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Infineon Technologies IRFR220NTRR
- Part No.:
- IRFR220NTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR220NTRR.pdf
- Description:
- MOSFET N-CH 200V 5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,515
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Product details
Overview
IRFR220NTRR from Infineon Technologies is a 200V, 5.0A N-channel enhancement-mode D-Pak (TO-252AA) power MOSFET optimized for high-frequency DC-DC converters in telecom 48V input forward topologies. It features 600 mΩ RDS(on) at VGS = 10V, 15 nC typical total gate charge, and 46 mJ single-pulse avalanche energy - enabling robust switching with reduced losses in compact SMPS designs.
For engineers reviewing the IRFR220NTRR datasheet, IRFR220NTRR pinout, IRFR220NTRR application, or IRFR220NTRR equivalent, key selection criteria include its low Qgd/Qg ratio for fast turn-off, fully characterized Coss and Coss,eff (46 pF), and validated avalanche capability under unclamped inductive switching - critical for reliable operation in isolated flyback and forward converter primary-side switches.
Technical Context
This HEXFET® device uses planar vertical DMOS technology with an integrated body diode exhibiting 90–140 ns reverse recovery time and 320–480 nC Qrr. Its gate threshold voltage (2.0–4.0 V) and 2.6 S forward transconductance support stable drive across temperature.
The MOSFET operates within -55°C to +175°C junction range, with RθJC = 3.5°C/W enabling high-power density mounting on PCB copper. Its SOA is defined up to 10 ms pulses at 200 V, limited by RDS(on) conduction at elevated case temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Withstands full 48V-input forward converter reflected voltages plus margin during transient spikes |
| RDS(on) max | 600 mΩ @ VGS = 10V, ID = 2.9A - Determines conduction loss in continuous 5A primary-side current paths |
| Qg typ | 15 nC - Sets minimum gate driver current requirement (e.g., ≥0.75 A peak for 20 ns rise time) |
| Coss,eff | 46 pF - Directly impacts hard-switching energy loss (Esw ≈ ½ × Coss,eff × VDS²) at turn-on |
| EAS | 46 mJ - Enables safe operation during single-event inductive energy dump without external snubber |
| dv/dt rating | 7.5 V/ns - Specifies maximum tolerable voltage slew rate across drain-source during diode recovery |
| TJ range | -55°C to +175°C - Supports operation in sealed telecom chassis with passive cooling and no forced airflow |
Pinout & Package
D-Pak (TO-252AA) package with exposed drain pad for thermal conduction and mechanical stability; leads are tin-plated copper, compatible with standard reflow profiles (300°C for 10 s).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | Receives 10V logic-level drive; Miller capacitance (Qgd = 6.1 nC typ) dominates turn-off timing |
| 2 - Drain | High-side switch node | Connected to transformer primary or bus rail; electrically tied to exposed backside pad for thermal path |
| 3 - Source | Reference node / return path | Serves as local ground for gate driver; carries full load current and body diode reverse recovery charge |
| 4 - Drain (tab) | Thermal & electrical connection | Provides low-inductance, low-resistance path to heatsink or PCB copper pour; not isolated from pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | ~41% (6.1/15 nC) - Reduces sensitivity to Miller-induced shoot-through in half-bridge configurations |
| Fully characterized Coss | 23 pF @ VDS = 160V - Enables accurate calculation of turn-on switching loss in 48V-forward applications |
| Avalanche-rated | 46 mJ single-pulse EAS - Eliminates need for external clamping in non-synchronous rectified topologies |
| Body diode Qrr | 320–480 nC - Quantifies stored charge that must be removed before next turn-on, affecting dead-time design |
| Thermal resistance | RθJC = 3.5°C/W - Allows >12 W dissipation with 40°C temperature rise from case to junction under PCB-mount conditions |
Applications
| Telecom Forward Converter | Industrial DC-DC Module |
|---|---|
Use Scenario: Primary-side switch in 48V-input, 12V-output forward converter operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-side synchronous switch handling 5A peak primary current; turns off before transformer reset to avoid cross-conduction. Use Value: Low Qg and Qgd minimize gate drive loss and enable clean zero-voltage switching transitions with minimal external components. | Use Scenario: Isolated auxiliary supply in programmable logic controller (PLC) backplane with wide ambient temperature range. IC Role / Device Role / Timing Role: Main power switch in 24V-input flyback converter delivering 5V/2A to control circuitry. Use Value: 175°C max TJ and 46 mJ EAS ensure reliability during overloads and thermal cycling without derating. |
| LED Driver Power Stage | Medical Equipment SMPS |
Use Scenario: Constant-current buck-boost LED driver for surgical lighting requiring low EMI and high efficiency. IC Role / Device Role / Timing Role: High-frequency PWM switch modulating 3A LED string current; body diode conducts during off-time. Use Value: Tight Qrr and trr specs (320 nC, 90 ns) reduce diode switching noise and improve EMI compliance in Class B environments. | Use Scenario: Input-stage DC-DC conversion in portable ultrasound battery charger with strict safety isolation requirements. IC Role / Device Role / Timing Role: Primary switch in reinforced-isolation flyback supplying isolated 15V bias rails. Use Value: Validated avalanche performance ensures fail-safe shutdown during transformer saturation events without secondary-side feedback loop intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK20Z | 200V, 2.2A, RDS(on) = 1.2 Ω, TO-220 package, no avalanche rating | Limited to lower-current (<2.5A), non-avalanche-critical applications; higher conduction loss | Select only when cost is primary constraint and peak current remains below 2A with ample thermal margin |
| IXTP20N20P | 200V, 20A, RDS(on) = 120 mΩ, TO-220, 100 mJ EAS, higher Qg (42 nC) | Higher current capacity but larger footprint and slower switching; requires stronger gate driver | Prefer for higher-power forward converters (>15W) where thermal mass and avalanche margin outweigh switching speed needs |
Compared with STP2NK20Z and IXTP20N20P, the IRFR220NTRR delivers optimal balance of current rating, switching speed, and ruggedness in D-Pak form factor - making it uniquely suited for space-constrained, medium-power telecom and industrial SMPS where board area and gate drive simplicity are critical.
Availability
IRFR220NTRR is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, LED driver power stages, and medical equipment SMPS requiring stable component supply and long-term production continuity.
Supply support for IRFR220NTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRFR220NTRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies in telecom infrastructure and industrial automation systems.
FAQ
Is IRFR220NTRR suitable for logic-level gate drive?
No - IRFR220NTRR is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires 10 V gate-to-source voltage to achieve rated RDS(on) of 600 mΩ. Driving it with 3.3 V or 5 V will result in significantly higher on-resistance and thermal stress; a dedicated gate driver or level-shifter is required for microcontroller-based control.
What is the maximum continuous drain current at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 3.5 A with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures - design must ensure junction temperature stays ≤175°C using RθJC = 3.5°C/W and appropriate PCB copper area.
Does IRFR220NTRR have a fully rated body diode for synchronous rectification?
No - while the integrated body diode is characterized (VSD = 1.3 V at 2.9 A, trr = 90–140 ns), it is not rated for sustained synchronous rectification. Its Qrr and forward voltage are higher than discrete Schottky diodes or dedicated synchronous MOSFETs; use only in non-synchronous or freewheeling roles where reverse recovery is managed by circuit topology.
Can IRFR220NTRR replace IRFU220N in existing designs?
Yes - IRFR220NTRR and IRFU220N share identical electrical specifications, thermal ratings, and pinout (D-Pak vs. I-Pak differ only in leadframe geometry and thermal pad exposure). The IRFR220NTRR's D-Pak package offers superior PCB thermal conduction via the exposed drain tab, making it preferable for thermally demanding layouts without requiring schematic or layout changes.
IRFR220NTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR220NTRR FAQ
1.How can I place an order for IRFR220NTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR220NTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR220NTRR reliable?
The price and inventory of IRFR220NTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NTRR is usually 5 days.
3.What payment methods are accepted for IRFR220NTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR220NTRR?
IRFR220NTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR220NTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR220NTRR?
For technical support, including IRFR220NTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NTRR requirements.
6.How does Aetrix verify that IRFR220NTRR is sourced from the original manufacturer or authorized distributors?
All IRFR220NTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NTRR meets industry standards.
7.What is the process for return or replacement of IRFR220NTRR?
All IRFR220NTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR220NTRR part is unused and in its original packaging.
Return procedure for IRFR220NTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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