Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFR220NTRL

Part No.:
IRFR220NTRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR220NTRL.pdf
Description:
MOSFET N-CH 200V 5A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,932

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR220NTRL from Infineon Technologies is a 200V, 5.0A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, featuring 600 mΩ RDS(on) at VGS = 10V, 15 nC total gate charge, and optimized for high-frequency DC-DC converters in telecom 48V forward topologies.

For engineers reviewing the IRFR220NTRL datasheet, IRFR220NTRL pinout, IRFR220NTRL application, or IRFR220NTRL equivalent, key selection criteria include avalanche energy rating (46 mJ), effective output capacitance (46 pF), diode reverse recovery charge (320–480 nC), and thermal resistance (RθJC = 3.5 °C/W).

Technical Context

This HEXFET® device uses planar vertical DMOS technology with fully characterized Coss, Ciss, and Crss to support accurate snubberless design in hard-switched SMPS. Its low Qgd/Qg ratio (6.1/15 nC) reduces Miller-induced switching instability.

The integrated body diode exhibits 90–140 ns trr and 320–480 nC Qrr under 100 A/µs di/dt, enabling reliable synchronous rectification in continuous conduction mode (CCM) forward converters without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200 V - supports 48V input telecom systems with ≥4× safety margin against transient overvoltage
RDS(on) max600 mΩ @ VGS = 10V - determines conduction loss of 17.4 W at 5.0A ID, limiting thermal rise in PCB-mount applications
Qg15 nC typ - defines minimum gate drive power required for 500 kHz switching (e.g., 75 µW at 5V drive)
EAS46 mJ single-pulse - enables unclamped inductive switching survival in flyback or forward converter primary-side operation
Coss,eff46 pF - sets resonant tank behavior during zero-voltage switching transitions, critical for soft-start and EMI control
RθJC3.5 °C/W - allows 12.3°C junction rise above case at 43 W dissipation, defining heatsink interface requirements
trr / Qrr90–140 ns / 320–480 nC - constrains maximum operating frequency in CCM forward designs due to diode recovery losses

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; surface-mount footprint compatible with standard reflow profiles (300°C peak, 10 s).

Pin/TerminalCircuit RoleDesign Meaning
1 - GateControl electrodeReceives 10V logic-level drive; requires <2.4 nC Qgs for fast turn-on and minimal Miller plateau duration
2 - DrainMain current path (high-side switch node)Connected to exposed copper pad; carries full load current and must be routed with low-inductance layout to suppress dv/dt-induced false turn-on
3 - SourceReference node for gate drive and current sensingServes as return path for both MOSFET channel and body diode; forms common reference for gate driver IC ground
4 - Drain (tab)Thermal & electrical extension of DrainProvides primary heat transfer path to PCB copper; electrically identical to Pin 2, requiring isolation from other nets except drain rail

Key Features

FeatureDesign Value
Low Qgd/Qg ratio0.41 (6.1/15 nC) - minimizes sensitivity to drain voltage transients during switching, improving noise immunity in high-dv/dt environments
Fully characterized Coss23 pF @ VDS = 160V - enables precise calculation of turn-off energy loss (Eoff ≈ ½ × Coss × VDS²)
Specified avalanche capability46 mJ single-pulse - permits safe operation during output short-circuit or transformer saturation events without external clamping
Body diode Qrr data320–480 nC - allows accurate estimation of reverse recovery loss in synchronous rectifier or freewheeling configurations
Normalized RDS(on) vs. TJ3.5× increase from 25°C to 175°C - informs derating curves for thermal design and worst-case conduction loss analysis

Applications

Telecom Forward ConverterIndustrial DC-DC Module

Use Scenario: 48V input, 12V/5A isolated forward converter in base station power supply.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET operating at 250–500 kHz with fixed duty cycle and active clamp reset.

Use Value: Low Qg and Coss,eff reduce switching loss by 22% versus legacy 1Ω MOSFETs, enabling >92% efficiency at full load.

Use Scenario: 24V-to-5V non-isolated buck converter in programmable logic controller (PLC) I/O module.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in continuous conduction mode with 300 kHz PWM.

Use Value: Specified trr and Qrr allow accurate loss modeling, reducing thermal margin uncertainty by ±15°C in sealed enclosure designs.

LED Driver Power StageMotor Control H-Bridge Leg

Use Scenario: Constant-current LED driver for street lighting using 300V bus with buck-boost topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 200V transients during inductor current reversal.

Use Value: 200V VDSS and 46 mJ EAS eliminate need for external TVS, simplifying BOM and board layout.

Use Scenario: 24V BLDC motor gate driver half-bridge leg in HVAC fan control.

IC Role / Device Role / Timing Role: Low-side switch with body diode conducting commutation current during PWM off-time.

Use Value: Verified 90–140 ns trr ensures predictable dead-time requirements, preventing shoot-through in 20 kHz PWM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2NK20Z200V, 2.2A, RDS(on) = 1.2 Ω, no published Qrr or Coss,effLimited to lower-current (<3A), lower-frequency (<100 kHz) applications due to higher on-resistance and missing dynamic parametersSelect only when cost is primary constraint and switching loss is secondary; verify avalanche robustness via test
IXTP20N20P200V, 20A, RDS(on) = 120 mΩ, TO-220 package, higher Qg (42 nC)Requires larger PCB area and heatsink; better suited for high-current linear-regulator replacement than high-frequency SMPSChoose for higher current density needs where thermal mass outweighs switching speed; not drop-in for D-Pak footprint

Compared with STP2NK20Z and IXTP20N20P, IRFR220NTRL uniquely balances 5A current rating, D-Pak thermal performance, and fully specified dynamic parameters-making it optimal for space-constrained, high-frequency telecom and industrial DC-DC designs where parameter certainty drives reliability.

Availability

IRFR220NTRL is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, and LED driver power stages requiring stable component supply and verified avalanche performance.

Supply support for IRFR220NTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability switching applications in telecom infrastructure, server PSUs, and industrial power conversion-emphasizing fully characterized dynamic parameters and rugged avalanche capability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR220NTRL supports 3.5 A continuous drain current at TC = 100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 5.0 A rating at 25°C, governed by the 0.71 W/°C linear derating factor and 43 W power dissipation limit.

Does the body diode support synchronous rectification in CCM operation?

Yes-the body diode is fully characterized with trr = 90–140 ns and Qrr = 320–480 nC at TJ = 25°C and di/dt = 100 A/µs. These values enable accurate loss modeling for synchronous rectification in CCM forward or buck converters up to 300 kHz, provided gate timing accounts for recovery delay.

Is IRFR220NTRL suitable for logic-level gate drive (e.g., 5V microcontroller output)?

No-its gate threshold voltage is 2.0–4.0 V, but RDS(on) is specified only at VGS = 10V (600 mΩ). At 5V, RDS(on) rises significantly (typical >1.8 Ω), increasing conduction loss by >3×. A dedicated gate driver or level-shifter is required for reliable 10V switching.

How is the effective output capacitance (Coss,eff) measured and why does it matter?

Coss,eff = 46 pF is measured across VDS = 0–160V with VGS = 0V and represents energy-equivalent capacitance for turn-off loss calculation. It matters because it directly determines Eoff = ½ × Coss,eff × VDS², enabling accurate prediction of switching loss in hard-switched topologies without iterative simulation.

IRFR220NTRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR220NTRL FAQ

1.How can I place an order for IRFR220NTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR220NTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR220NTRL reliable?

The price and inventory of IRFR220NTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NTRL is usually 5 days.

3.What payment methods are accepted for IRFR220NTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR220NTRL?

IRFR220NTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR220NTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR220NTRL?

For technical support, including IRFR220NTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NTRL requirements.

6.How does Aetrix verify that IRFR220NTRL is sourced from the original manufacturer or authorized distributors?

All IRFR220NTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NTRL meets industry standards.

7.What is the process for return or replacement of IRFR220NTRL?

All IRFR220NTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR220NTRL part is unused and in its original packaging.

Return procedure for IRFR220NTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR220NTRL Tags

  • IRFR220NTRL
  • IRFR220NTRL PDF
  • IRFR220NTRL Datasheet
  • IRFR220NTRL Specifications
  • IRFR220NTRL Images
  • Infineon Technologies
  • Infineon Technologies IRFR220NTRL
  • Buy IRFR220NTRL
  • IRFR220NTRL Price
  • IRFR220NTRL Distributor
  • IRFR220NTRL Supplier
  • IRFR220NTRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER