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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR220NTRLPBF

Name: IRFR220NTRLPBF
Brand: Infineon Technologies
SKU: IRFR220NTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR220NTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR220NTRLPBF.pdf

Description:: MOSFET N-CH 200V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,682

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Product details

Overview

IRFR220NTRLPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 5.0A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and forward topologies with 600 mΩ R_DS(on) at V_GS = 10V, 15 nC total gate charge, and 46 mJ single-pulse avalanche energy. It serves as a primary-side switching device in 48V telecom SMPS.

For engineers reviewing the IRFR220NTRLPBF datasheet, IRFR220NTRLPBF pinout, IRFR220NTRLPBF application, or IRFR220NTRLPBF equivalent, key selection criteria include its low Q_gd/Q_g ratio (≈41%), fully characterized C_oss,eff (46 pF), avalanche-rated operation, and lead-free D-Pak thermal performance (R_θJC = 3.5°C/W).

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to achieve stable R_DS(on) over temperature (0.23 V/°C dV_BR/dT_J) and controlled Miller charge (6.1 nC typical). Its body diode exhibits 90–140 ns t_rr and 320–480 nC Q_rr under 100 A/µs di/dt, enabling hard-switched flyback and forward converter operation without external snubbing in many cases.

The MOSFET supports unclamped inductive switching up to 2.9A I_AS and 46 mJ E_AS, with SOA limited by R_DS(on) at high V_DS and pulse-width-dependent thermal constraints. Gate threshold voltage (2.0–4.0 V) ensures TTL/CMOS driver compatibility while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 48V input-derived transient spikes up to 160V in forward converters without breakdown.
R_DS(on) max	600 mΩ @ V_GS = 10V, I_D = 2.9A - Enables ≤1.7W conduction loss at 5A DC, suitable for thermally constrained PCB-mount designs.
Q_g typ	15 nC - Reduces gate drive power and enables >500 kHz switching in isolated DC-DC stages with standard 1A drivers.
C_oss,eff	46 pF - Predictable output capacitance across 0–160V simplifies resonant timing and ZVS design in LLC or phase-shifted full-bridge.
E_AS	46 mJ - Supports robust operation during output short-circuit or transformer saturation events without failure.
R_θJC	3.5 °C/W - Allows 43 W continuous dissipation with minimal heatsink when mounted on ≥1 sq-in 2-oz copper.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (Drain, Gate, Source) with G-S-D pin order viewed from top (marking side).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to board.
Gate	Control electrode	High-impedance input requiring <2.4 nC Qgs for turn-on; sensitive to ringing-requires local RC snubber if driven >100 kHz.
Source	Reference node	Return path for load current and gate drive loop; must be low-inductance connection to minimize V_GS disturbance during switching.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	41% typical - Reduces Miller-induced shoot-through risk and improves controllability in synchronous rectification.
Fully characterized C_oss vs. V_DS	300 pF @ 1V → 23 pF @ 160V - Enables accurate dead-time calculation and soft-switching point prediction.
Avalanche-rated	2.9A I_AS, 46 mJ E_AS - Eliminates need for external clamping in cost-sensitive telecom power supplies.
Lead-free & RoHS-compliant	"PbF" suffix confirmed - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard SMT reflow.

Applications

Telecom 48V Forward Converter

Industrial DC-DC Brick

Use Scenario: Primary-side switch in 48V-input, 12V-output forward converter operating at 250–500 kHz.

IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer via transformer; requires fast turn-off (20 ns td(off)) and low Q_gd to minimize cross-conduction.

Use Value: 600 mΩ R_DS(on) limits conduction loss to <1.8W at 5A, while 46 mJ E_AS handles reset winding voltage overshoot without snubber.

Use Scenario: Main switch in compact 100W industrial DC-DC module with forced-air cooling.

IC Role / Device Role / Timing Role: Power stage transistor in half-bridge topology; relies on 3.5°C/W R_θJC for direct PCB thermal coupling.

Use Value: D-Pak footprint allows high-current routing on 2-layer board; 15 nC Q_g enables efficient gate drive with integrated controller's 1A peak output.

LED Driver Power Stage

Server PSU Hold-Up Circuit

Use Scenario: Switching element in constant-current LED driver with 36–60V input range.

IC Role / Device Role / Timing Role: PWM-controlled current regulator; body diode conducts during off-time with 1.3V V_SD drop at 2.9A.

Use Value: 90–140 ns t_rr minimizes diode recovery loss; 320 nC Q_rr reduces switching stress compared to standard FRDs.

Use Scenario: Backup switch in server PSU hold-up circuit that sustains 12V rail during AC dropout.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-reliability switch activated only during brownout; rated for 175°C junction operation.

Use Value: -55°C to +175°C T_J rating ensures functionality during extended thermal stress; 200V V_DSS accommodates 12V rail transients up to 160V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200V, 20A, 0.13Ω R_DS(on), TO-220 package	Higher current rating but larger footprint and higher gate charge (45 nC)	Preferred for higher-power, lower-frequency (<100 kHz) designs where thermal mass outweighs switching loss concerns.
IXTP20N20P	200V, 20A, 0.12Ω R_DS(on), TO-220FP package, 42 nC Q_g	Enhanced avalanche rating (120 mJ), but no C_oss,eff characterization	Chosen when ruggedness in unclamped inductive loads is prioritized over high-frequency efficiency.

Compared with STP20NM20 and IXTP20N20P, IRFR220NTRLPBF offers superior high-frequency suitability due to its 15 nC Q_g, 46 pF C_oss,eff, and D-Pak thermal interface-making it optimal for space-constrained, >250 kHz telecom and industrial DC-DC converters where gate drive loss and layout parasitics dominate.

Availability

IRFR220NTRLPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC bricks, LED driver power stages, and server PSU hold-up circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR220NTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, focusing on energy-efficient systems for industrial, automotive, and communications markets.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in telecom and industrial infrastructure equipment.

FAQ

Is IRFR220NTRLPBF suitable for synchronous rectification?

No-it is an N-channel MOSFET intended for high-side switching, not low-side synchronous rectification. Its body diode reverse recovery characteristics (90–140 ns t_rr) are not optimized for freewheeling duty; dedicated synchronous rectifiers like IRF7832 offer lower Q_rr and tighter V_th matching.

What is the maximum recommended gate resistor for 500 kHz operation?

A 10 Ω gate resistor is recommended for 500 kHz operation with a 1A gate driver, balancing switching speed (20 ns td(off), 12 ns tf) against ringing suppression. Lower values increase dv/dt stress; higher values exceed 15 nC Q_g charge time and raise switching losses disproportionately.

Does IRFR220NTRLPBF require a heatsink in a 43 W power dissipation scenario?

No additional heatsink is required if mounted on ≥1 square inch of 2-oz copper with thermal vias to inner layers-the 3.5°C/W R_θJC enables full 43 W dissipation via PCB conduction alone. Ambient derating begins above 71°C case temperature per the 0.71 W/°C linear factor.

Can IRFR220NTRLPBF replace IRFU220NPbF in existing designs?

Yes-IRFR220NTRLPBF is the D-Pak variant of the same die used in the I-Pak IRFU220NPbF. Pinout, R_DS(on), Q_g, and avalanche specs are identical; only package (D-Pak vs. I-Pak) and thermal resistance (R_θJC = 3.5 vs. 4.0°C/W) differ, making it a direct PCB-layout upgrade for improved thermal performance.

IRFR220NTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR220NTRLPBF FAQ

1.How can I place an order for IRFR220NTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR220NTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR220NTRLPBF reliable?

The price and inventory of IRFR220NTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR220NTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR220NTRLPBF?

IRFR220NTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR220NTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR220NTRLPBF?

For technical support, including IRFR220NTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NTRLPBF requirements.

6.How does Aetrix verify that IRFR220NTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR220NTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR220NTRLPBF?

All IRFR220NTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR220NTRLPBF part is unused and in its original packaging.

Return procedure for IRFR220NTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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