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Infineon Technologies IRFR2307ZPBF
- Part No.:
- IRFR2307ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR2307ZPBF.pdf
- Description:
- MOSFET N-CH 75V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,850
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Product details
Overview
IRFR2307ZPBF from Infineon Technologies is a 75V, 42A N-channel D-Pak power MOSFET with 16mΩ RDS(on) at VGS = 10V, 175°C junction rating, and rated repetitive avalanche capability. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies where low conduction loss and fast switching are critical.
For engineers reviewing the IRFR2307ZPBF datasheet, IRFR2307ZPBF pinout, IRFR2307ZPBF application, or IRFR2307ZPBF equivalent, key selection criteria include its 12.8–16mΩ on-resistance range, 50–75nC total gate charge, 175°C thermal limit, body diode reverse recovery time (31–47ns), and D-Pak package thermal resistance (RθJC = 1.42°C/W).
Technical Context
This HEXFET® device uses advanced silicon processing to minimize RDS(on) per die area while maintaining robust avalanche performance. Its gate threshold voltage (2.0–4.0V) enables reliable 5V and 10V logic-level drive, and its 30S forward transconductance supports stable current regulation under dynamic load conditions.
The integrated body diode features VSD ≤ 1.3V at 32A and fast trr (31–47ns), making it suitable for freewheeling and synchronous rectification in hard-switched topologies. Thermal design is enabled by validated transient impedance curves (Fig.11) and linear derating (0.70W/°C above 25°C case temperature).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, flyback, and half-bridge designs. |
| RDS(on) | 12.8–16mΩ @ VGS=10V - Directly determines I²R conduction loss; enables <1.7W loss at 32A continuous drain current. |
| ID | 42A @ TC=25°C - Continuous current rating limited by package thermal capacity; derates to ~21A at TC=100°C. |
| Qg | 50–75nC - Total gate charge defines driver strength requirement; impacts switching loss and gate drive power at >100kHz. |
| TJ max | 175°C - Enables operation in high-ambient environments (e.g., automotive under-hood, industrial enclosures) without thermal shutdown. |
| EAS | 53mJ (tested) - Single-pulse avalanche energy rating allows safe unclamped inductive turn-off in relay drivers and solenoid controls. |
| trr / Qrr | 31–47ns / 31–47nC - Body diode recovery metrics critical for minimizing shoot-through risk and EMI in synchronous rectifiers. |
Pinout & Package
IRFR2307ZPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal conduction. The package footprint complies with JEDEC MO-238 and supports PCB copper pour for RθJC = 1.42°C/W performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (body diode cathode) | Reference node for gate drive; connects to power ground or low-side return path; carries full load current in low-side switch configuration. |
| Pin 2 (Gate) | Control input | High-impedance MOSFET control node; requires <75nC charge to fully enhance; sensitive to ESD (±20V max gate-source voltage). |
| Pin 3 (Drain) | Power output / high-side connection | Exposed metal pad tied to internal die drain; primary heat transfer path to PCB; connects to input bus or transformer secondary in flyback/foward topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 12.8mΩ typ. at 10V gate drive reduces conduction loss by >35% vs. legacy 75V MOSFETs in 12V–48V systems. |
| 175°C junction rating | Enables sustained operation in sealed enclosures or high-ambient industrial environments without forced air cooling. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to Tjmax, eliminating need for external snubbers in relay/solenoid drivers. |
| Fast body diode | 31ns typical reverse recovery time minimizes cross-conduction loss and EMI in synchronous rectifier applications. |
| Lead-free construction | RoHS-compliant finish meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard SMT reflow. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Drive |
|---|---|
Use Scenario: High-current step-down regulator supplying 5V/20A to FPGA or ASIC core rails in telecom infrastructure. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Achieves >94% efficiency at full load due to 16mΩ RDS(on) and 31ns trr, cutting thermal dissipation by 3.2W vs. diode solution. | Use Scenario: H-bridge driver for 24V, 15A brushed motors in automated warehouse conveyors. IC Role / Device Role: High-current quadrant switch enabling bidirectional torque control and regenerative braking via body diode conduction. Use Value: 42A continuous rating and 210A pulsed source current support peak stall currents; 175°C rating prevents thermal shutdown during extended acceleration cycles. |
| Industrial Power Supply | Solenoid / Relay Driver |
Use Scenario: 48V input, 12V/30A output AC-DC front-end with active PFC and LLC resonant stage. IC Role / Device Role: Primary-side switching FET in LLC half-bridge or synchronous rectifier in secondary-side SR stage. Use Value: 75V VDSS provides 20% margin over 48V nominal bus; 50nC Qg enables clean 300kHz switching with standard gate drivers. | Use Scenario: Solid-state replacement for 24VDC industrial relays controlling HVAC dampers or valve actuators. IC Role / Device Role: Unclamped inductive load switch with built-in avalanche energy handling. Use Value: 53mJ EAS rating absorbs turn-off energy from 2H/500mA solenoids without external TVS, reducing BOM count and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75V, 80A, RDS(on) = 10.5mΩ, TO-220 package, higher Qg (120nC) | Higher current rating but larger footprint and slower switching; requires heatsink in same thermal envelope | Select when higher continuous current (>50A) is needed and board space allows through-hole mounting. |
| IRL3803PbF | 30V, 140A, RDS(on) = 3.3mΩ, D-Pak, logic-level (1.8V VGS(th)) | Lower voltage rating limits use to ≤24V systems; superior RDS(on) but no 75V blocking capability | Select only for low-voltage (<30V), ultra-high-current applications where 75V headroom is unnecessary. |
Compared with STP75NF75 and IRL3803PbF, IRFR2307ZPBF offers optimal balance of 75V rating, D-Pak surface-mount compatibility, 16mΩ on-resistance, and 50nC gate charge-making it preferred for space-constrained, medium-voltage industrial power stages requiring efficient thermal management without heatsinks.
Availability
IRFR2307ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, RoHS compliance, and long-term lifecycle support.
Supply support for IRFR2307ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with headquarters in Munich, Germany.
The HEXFET® Power MOSFET product line delivers high-efficiency, thermally robust discrete switches optimized for industrial motor control, renewable energy inverters, and high-reliability power conversion systems.
FAQ
Is IRFR2307ZPBF suitable for 5V logic-level gate drive?
Yes - its gate threshold voltage (VGS(th)) ranges from 2.0V to 4.0V, ensuring full enhancement at 5V drive. However, RDS(on) is specified at VGS = 10V; at 5V, on-resistance increases to ~28mΩ, raising conduction loss by ~75% versus 10V drive.
What is the maximum recommended PCB copper area for thermal performance?
For optimal RθJC = 1.42°C/W, the D-Pak drain pad must connect to ≥250mm² (0.4in²) of 2oz copper on the primary layer, with ≥4 thermal vias (0.3mm diameter) to inner ground planes. Larger copper areas further reduce RθJA from 110°C/W to ~65°C/W in still air.
Does IRFR2307ZPBF require a gate resistor for stability?
Yes - a series gate resistor (typically 5–22Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 150pF) and PCB inductance. Without it, overshoot exceeding ±20V VGS may cause premature failure; layout parasitics also influence optimal value.
Can IRFR2307ZPBF replace IRFR2207PbF in existing designs?
No - although both are D-Pak 75V MOSFETs, IRFR2207PbF has RDS(on) = 20mΩ and lower Qg (42nC). IRFR2307ZPBF's 16mΩ RDS(on) improves conduction loss but increases switching loss and gate drive demand; layout and driver validation are required before substitution.
IRFR2307ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2190 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR2307ZPBF FAQ
1.How can I place an order for IRFR2307ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR2307ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR2307ZPBF reliable?
The price and inventory of IRFR2307ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2307ZPBF is usually 5 days.
3.What payment methods are accepted for IRFR2307ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2307ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR2307ZPBF?
IRFR2307ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR2307ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR2307ZPBF?
For technical support, including IRFR2307ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2307ZPBF requirements.
6.How does Aetrix verify that IRFR2307ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFR2307ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2307ZPBF meets industry standards.
7.What is the process for return or replacement of IRFR2307ZPBF?
All IRFR2307ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2307ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR2307ZPBF part is unused and in its original packaging.
Return procedure for IRFR2307ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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