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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR220NPBF

Name: IRFR220NPBF
Brand: Infineon Technologies
SKU: IRFR220NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR220NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR220NPBF.pdf

Description:: MOSFET N-CH 200V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR220NPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 5.0A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency DC-DC converters and forward topologies with 600 mΩ R_DS(on) at V_GS = 10V, 15 nC total gate charge, and 46 mJ single-pulse avalanche energy - deployed in 48V telecom power supplies.

For engineers reviewing the IRFR220NPBF datasheet, IRFR220NPBF pinout, IRFR220NPBF application, or IRFR220NPBF equivalent, key selection criteria include its low Q_gd/Q_g ratio for reduced switching loss, fully characterized C_oss,eff = 46 pF for resonant design, and validated avalanche ruggedness under unclamped inductive switching.

Technical Context

This MOSFET employs planar vertical DMOS structure with integrated body diode, supporting hard-switched and resonant SMPS topologies. Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3V/5V controllers when biased above V_GS(th), while R_DS(on) drift of +0.23 V/°C ensures predictable conduction loss across –55°C to +175°C junction range.

Dynamic parameters are fully characterized: C_iss = 300 pF, C_oss = 53 pF (V_DS = 25V), and C_rss = 15 pF at 1 MHz; reverse recovery time (t_rr) = 90–140 ns with Q_rr = 320–480 nC confirms suitability for synchronous rectification and freewheeling roles where diode speed impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; supports 48V input forward converters with ≥4× safety margin.
R_DS(on) max	600 mΩ @ V_GS = 10V, I_D = 2.9A - Defines worst-case conduction loss (P_cond ≈ I² × 0.6 Ω) at rated current.
Q_g typ	15 nC - Total gate charge determines driver strength requirement; enables <100 ns turn-on with 150 mA gate current.
E_AS	46 mJ - Single-pulse avalanche energy rating validates robustness during overvoltage transients in unclamped inductive loads.
C_oss,eff	46 pF - Effective output capacitance measured from 0–160V; used directly in LLC/ZVS dead-time and resonant frequency calculations.
t_rr	90–140 ns - Body diode reverse recovery time; critical for minimizing shoot-through risk in half-bridge configurations.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal relief; 3-terminal configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Receives gate drive signal; requires ≤±20 V absolute rating; Miller capacitance (Q_gd = 6.1–9.2 nC) dominates switching transitions.
D	High-side current path	Connected to drain node (e.g., transformer primary or bus rail); electrically tied to exposed copper pad for thermal conduction to PCB.
S	Reference and return path	Source terminal forms common reference for gate drive and current sensing; body diode anode is internally connected here.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	≈41% (6.1/15 nC) - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments.
Fully characterized C_oss vs. V_DS	C_oss = 23 pF @ 160V - Enables accurate soft-switching timing prediction without iterative measurement.
Avalanche-rated operation	I_AR = 2.9 A, E_AR = 4.3 mJ - Supports repetitive inductive turn-off stress in flyback and active clamp circuits.
Lead-free construction	RoHS-compliant, Pb-free terminations - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard SMT reflow.

Applications

Telecom 48V Forward Converter

Industrial DC-DC Brick

Use Scenario: Primary-side switch in isolated 48V-to-12V forward converter operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side switching element controlling transformer primary current; duty cycle modulated by PWM controller.

Use Value: Low Q_g and C_oss,eff minimize switching loss at high frequency; 200V rating accommodates reflected voltage spikes up to 180V.

Use Scenario: Secondary-side synchronous rectifier in 24V-input industrial DC-DC module with tight thermal constraints.

IC Role / Device Role / Timing Role: Low-side freewheeling switch replacing Schottky diode; driven complementary to primary switch.

Use Value: Fast t_rr and low V_SD (1.3 V) reduce conduction and recovery losses; D-Pak package enables 3.5°C/W junction-to-case thermal resistance.

UPS Hold-up Circuit

LED Driver Flyback

Use Scenario: Output OR-ing switch in redundant 48V UPS system maintaining load continuity during battery switchover.

IC Role / Device Role / Timing Role: Ideal diode replacement with controlled turn-on/turn-off; operated in linear region during transition.

Use Value: Avalanche ruggedness (E_AS = 46 mJ) withstands inductive kickback from hold-up capacitors; R_DS(on) ensures <0.3 W dissipation at 5 A.

Use Scenario: Primary switch in isolated 120VAC-fed LED driver flyback supplying constant current to high-brightness LEDs.

IC Role / Device Role / Timing Role: Main energy transfer switch; subjected to 600V+ drain spikes due to leakage inductance.

Use Value: 200V V_DSS provides margin against 1.5× reflected spike; validated avalanche performance prevents failure during no-load or short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200V, 20A, R_DS(on) = 100 mΩ, Q_g = 25 nC - higher current, lower R_DS(on), but larger gate charge.	Better for higher-current, lower-frequency designs (>10 A, <100 kHz); less suitable for high-frequency optimization.	Select when conduction loss dominates and board space allows TO-220 mounting.
IXTP20N20P	200V, 20A, R_DS(on) = 120 mΩ, Q_g = 22 nC, TO-220FP package - higher thermal resistance (R_θJC = 2.5°C/W vs. 3.5°C/W).	Preferred for through-hole prototyping or legacy layouts; lacks D-Pak's automated assembly compatibility.	Choose for manual assembly or thermal testing where heatsink attachment is required.

Compared with STP20NM20 and IXTP20N20P, IRFR220NPBF offers optimal balance of gate charge, thermal footprint, and avalanche capability for compact, high-frequency SMPS - especially where D-Pak mounting and MSL1 reflow compliance are mandatory.

Availability

IRFR220NPBF is available at Aetrix Electronics and suitable for telecom 48V forward converters, industrial DC-DC bricks, and LED driver flyback circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR220NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015, integrating its high-performance power MOSFET portfolio into Infineon's broader power semiconductor ecosystem.

This device belongs to the HEXFET® family - engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low gate charge, rugged avalanche behavior, and precise capacitance characterization are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR220NPBF supports 3.5 A continuous drain current at T_C = 100°C with V_GS = 10V, derated from 5.0 A at 25°C using the specified linear derating factor of 0.71 W/°C and R_θJC = 3.5°C/W. This reflects real-world thermal limits in enclosed power modules.

Does this MOSFET have a fully characterized body diode for synchronous rectification?

Yes - diode parameters are fully specified: V_SD = 1.3 V at I_S = 2.9A and T_J = 25°C, t_rr = 90–140 ns, Q_rr = 320–480 nC, and I_AR = 2.9 A. These values are measured under standardized conditions (di/dt = 100 A/µs) and validated in Application Note AN-1001.

Can IRFR220NPBF be driven directly from a 3.3V microcontroller GPIO?

No - its gate threshold voltage range is 2.0–4.0 V, and full enhancement requires ≥10 V for guaranteed R_DS(on) ≤ 600 mΩ. A 3.3V signal may partially turn on the device, causing excessive heating; a dedicated gate driver (e.g., TC4420) or level-shifting circuit is required for reliable switching.

Is the D-Pak package lead-free and RoHS compliant?

Yes - the "PbF" suffix confirms lead-free terminations per RoHS Directive 2011/65/EU. The device meets IPC-J-STD-020 MSL1 classification, allowing standard reflow profiles without pre-baking, and features matte tin plating on all external terminals.

IRFR220NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR220NPBF FAQ

1.How can I place an order for IRFR220NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR220NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR220NPBF reliable?

The price and inventory of IRFR220NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NPBF is usually 5 days.

3.What payment methods are accepted for IRFR220NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR220NPBF?

IRFR220NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR220NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR220NPBF?

For technical support, including IRFR220NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NPBF requirements.

6.How does Aetrix verify that IRFR220NPBF is sourced from the original manufacturer or authorized distributors?

All IRFR220NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NPBF meets industry standards.

7.What is the process for return or replacement of IRFR220NPBF?

All IRFR220NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR220NPBF part is unused and in its original packaging.

Return procedure for IRFR220NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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