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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR220NTR

Name: IRFR220NTR
Brand: Infineon Technologies
SKU: IRFR220NTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR220NTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR220NTR.pdf

Description:: MOSFET N-CH 200V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,174

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Product details

Overview

IRFR220NTR from Infineon Technologies is a 200V, 5.0A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It features 600 mΩ R_DS(on) at V_GS = 10 V, 15 nC typical total gate charge, and 46 mJ single-pulse avalanche energy - enabling robust operation in telecom 48V forward converters.

For engineers reviewing the IRFR220NTR datasheet, IRFR220NTR pinout, IRFR220NTR application, or IRFR220NTR equivalent, key selection criteria include its low Q_gd/Q_g ratio (≈41%), fully characterized C_oss,eff = 46 pF, and validated 7.5 V/ns diode recovery dv/dt rating - critical for snubberless hard-switching topologies.

Technical Context

This HEXFET® device uses planar vertical DMOS structure with optimized charge balance for fast switching and rugged unclamped inductive switching (UIS). Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, while the body diode exhibits t_rr = 90–140 ns and Q_rr = 320–480 nC under 100 A/µs di/dt.

The MOSFET's thermal design is defined by R_θJC = 3.5 °C/W and R_θJA = 50 °C/W (PCB mount), with SOA limited by R_DS(on) at high V_DS and pulse width < 10 ms. Avalanche capability is rated to 2.9 A I_AR and 4.3 mJ E_AR under repetitive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands up to 200 V drain-source blocking voltage before breakdown.
R_DS(on) max	600 mΩ @ V_GS = 10 V, I_D = 2.9 A - Determines conduction loss and junction temperature rise under load.
Q_g typ	15 nC - Directly impacts gate driver power requirement and turn-on speed in PWM circuits.
C_oss,eff	46 pF - Effective output capacitance over full 0–160 V V_DS swing; used to calculate resonant tank losses in ZVS designs.
E_AS	46 mJ - Single-pulse avalanche energy rating; enables reliable operation during transient overvoltage events.
t_r/t_f	11 ns / 12 ns @ I_D = 2.9 A, R_G = 24 Ω - Defines minimum practical switching period and EMI generation profile.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (internally connected to Pin 2 and thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level signal to modulate channel conductivity; requires ≤2.4 nC Q_gs for full turn-on.
2 & 4 (Drain)	High-side current path	Connected to both top-side lead and thermal pad; carries full load current and dissipates heat into PCB copper.
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be low-inductance for stable switching.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	≈41% (6.1/15 nC) - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments.
Characterized C_oss,eff	46 pF over 0–160 V - Enables accurate prediction of turn-off loss and snubber sizing without iterative testing.
Avalanche-rated	46 mJ single-pulse, 4.3 mJ repetitive - Eliminates need for external clamping in flyback or forward converter primary switches.
Fast body diode	t_rr = 90 ns, Q_rr = 320 nC - Supports synchronous rectification and reduces reverse recovery loss in half-bridge configurations.

Applications

Telecom 48V Forward Converter

Industrial DC-DC Brick

Use Scenario: Primary-side switch in isolated 48V input, 12V/24V output forward converter operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer via transformer; handles 5 A continuous and 20 A pulsed drain current.

Use Value: Low Q_g and C_oss,eff minimize switching loss at high frequency, while 200 V rating provides margin against reflected transients.

Use Scenario: Input-stage switch in compact 100 W industrial DC-DC module with wide input range (36–75 V).

IC Role / Device Role / Timing Role: Hard-switched primary FET in active-clamp forward topology; operates with 100 ns dead-time constraints.

Use Value: Validated 7.5 V/ns diode recovery dv/dt ensures stable commutation without spurious turn-on during high di/dt transitions.

Server PSU ORing FET

LED Driver Flyback Switch

Use Scenario: ORing MOSFET in redundant 12 V server power supply backplane, replacing ideal diodes.

IC Role / Device Role / Timing Role: Low-side source-follower configured as reverse-polarity protection and current-sharing element.

Use Value: R_DS(on) = 600 mΩ ensures <150 mV conduction drop at 2.5 A, minimizing heat generation in confined airflow zones.

Use Scenario: Primary switch in isolated 230 VAC-input LED driver flyback converter delivering 36 V/1.5 A output.

IC Role / Device Role / Timing Role: Energy-storage switch cycling at 65 kHz; subjected to 1.2 kV reflected spikes and 2.9 A avalanche stress.

Use Value: 46 mJ E_AS rating allows safe absorption of leakage inductance energy without external snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, R_DS(on) = 100 mΩ, Q_g = 25 nC - higher current, lower R_DS(on), but larger gate charge.	Better suited for higher-power forward converters (>150 W); less optimal for space-constrained 5 A designs.	Select when board layout allows larger TO-220 footprint and thermal mass supports higher I_D.
IRL220NTRPBF	200 V, 5.0 A, R_DS(on) = 600 mΩ, Q_g = 16 nC - logic-level (V_GS(th) = 1.0–2.5 V), same package.	Enables direct microcontroller drive without level-shifting; slightly higher Q_g increases gate loss.	Choose for 3.3 V/5 V control systems where gate driver ICs are omitted.

Compared with STP20NM20 and IRL220NTRPBF, IRFR220NTR offers the best balance of thermal efficiency (R_θJC = 3.5 °C/W), compact D-Pak footprint, and proven UIS ruggedness - making it preferred for cost-sensitive, medium-power telecom and industrial SMPS where layout area and reliability are prioritized over peak current headroom.

Availability

IRFR220NTR is available at Aetrix Electronics and suitable for telecom 48V forward converters, industrial DC-DC bricks, and LED driver flyback switches requiring stable component supply and long-term production continuity.

Supply support for IRFR220NTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability switching applications in SMPS, motor drives, and lighting - with emphasis on ruggedness, predictable dynamic parameters, and thermal performance in real-world PCB layouts.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR220NTR supports 3.5 A continuous drain current at T_C = 100°C with V_GS = 10 V. This derating reflects thermal limits of the D-Pak package and must be verified using R_θJC = 3.5 °C/W and ambient layout conditions - not ambient temperature alone.

Does this MOSFET require a gate resistor for stability?

Yes - a 10–24 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd and C_iss. The datasheet specifies switching times (e.g., t_r = 11 ns) measured with R_G = 24 Ω, confirming its role in controlling dv/dt and EMI.

Can IRFR220NTR replace IRFR120 in existing designs?

No - IRFR120 is a 100 V, 8.4 A device with different R_DS(on) (220 mΩ) and gate charge (12 nC). Substituting IRFR220NTR (200 V, 5 A, 600 mΩ) risks excessive conduction loss and insufficient voltage margin in 100 V circuits, despite identical D-Pak packaging.

Is the body diode suitable for synchronous rectification?

It is usable but suboptimal: t_rr = 90–140 ns and Q_rr = 320–480 nC exceed dedicated synchronous rectifier MOSFETs. For >100 kHz operation, a dedicated low-Q_rr FET (e.g., IRF7832) is preferred - though IRFR220NTR remains viable in lower-frequency or cost-driven implementations.

IRFR220NTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR220NTR FAQ

1.How can I place an order for IRFR220NTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR220NTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR220NTR reliable?

The price and inventory of IRFR220NTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NTR is usually 5 days.

3.What payment methods are accepted for IRFR220NTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR220NTR?

IRFR220NTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR220NTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR220NTR?

For technical support, including IRFR220NTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NTR requirements.

6.How does Aetrix verify that IRFR220NTR is sourced from the original manufacturer or authorized distributors?

All IRFR220NTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NTR meets industry standards.

7.What is the process for return or replacement of IRFR220NTR?

All IRFR220NTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR220NTR part is unused and in its original packaging.

Return procedure for IRFR220NTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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