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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR2405TRRPBF

Name: IRFR2405TRRPBF
Brand: Infineon Technologies
SKU: IRFR2405TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR2405TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR2405TRRPBF.pdf

Description:: MOSFET N-CH 55V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR2405TRRPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 56 A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) surface-mount package, featuring 11.8 mΩ typical R_DS(on) at V_GS = 10 V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IRFR2405TRRPBF datasheet, IRFR2405TRRPBF pinout, IRFR2405TRRPBF application, or IRFR2405TRRPBF equivalent, key selection criteria include its 55 V V_DSS, 0.0118 Ω R_DS(on), 70 nC total gate charge, 130 mJ single-pulse avalanche energy, and thermal resistance of 1.4 °C/W junction-to-case - critical for thermally constrained PCB layouts.

Technical Context

This seventh-generation HEXFET device uses advanced silicon processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its fast switching (t_r = 130 ns, t_f = 78 ns) and low C_iss (2430 pF) support high-frequency operation up to 500 kHz in synchronous buck topologies.

The integrated body diode exhibits 62 ns reverse recovery time and 170 nC Q_rr at I_F = 34 A, enabling efficient freewheeling in hard-switched converters without external Schottky supplementation in moderate-duty applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in 48 V systems.
R_DS(on) @ V_GS=10 V	0.0118 Ω (typ) - Directly determines conduction loss: ~4.7 W at 56 A continuous drain current.
I_D @ T_C=25°C	56 A - Continuous current rating under ideal heatsinking; limited to 40 A at 100°C case temperature.
E_AS	130 mJ - Energy-handling capacity during unclamped inductive switching; enables robustness against load dump or short-circuit events.
Q_g	70 nC (typ) - Gate drive energy requirement; dictates driver strength needed for <100 ns switching transitions.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance; allows direct thermal interface to copper pour or heatsink for >90 W power dissipation.

Pinout & Package

The IRFR2405TRRPBF is housed in a D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Leads are gull-wing formed for vapor-phase or infrared reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 10 V for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper area.

Key Features

Feature	Design Value
Fully avalanche rated	Withstands 130 mJ single-pulse avalanche energy without degradation - eliminates need for external clamping in inductive load circuits.
Low R_DS(on)	0.0118 Ω typ at 10 V gate drive reduces conduction losses by >35% vs. prior-gen D-Pak MOSFETs at 34 A.
Fast switching	130 ns rise / 78 ns fall times enable >300 kHz PWM operation with minimal switching loss in SMPS designs.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); suitable for lead-free reflow without popcorn risk.

Applications

Industrial Motor Drives

Server DC-DC Converters

Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element handling 30–50 A peak currents at 20–50 kHz PWM frequency.

Use Value: 0.0118 Ω R_DS(on) limits I²R loss to <4.5 W at 45 A, reducing heatsink size by 40% vs. 0.022 Ω alternatives.

Use Scenario: Synchronous rectifier in 12 V → 1.2 V, 100 A VRM for Intel Xeon server CPUs.

IC Role / Device Role / Timing Role: High-current, low-V_DS output switch operating in continuous conduction mode at 400–600 kHz.

Use Value: 130 mJ E_AS ensures reliability during transient overloads without derating, supporting 95%+ efficiency targets.

Telecom Power Supplies

Automotive Body Control Modules

Use Scenario: Primary-side switch in 48 V telecom rectifier modules delivering 1.5 kW output.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in active clamp forward topology with 55 V bus rating.

Use Value: 55 V V_DSS provides 20% margin over 48 V nominal rail, accommodating surge transients up to 60 V without breakdown.

Use Scenario: Load switch for 12 V battery-fed solenoid drivers and LED matrix controls in BCM ECUs.

IC Role / Device Role / Timing Role: Protected high-side or low-side power switch with integrated avalanche energy absorption.

Use Value: 34 A I_AR and 11 mJ E_AR allow repetitive inductive turn-off without snubbers in 12 V/30 A solenoid loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 0.014 Ω R_DS(on), TO-220 package, higher R_θJA (62 °C/W)	Requires through-hole mounting and larger heatsink; unsuitable for space-constrained SMT designs	Prefer when board-level thermal management is impractical and mechanical robustness outweighs footprint constraints.
IXTP50N055T	55 V V_DSS, 0.0055 Ω R_DS(on), TO-220AB package, 3× lower R_DS(on) but 2.5× higher Q_g (175 nC)	Demands stronger gate driver; better for low-frequency, high-current linear regulation than high-frequency SMPS	Select only when conduction loss dominates design and switching frequency remains below 100 kHz.

Compared with STP55NF06L and IXTP50N055T, the IRFR2405TRRPBF uniquely balances low R_DS(on), moderate gate charge, and D-Pak thermal performance - making it optimal for compact, medium-frequency (200–500 kHz), 48 V-class power stages where PCB real estate and thermal interface efficiency are critical.

Availability

IRFR2405TRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, telecom power supplies, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR2405TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and qualify its HEXFET® power MOSFET portfolio for industrial, automotive, and computing applications.

The seventh-generation HEXFET line was designed specifically for high-efficiency, high-power-density switched-mode power supplies and motor control systems demanding low conduction loss, fast switching, and rugged avalanche performance in surface-mount form factors.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR2405TRRPBF supports 40 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and assumes adequate PCB copper area (≥1 in²) for heat spreading. Operation above this current requires forced air cooling or thermal vias to maintain T_J ≤ 175°C.

Is the body diode suitable for synchronous rectification?

No - the intrinsic body diode has 62 ns reverse recovery time and 170 nC Q_rr, making it unsuitable for synchronous rectification above ~100 kHz. It is intended for freewheeling in hard-switched topologies or protection clamping. For synchronous rectification, an external Schottky or dedicated SR controller with low-Q_rr MOSFETs is required.

Can IRFR2405TRRPBF be used in linear regulator applications?

It is not recommended for sustained linear operation. While rated for 110 W power dissipation at T_C = 25°C, its safe operating area (SOA) restricts linear use to brief pulses (<1 ms) at low V_DS. Continuous linear regulation risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA margin beyond 10 V × 10 A.

What is the gate threshold voltage range and how does it affect drive compatibility?

V_GS(th) is 2.0–4.0 V at I_D = 250 µA. This wide range means logic-level gate drivers (e.g., 3.3 V or 5 V) may not fully enhance the device - resulting in elevated R_DS(on) and conduction loss. A minimum 10 V gate drive is required to achieve the specified 0.0118 Ω on-resistance, necessitating a dedicated gate driver or bootstrap circuit in half-bridge configurations.

IRFR2405TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR2405TRRPBF FAQ

1.How can I place an order for IRFR2405TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2405TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2405TRRPBF reliable?

The price and inventory of IRFR2405TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2405TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR2405TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2405TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2405TRRPBF?

IRFR2405TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2405TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2405TRRPBF?

For technical support, including IRFR2405TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2405TRRPBF requirements.

6.How does Aetrix verify that IRFR2405TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR2405TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2405TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR2405TRRPBF?

All IRFR2405TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2405TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2405TRRPBF part is unused and in its original packaging.

Return procedure for IRFR2405TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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