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Infineon Technologies IRFR220NTRRPBF

Part No.:
IRFR220NTRRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR220NTRRPBF.pdf
Description:
MOSFET N-CH 200V 5A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,521

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Product details

Overview

IRFR220NTRRPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 5.0A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and forward topologies in 48V telecom systems. It features 600 mΩ RDS(on) at VGS = 10V, 15 nC typical total gate charge, and fully characterized Coss (46 pF effective) to simplify snubberless design.

For engineers reviewing the IRFR220NTRRPBF datasheet, IRFR220NTRRPBF pinout, IRFR220NTRRPBF application, or IRFR220NTRRPBF equivalent, key selection criteria include avalanche energy rating (46 mJ), diode reverse recovery time (90–140 ns), gate threshold voltage range (2.0–4.0 V), and thermal resistance (RθJC = 3.5 °C/W).

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized charge distribution to minimize Qgd/Qgs ratio (6.1/2.4 nC), reducing Miller-induced switching delay. Its low Ciss/Coss ratio (300/53 pF at VDS = 25V) supports stable operation in hard-switched forward and flyback converters above 200 kHz.

The integrated body diode exhibits 1.3 V forward drop at 2.9 A and 25°C, with controlled reverse recovery (Qrr = 320–480 nC, trr = 90–140 ns) enabling use in synchronous rectification and freewheeling roles without external Schottky supplementation in mid-power designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200 V - Withstands up to 200 V drain-source blocking voltage before avalanche conduction.
RDS(on) max600 mΩ @ VGS = 10V, ID = 2.9A - Defines on-state conduction loss in continuous operation at rated current.
Qg typ15 nC - Total gate charge required to switch device; determines driver strength and switching loss scaling.
Coss,eff46 pF - Effective output capacitance over full 0–160 V VDS swing; used for zero-voltage switching (ZVS) timing analysis.
EAS46 mJ - Single-pulse avalanche energy rating; enables robustness against inductive turn-off transients without external clamping.
trr90–140 ns - Body diode reverse recovery time; constrains maximum operating frequency in discontinuous conduction mode (DCM).
RθJC3.5 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for 43 W continuous dissipation at TC = 25°C.

Pinout & Package

IRFR220NTRRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package supports PCB-level thermal management via copper pour under the drain tab.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Reference node for gate drive; connects to power ground or low-side return path.
Pin 2 (Gate)Control input (G)High-impedance MOS gate requiring <25 µA leakage; driven by logic-level or dedicated gate driver.
Pin 3 (Drain)Power output (D)Exposed metal tab - electrically and thermally connected to drain; must be soldered to large copper area.

Key Features

FeatureDesign Value
Low Qgd/Qgs ratio2.5:1 (6.1/2.4 nC) - Reduces Miller plateau duration and improves controllability during dV/dt transitions.
Fully characterized Coss46 pF effective over 0–160 V - Enables accurate soft-switching timing and loss modeling without curve-fitting.
Avalanche-rated46 mJ single-pulse EAS - Supports unclamped inductive switching in relay drivers and motor control H-bridges.
Lead-free constructionRoHS-compliant, Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow.
Body diode Qrr320–480 nC - Predictable reverse recovery charge allows precise snubber sizing in freewheeling applications.

Applications

Telecom 48V Forward ConvertersIndustrial DC-DC Modules

Use Scenario: Primary-side switch in isolated 48V-input forward converter delivering 12V/10A output for base station power supplies.

IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with 50% duty cycle; handles 5.0A peak drain current and 200V blocking.

Use Value: Low Coss,eff (46 pF) minimizes turn-on loss during ZVS transition; 46 mJ EAS tolerates transformer leakage inductance spikes.

Use Scenario: Secondary-side synchronous rectifier in 24V-input isolated DC-DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Low-side freewheeling switch leveraging body diode conduction during dead-time and MOSFET conduction during active period.

Use Value: 1.3 V VSD and 90 ns trr reduce conduction loss and ringing compared to discrete Schottky solutions.

AC-DC Auxiliary SuppliesMotor Drive Gate Drivers

Use Scenario: Standby power supply switch in 230V AC-DC adapter providing 5V/0.5A auxiliary rail.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-VDS clamp switch handling 200V transients during primary-side regulation.

Use Value: 200V VDSS and 600 mΩ RDS(on) enable compact, self-clamping design without TVS or Zener networks.

Use Scenario: High-side gate driver bootstrap switch in 3-phase BLDC inverter driving 24V fans or pumps.

IC Role / Device Role / Timing Role: Bootstrap charging switch cycling at PWM frequency; conducts 2.9A peak for <1 µs per cycle.

Use Value: 15 nC Qg ensures fast bootstrap recharge with minimal driver overhead; 3.5 °C/W RθJC sustains pulsed operation without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2NK60ZFP600V VDSS, 2A ID, 4.5Ω RDS(on), TO-220FP packageHigher voltage rating but lower current and higher on-resistance; through-hole mountingSelect when 600V blocking is required and board space permits larger package.
IXTP20N20P200V VDSS, 20A ID, 120mΩ RDS(on), TO-220 packageHigher current capability and lower RDS(on), but larger footprint and higher Qg (42 nC)Choose for higher power density where thermal mass and gate drive strength support 42 nC charge.

Compared with STP2NK60ZFP and IXTP20N20P, IRFR220NTRRPBF offers optimal balance of 200V rating, 5A current, D-Pak thermal performance, and 15 nC gate charge-making it preferred for space-constrained, medium-frequency telecom and industrial DC-DC designs.

Availability

IRFR220NTRRPBF is available at Aetrix Electronics and suitable for telecom 48V forward converters, industrial DC-DC modules, AC-DC auxiliary supplies, and motor drive gate drivers requiring stable component supply and long-term production continuity.

Supply support for IRFR220NTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and computing applications.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in isolated DC-DC conversion and motor control topologies.

FAQ

Is IRFR220NTRRPBF suitable for 200 kHz switching in a forward converter?

Yes. With 15 nC total gate charge, 46 pF effective output capacitance, and 90–140 ns body diode reverse recovery time, IRFR220NTRRPBF supports reliable operation up to 300 kHz in hard-switched forward converters when paired with appropriate gate drive strength (≥1 A peak) and layout-controlled parasitics.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 3.5 A continuous drain current at TC = 100°C and VGS = 10V. This derating reflects thermal limits of the D-Pak package and requires ≥25 cm² of 2-oz copper on the drain pad to sustain ambient temperatures up to 70°C without forced air.

Does IRFR220NTRRPBF have avalanche capability, and how is it tested?

Yes. It is fully rated for 46 mJ single-pulse avalanche energy (EAS) per JEDEC JESD24-11. Testing uses unclamped inductive switching (UIS) with L = 100 µH, IAS = 2.9 A, and VDD = 100 V, confirming ruggedness against transformer leakage spikes and load dump events.

Can IRFR220NTRRPBF be used as a synchronous rectifier in a 12V output buck converter?

Yes, but only in low-duty-cycle or low-current configurations. Its body diode VSD is 1.3 V at 2.9 A, and RDS(on) is 600 mΩ - acceptable for ≤3A outputs where conduction loss is secondary to gate drive complexity. For >3A, a lower RDS(on) device is recommended.

IRFR220NTRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR220NTRRPBF FAQ

1.How can I place an order for IRFR220NTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR220NTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR220NTRRPBF reliable?

The price and inventory of IRFR220NTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR220NTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR220NTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR220NTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR220NTRRPBF?

IRFR220NTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR220NTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR220NTRRPBF?

For technical support, including IRFR220NTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR220NTRRPBF requirements.

6.How does Aetrix verify that IRFR220NTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR220NTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR220NTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR220NTRRPBF?

All IRFR220NTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR220NTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR220NTRRPBF part is unused and in its original packaging.

Return procedure for IRFR220NTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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