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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR2405TRR

Name: IRFR2405TRR
Brand: Infineon Technologies
SKU: IRFR2405TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR2405TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR2405TRR.pdf

Description:: MOSFET N-CH 55V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR2405TRR from Infineon Technologies (formerly International Rectifier) is a 55 V, 56 A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) surface-mount package, featuring 11.8 mΩ typical R_DS(on) at V_GS = 10 V, 130 mJ single-pulse avalanche energy rating, and fast switching with 15 ns turn-on delay and 78 ns fall time - deployed in DC-DC converters, motor drives, and synchronous rectification circuits.

For engineers reviewing the IRFR2405TRR datasheet, IRFR2405TRR pinout, IRFR2405TRR application, or IRFR2405TRR equivalent, key selection criteria include its 55 V V_DSS, 0.0118 Ω R_DS(on), 70 nC total gate charge, 1.4 °C/W junction-to-case thermal resistance, and D-Pak footprint compatibility for high-current, thermally constrained PCB layouts.

Technical Context

This HEXFET® Seventh Generation MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its fully avalanche-rated structure supports 34 A repetitive avalanche current and 11 mJ repetitive avalanche energy under defined conditions.

The device integrates a low-loss body diode with 1.3 V forward voltage at 34 A and 62 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Gate drive requirements are optimized for 10 V logic-level operation, with 0.052 V/°C breakdown voltage temperature coefficient ensuring stable overvoltage margin across -55°C to +175°C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and half-bridge legs.
R_DS(on) @ V_GS=10 V	0.0118 Ω (typ) - Enables <1 W conduction loss at 34 A, critical for high-efficiency 12–48 V power stages.
I_D @ T_C=25°C	56 A - Continuous drain current rating under ideal heatsinking; limited to 30 A by package thermal constraints in standard PCB mount.
Q_g	70 nC (typ) - Total gate charge determines driver strength requirement; enables ~1 MHz switching with moderate gate drivers.
E_AS	130 mJ - Single-pulse avalanche energy capacity allows safe operation during inductive load turn-off transients without external snubbers.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance confirms direct thermal path to heatsink or copper pour; enables >90 W power dissipation with 125°C ΔT.
trr	62 ns - Body diode reverse recovery time impacts switching losses and EMI in synchronous rectifiers and LLC resonant converters.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Gate, Drain, Source), lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives 10 V logic-level signal to fully enhance channel; requires ≤70 nC charge for full turn-on; sensitive to ESD (±20 V max).
2 – Drain	High-side power terminal	Connected to PCB copper pour or heatsink via exposed pad; carries full load current and must be routed with low-inductance layout.
3 – Source	Reference node / return path	Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects switching waveform ringing.
4 – Drain (exposed pad)	Thermal & power return	Electrically tied to pin 2; primary thermal path to PCB; must be soldered to ≥1"² FR-4 copper area for rated 110 W dissipation.

Key Features

Feature	Design Value
Seventh Generation HEXFET® process	Delivers 11.8 mΩ R_DS(on) in D-Pak - 25% lower than prior gen at same voltage class, reducing conduction loss in space-constrained designs.
Fully avalanche rated	Withstands 130 mJ single-pulse and 11 mJ repetitive avalanche events - eliminates need for external clamping in inductive switching applications.
Dynamic dv/dt rating	5.0 V/ns peak diode recovery dv/dt - ensures robustness against parasitic turn-on during high-speed commutation in bridge configurations.
Low gate charge profile	70 nC Q_g with 19 nC Q_gd - minimizes Miller effect, enabling clean turn-off and stable operation up to 1 MHz with standard gate drivers.
Optimized body diode	62 ns trr and 170 nC Q_rr - reduces reverse recovery loss and EMI in synchronous rectification and flyback converters.

Applications

DC-DC Buck Converter

Brushless DC Motor Drive

Use Scenario: High-efficiency 12 V input to 3.3/5 V output conversion in telecom and server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 0.0118 Ω R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky, enabling >95% efficiency at 20 A output.

Use Scenario: Low-voltage (<48 V) 3-phase BLDC inverter for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation, handling continuous 30–40 A phase current.

Use Value: 130 mJ E_AS withstands back-EMF spikes during abrupt current interruption, eliminating snubber networks.

Hot-Swap Controller

LED Driver Power Stage

Use Scenario: Inrush current limiting and fault protection in 24–48 V board-level power distribution.

IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and gate driver IC.

Use Value: 55 V V_DSS provides 2× margin over 48 V nominal rail, supporting transient surges up to 60 V without breakdown.

Use Scenario: Constant-current boost LED driver for automotive interior lighting and signage.

IC Role / Device Role / Timing Role: Main switching FET in high-side boost topology driving 1–3 A strings at 30–40 V output.

Use Value: 78 ns fall time and 15 ns td(on) enable clean PWM dimming at 1–5 kHz with minimal switching loss and audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 50 A I_D, 0.014 Ω R_DS(on), TO-220 package	Through-hole mounting only; higher R_DS(on) and no exposed drain pad for thermal management	Preferred where through-hole assembly and higher voltage margin are required, but not suitable for D-Pak-restricted layouts.
IXTP50N055	55 V V_DSS, 50 A I_D, 0.013 Ω R_DS(on), TO-220FP package	Vertical-mount FP package; 2.5× higher R_θJA (125 °C/W vs. 50 °C/W); no avalanche rating specified	Used when vertical space is available and avalanche robustness is secondary; lacks E_AS validation for inductive loads.

Compared with STP55NF06L and IXTP50N055, IRFR2405TRR offers superior thermal performance via D-Pak's 1.4 °C/W R_θJC, verified 130 mJ avalanche capability, and lowest R_DS(on) in its class - making it optimal for compact, high-reliability surface-mount power stages.

Availability

IRFR2405TRR is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, hot-swap controllers, and LED driver power stages requiring stable component supply, consistent parametric performance, and long-term production support.

Supply support for IRFR2405TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's pioneering HEXFET® technology.

The IRFR2405TRR belongs to the Seventh Generation HEXFET® Power MOSFET product line, engineered specifically for high-current, surface-mount power conversion systems demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRFR2405TRR at 100°C case temperature?

The maximum continuous drain current is 40 A at T_C = 100°C with V_GS = 10 V. This derating reflects thermal limits of the D-Pak package and silicon; actual usable current depends on PCB copper area, airflow, and ambient temperature. At T_C = 25°C, it rises to 56 A, but package limitations cap practical continuous current at 30 A in standard FR-4 mounting.

Is IRFR2405TRR suitable for logic-level gate drive?

No - IRFR2405TRR is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve rated R_DS(on) of 0.0118 Ω. Driving it with 3.3 V or 5 V will result in significantly higher on-resistance and excessive conduction loss; a dedicated gate driver or level-shifter is required for microcontroller interfacing.

Does IRFR2405TRR have an integrated body diode, and what are its key parameters?

Yes - it includes a monolithic p-n junction body diode with V_SD = 1.3 V at I_S = 34 A and T_J = 25°C, reverse recovery time t_rr = 62 ns (typ), and Q_rr = 170 nC (typ). These values are measured with di/dt = 100 A/µs and confirm suitability for synchronous rectification, though softness is not specified - external Schottky may be preferred in ultra-low-noise applications.

What is the recommended PCB footprint and thermal layout for IRFR2405TRR?

Per IR application note AN-994, use a minimum 1" × 1" (25.4 mm × 25.4 mm) FR-4 copper pour connected to the exposed drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated). The pad should match the 6.73 mm × 6.35 mm outline; solder mask defined (SMD) stencil aperture is recommended. Avoid narrow traces - drain and source traces must carry >30 A and be ≥2 mm wide with 2 oz copper.

IRFR2405TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR2405TRR FAQ

1.How can I place an order for IRFR2405TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2405TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2405TRR reliable?

The price and inventory of IRFR2405TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2405TRR is usually 5 days.

3.What payment methods are accepted for IRFR2405TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2405TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2405TRR?

IRFR2405TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2405TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2405TRR?

For technical support, including IRFR2405TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2405TRR requirements.

6.How does Aetrix verify that IRFR2405TRR is sourced from the original manufacturer or authorized distributors?

All IRFR2405TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2405TRR meets industry standards.

7.What is the process for return or replacement of IRFR2405TRR?

All IRFR2405TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2405TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2405TRR part is unused and in its original packaging.

Return procedure for IRFR2405TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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