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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR2307Z

Name: IRFR2307Z
Brand: Infineon Technologies
SKU: IRFR2307Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR2307Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR2307Z.pdf

Description:: MOSFET N-CH 75V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR2307Z from Infineon Technologies is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 75V V_DSS, 16 mΩ R_DS(on) at V_GS = 10 V, and 42 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 16 ns, t_f = 29 ns), and rated repetitive avalanche capability - designed for high-reliability engine control, powertrain DC-DC converters, and load switch applications.

For engineers reviewing the IRFR2307Z datasheet, IRFR2307Z pinout, IRFR2307Z application, or IRFR2307Z equivalent, key selection considerations include its 12.8–16 mΩ on-resistance tolerance, 50–75 nC total gate charge, 175°C thermal rating, body diode reverse recovery time (31–47 ns), and D-Pak thermal resistance (R_θJC = 1.42°C/W).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust avalanche performance. Its low R_DS(on) and optimized gate charge (Q_g = 50–75 nC) support high-efficiency synchronous rectification and PWM motor control in 12 V/24 V automotive systems.

The integrated body diode exhibits V_SD ≤ 1.3 V at 32 A and t_rr = 31–47 ns under specified conditions, enabling reliable freewheeling in inductive loads without external diode supplementation. Repetitive avalanche energy (E_AR) is characterized up to T_jmax, with validated safe operation under unclamped inductive switching per Figure 12a–12b.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Withstands up to 75 V drain-source voltage before breakdown; suitable for 42 V automotive battery systems and transient-suppressed 24 V rail designs.
R_DS(on)	12.8–16 mΩ @ V_GS = 10 V - Low conduction loss enables <1.3 W dissipation at 42 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous)	42 A @ T_C = 25°C - Sustains full-rated current with PCB-mounted case cooling; derates linearly above 25°C (1.42°C/W junction-to-case).
Q_g	50–75 nC - Gate drive energy requirement determines minimum gate driver peak current (e.g., ≥7.5 A for 10 ns rise time with 10 Ω R_G).
t_rr	31–47 ns - Fast body diode recovery minimizes switching loss and voltage overshoot during hard-commutation in half-bridge topologies.
T_j max	175°C - Enables operation in under-hood environments (e.g., transmission control units) without thermal shutdown under transient load.

Pinout & Package

IRFR2307Z uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal conduction. The three-terminal configuration supports high-current PCB routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to die backside and exposed copper pad; must be soldered to large copper pour for thermal management.
Source (S)	Reference node for gate drive and current return	Low-inductance source connection critical for stable switching; internal L_S = 7.5 nH affects gate loop stability.
Gate (G)	Control input for channel modulation	High-impedance MOS gate requiring controlled slew rate; Q_gd = 19 nC dominates Miller effect during switching transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12.8–16 mΩ enables >96% efficiency in 12 V/30 A DC-DC stages at 250 kHz switching frequency.
Repetitive avalanche rating	Tested E_AS = 210 mJ (single pulse); validated for repeated unclamped inductive switching in solenoid drivers.
175°C junction rating	Supports operation in engine bay locations where ambient exceeds 125°C, eliminating need for derating in most OEM thermal profiles.
Fast body diode	V_SD ≤ 1.3 V and t_rr ≤ 47 ns reduce freewheeling loss by ~35% vs. standard MOSFETs in buck converter outputs.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 1–2 ms pulse widths and 10 A peak load.

IC Role / Device Role / Timing Role: Primary power switch delivering precise current pulses; operates in hard-switched mode with body diode freewheeling.

Use Value: 16 mΩ R_DS(on) limits conduction loss to <1.6 W at 10 A, while 175°C rating ensures reliability across -40°C to +150°C under-hood thermal cycling.

Use Scenario: PWM-controlled 24 V blower motor driving up to 35 A continuous current in cabin air systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles bidirectional current during regenerative braking phases.

Use Value: 42 A continuous rating and 210 A pulsed capability accommodate motor startup surges; fast t_rr prevents shoot-through during direction reversal.

12 V/48 V Bi-directional DC-DC Converter

Transmission Control Module Load Switch

Use Scenario: Synchronous rectifier in isolated dual-voltage DC-DC stage converting between 12 V battery and 48 V mild-hybrid rail.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–300 kHz; body diode conducts during dead-time intervals.

Use Value: Low Q_g (50–75 nC) and C_oss = 280 pF enable efficient zero-voltage switching (ZVS) transition, reducing switching loss by >40% vs. legacy MOSFETs.

Use Scenario: High-side load switch isolating auxiliary 12 V circuits (e.g., seat heaters, ADAS sensors) with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Protected power distribution switch; used with external gate driver and current-sense resistor.

Use Value: Repetitive avalanche capability absorbs inductive kickback from relay coils; 175°C rating ensures uninterrupted operation during prolonged fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V V_DSS, 0.75 mΩ R_DS(on), 220 A I_D; DFN5x6 package, no exposed drain pad	Limited to 24 V systems; unsuitable for 42 V transients or 75 V load dump	Select only for low-voltage, ultra-high-current applications where board space is constrained and thermal interface is via top-side cooling.
ON Semiconductor NTMFS4C09NT1G	40 V V_DSS, 0.95 mΩ R_DS(on), 100 A I_D; SO-8FL package, R_θJA = 50°C/W	Lower voltage rating and higher thermal resistance limit use to non-under-hood, low-duty-cycle loads	Prefer for cost-sensitive 12 V accessory switches where junction temperature stays below 130°C and avalanche stress is absent.

Compared with STL220N4F7AG and NTMFS4C09NT1G, IRFR2307Z uniquely balances 75 V ruggedness, D-Pak thermal performance (R_θJC = 1.42°C/W), and automotive-qualified avalanche endurance - making it the only option among the three qualified for sustained 175°C operation in engine compartment power stages.

Availability

IRFR2307Z is available at Aetrix Electronics and suitable for automotive powertrain control, HVAC motor drives, and 12 V/48 V DC-DC converters requiring stable component supply across extended vehicle lifecycles.

Supply support for IRFR2307Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and automotive qualification expertise.

The IRFR2307Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine control, transmission, and chassis subsystems.

FAQ

Is IRFR2307Z AEC-Q101 qualified?

Yes, IRFR2307Z is AEC-Q101 qualified per Infineon's official documentation (PD-96910). It has passed stress tests including HTGB, HTRB, AC-H3TRB, and UHAST, confirming suitability for automotive power applications with lifetime reliability targets exceeding 15 years.

What is the recommended gate resistor for 100 kHz PWM operation?

A 10 Ω gate resistor is validated in the datasheet for V_GS = 10 V drive with t_r = 65 ns and t_f = 29 ns. For 100 kHz operation, this value balances switching speed and EMI; lower values (≤5 Ω) increase dV/dt risk, while higher values (>22 Ω) raise switching losses beyond 0.5 W at 42 A.

Can IRFR2307Z replace IRFR2207Z in existing designs?

Yes - IRFR2307Z is a direct drop-in replacement for IRFR2207Z with identical D-Pak package, pinout, and footprint. It improves R_DS(on) from 20 mΩ to 16 mΩ and increases I_D from 36 A to 42 A, offering measurable efficiency gain without layout changes.

Does the body diode support continuous conduction mode (CCM) in synchronous buck converters?

Yes - the body diode is rated for 42 A continuous source current (I_S) and 210 A pulsed (I_SM). Its t_rr = 31–47 ns and Q_rr = 31–47 nC are characterized for CCM operation at ≤300 kHz, provided gate drive timing avoids cross-conduction and thermal limits are observed.

IRFR2307Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2190 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR2307Z FAQ

1.How can I place an order for IRFR2307Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2307Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2307Z reliable?

The price and inventory of IRFR2307Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2307Z is usually 5 days.

3.What payment methods are accepted for IRFR2307Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2307Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2307Z?

IRFR2307Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2307Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2307Z?

For technical support, including IRFR2307Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2307Z requirements.

6.How does Aetrix verify that IRFR2307Z is sourced from the original manufacturer or authorized distributors?

All IRFR2307Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2307Z meets industry standards.

7.What is the process for return or replacement of IRFR2307Z?

All IRFR2307Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2307Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2307Z part is unused and in its original packaging.

Return procedure for IRFR2307Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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