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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR2405TRL

Name: IRFR2405TRL
Brand: Infineon Technologies
SKU: IRFR2405TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR2405TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR2405TRL.pdf

Description:: MOSFET N-CH 55V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR2405TRL from Infineon Technologies (formerly International Rectifier) is a 55 V, 56 A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) surface-mount package, featuring 11.8 mΩ typical R_DS(on) at V_GS = 10 V, 130 mJ single-pulse avalanche energy rating, and fast switching with 15 ns turn-on delay and 78 ns fall time. It serves as a primary high-efficiency switching element in DC-DC converters, motor drive half-bridges, and synchronous rectification stages.

For engineers reviewing the IRFR2405TRL datasheet, IRFR2405TRL pinout, IRFR2405TRL application, or IRFR2405TRL equivalent, key selection criteria include its 0.0118 Ω on-resistance at 34 A, 220 A pulsed drain current capability, 1.4 °C/W junction-to-case thermal resistance, and full avalanche ruggedness-critical for inductive load switching and overvoltage transient resilience.

Technical Context

This seventh-generation HEXFET® device uses advanced silicon processing to minimize conduction losses while maintaining robust safe operating area (SOA) up to 10 ms at 55 V. Its gate charge profile (70 nC typical Q_g, 19 nC Q_gd) supports high-frequency PWM operation above 100 kHz with low driver power demand.

The integrated body diode exhibits 62 ns reverse recovery time and 170 nC Q_rr at I_F = 34 A, enabling efficient freewheeling in buck and half-bridge topologies without external Schottky supplementation under moderate dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems.
R_DS(on) @ V_GS=10 V	0.0118 Ω (typ) - Enables ≤2.2 W conduction loss at 34 A continuous drain current in PCB-mounted applications.
I_D @ T_C=25°C	56 A - Continuous current rating under ideal heatsinking; limited to 30 A by package thermal constraints in standard layouts.
E_AS	130 mJ - Single-pulse avalanche energy capacity; allows reliable operation during inductive turn-off transients without snubbers.
Q_g	70 nC (typ) - Total gate charge determines driver strength requirement; enables <1 µs switching transitions with 1 A peak gate drive.
t_f	78 ns - Fast fall time minimizes overlap loss in synchronous rectifiers and reduces EMI generation in high-frequency SMPS.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables direct thermal pad attachment to copper planes for high-power density designs.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with lead assignments per JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; requires 70 nC total charge for full enhancement; Miller capacitance (19 nC) dominates turn-off timing.
2 & 4 (Drain)	High-side power path	Internally connected drain terminals; electrically tied to exposed backside metal pad-must be routed to high-current DC bus or heat sink.
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects high-dI/dt switching stability.

Key Features

Feature	Design Value
Seventh-generation HEXFET® process	Delivers 11.8 mΩ R_DS(on) in D-Pak-22% lower than prior gen-enabling higher efficiency in space-constrained 48 V power stages.
Full unclamped inductive switching (UIS) rating	130 mJ single-pulse avalanche energy ensures survival during worst-case inductive turn-off without external clamping components.
Low gate-to-drain charge (Q_gd)	19 nC Miller charge reduces susceptibility to dv/dt-induced false turn-on in high-side configurations with >5 V/ns slew rates.
Optimized body diode performance	62 ns t_rr and 170 nC Q_rr allow use in synchronous rectification without significant reverse recovery loss penalty at ≤100 kHz.

Applications

DC-DC Buck Converter

Brushless DC Motor Inverter

Use Scenario: High-efficiency 48 V input to 12 V output step-down converter in telecom power supplies.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 200 kHz PWM frequency with synchronous rectification on low-side.

Use Value: 0.0118 Ω R_DS(on) limits conduction loss to 1.4 W at 34 A, while 78 ns fall time reduces switching loss below 0.8 W at rated load.

Use Scenario: Half-bridge leg in 3-phase BLDC controller for industrial fans and pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling 56 A peak phase current with 100 ns dead-time margin.

Use Value: 130 mJ avalanche rating absorbs inductive kickback during commutation; 1.4 °C/W R_θJC enables direct copper pour cooling without heatsink.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush current limiting and fault protection in 24–48 V server backplane power distribution.

IC Role / Device Role / Timing Role: Series pass element controlled by external current-sense amplifier and comparator.

Use Value: 55 V V_DSS accommodates 48 V nominal + 20% tolerance; 220 A pulsed ID supports short-circuit withstand for ≥100 µs.

Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in architectural lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator switching at 1–5 kHz to modulate average LED current.

Use Value: Low R_DS(on) minimizes dropout voltage across sense resistor; body diode forward drop of 1.3 V at 34 A enables efficient low-V_f freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 50 A I_D, 0.014 Ω R_DS(on), TO-220 package	Through-hole mounting only; higher R_DS(on) increases conduction loss by ~19% at same current	Select when board-level thermal management favors through-hole heatsinking and 60 V margin is required.
IXTP50N055	55 V V_DSS, 50 A I_D, 0.0125 Ω R_DS(on), TO-220 package	Higher gate charge (95 nC vs. 70 nC); slower switching with 110 ns t_f	Prefer when lower cost outweighs switching loss penalty and surface-mount assembly is not required.

Compared with STP55NF06L and IXTP50N055, IRFR2405TRL delivers superior power density via D-Pak thermal performance and faster switching due to lower Q_g and Q_gd, making it optimal for compact, high-frequency, surface-mount power stages where board space and efficiency are critical.

Availability

IRFR2405TRL is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, hot-swap controllers, and LED drivers requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRFR2405TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRFR2405TRL belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage (≤60 V) power conversion systems where low R_DS(on), fast switching, and rugged avalanche performance are essential.

FAQ

Is IRFR2405TRL suitable for logic-level gate drive?

No-IRFR2405TRL is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires 10 V gate drive to achieve specified R_DS(on) of 0.0118 Ω. Driving it with 3.3 V or 5 V results in significantly higher on-resistance (>0.1 Ω), excessive conduction loss, and thermal runaway risk under load.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, mount IRFR2405TRL on a minimum 1-inch square (25.4 mm × 25.4 mm) FR-4 PCB copper pour connected to the drain pad. This achieves the published R_θJA of 50 °C/W. Smaller pads increase junction temperature by up to 35 °C at full 56 A current, risking SOA violation.

Can IRFR2405TRL replace IRFR2205 in existing designs?

Yes-with verification. IRFR2405TRL offers 55 V V_DSS vs. 2205's 55 V, identical D-Pak package, and lower R_DS(on) (0.0118 Ω vs. 0.022 Ω). However, its higher gate charge (70 nC vs. 45 nC) may require gate driver strength adjustment to maintain switching speed and prevent shoot-through in half-bridge configurations.

Does IRFR2405TRL have built-in ESD protection?

No-IRFR2405TRL lacks integrated gate protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and exposure to static discharge exceeding ±10 V can cause permanent damage. External 10 V Zener clamps between gate and source are strongly recommended in handling and circuit layout.

IRFR2405TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR2405TRL FAQ

1.How can I place an order for IRFR2405TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2405TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2405TRL reliable?

The price and inventory of IRFR2405TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2405TRL is usually 5 days.

3.What payment methods are accepted for IRFR2405TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2405TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2405TRL?

IRFR2405TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2405TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2405TRL?

For technical support, including IRFR2405TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2405TRL requirements.

6.How does Aetrix verify that IRFR2405TRL is sourced from the original manufacturer or authorized distributors?

All IRFR2405TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2405TRL meets industry standards.

7.What is the process for return or replacement of IRFR2405TRL?

All IRFR2405TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2405TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2405TRL part is unused and in its original packaging.

Return procedure for IRFR2405TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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