSFET require a gate resistor for stable operation?

Yes - a 24 Ω gate resistor is used in the datasheet's switching time test circuit to limit peak gate current and damp ringing. For 300–500 kHz operation, values between 10 Ω and 47 Ω balance switching speed and EMI; lower values increase dv/dt stress and risk of parasitic turn-on.

Can IRFR220NCPBF replace IRFU220N in existing designs?

Yes - both share identical electrical specifications, thermal ratings, and D-Pak (IRFR) / I-Pak (IRFU) mechanical outlines with compatible pin assignments. The IRFR220NCPBF offers identical performance with updated packaging and RoHS compliance; no layout or firmware changes are required.

Is the body diode suitable for synchronous rectification?

No - while the body diode has fast t_rr (90–140 ns) and low V_SD (1.3 V), its Q_rr (320–480 nC) is too high for efficient synchronous rectification above ~100 kHz. Dedicated low-Q_rr Schottky or MOSFETs with optimized body diodes are recommended for that role.

IRFR220NCPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR220NCPBF FAQ

1.How can I place an order for IRFR220NCPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR220NCPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR220NCPBF reliable?

The price and inventory of IRFR220NCPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NCPBF is usually 5 days.

3.What payment methods are accepted for IRFR220NCPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NCPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR220NCPBF?

IRFR220NCPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR220NCPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR220NCPBF?

For technical support, including IRFR220NCPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NCPBF requirements.

6.How does Aetrix verify that IRFR220NCPBF is sourced from the original manufacturer or authorized distributors?

All IRFR220NCPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NCPBF meets industry standards.

7.What is the process for return or replacement of IRFR220NCPBF?

All IRFR220NCPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NCPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR220NCPBF part is unused and in its original packaging.

Return procedure for IRFR220NCPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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