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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR24N15DPBF

Name: IRFR24N15DPBF
Brand: Infineon Technologies
SKU: IRFR24N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR24N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR24N15DPBF.pdf

Description:: MOSFET N-CH 150V 24A DPAK

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Product details

Overview

IRFR24N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 24 A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, featuring 95 mΩ max R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 170 mJ single-pulse avalanche energy - designed for high-frequency DC-DC converters requiring robust switching performance and reliable unclamped inductive switching.

For engineers reviewing the IRFR24N15DPBF datasheet, IRFR24N15DPBF pinout, IRFR24N15DPBF application, or IRFR24N15DPBF equivalent, key selection criteria include its low Q_gd/Q_g ratio for reduced Miller-induced switching loss, fully characterized C_oss(eff) = 200 pF for hard-switching design accuracy, and validated 4.9 V/ns diode recovery dv/dt rating under high-di/dt conditions.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted drift region to achieve stable 150 V breakdown voltage (V_BRDSS ≥ 150 V) and temperature-stable R_DS(on) coefficient (0.18 V/°C). Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures TTL/CMOS-compatible drive while maintaining noise immunity.

The device integrates a co-packaged body diode with 1.5 V forward voltage (V_SD) at 14 A and 110 ns reverse recovery time (t_rr), enabling synchronous rectification and freewheeling in buck and half-bridge topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 120 V bus designs with 25% margin for transient overvoltage
R_DS(on) max	95 mΩ @ V_GS = 10 V, T_J = 25°C - enables <1.5 W conduction loss at 14 A continuous
I_D cont	24 A @ T_C = 25°C - rated for PCB-mount thermal interface with 1.1 °C/W R_θJC
Q_g	45 nC max - determines gate driver current requirement (~1.5 A peak for 30 ns rise)
E_AS	170 mJ - withstands unclamped inductive energy in 12 V–48 V systems up to L·I²/2 = 170 mJ
C_oss(eff)	200 pF - used directly in snubberless flyback and resonant LLC primary switch loss calculation
t_rr	110 ns - defines minimum dead-time setting in synchronous rectifiers to avoid shoot-through

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal conduction; thermally optimized for PCB copper pour mounting on 1–2 oz. FR-4.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground plane; carries full load current
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate; requires 10 V drive for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output (D)	Exposed metal pad - electrically and thermally connected to drain; must be isolated from other nets

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.38–0.58 (17/45 nC) - reduces Miller plateau duration and improves switching controllability
Fully characterized C_oss(eff)	200 pF from 0–120 V - eliminates iterative capacitor modeling in soft-switching design
Avalanche-rated	170 mJ single-pulse E_AS - allows operation in non-clamped inductive circuits without external protection
Lead-free construction	RoHS-compliant per J-STD-609 - meets IPC-J-STD-020 reflow profile Class 3A (260°C peak)
Body diode t_rr	110 ns with 100 A/µs di/dt - supports >500 kHz synchronous rectification in telecom PSUs

Applications

Telecom DC-DC Brick

Industrial Motor Drive Half-Bridge

Use Scenario: 48 V input, 12 V/20 A output isolated forward converter operating at 300 kHz.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch with active gate control and zero-voltage switching assist.

Use Value: 95 mΩ R_DS(on) limits conduction loss to ≤1.3 W; 45 nC Q_g enables clean 25 ns turn-on using 1.2 A gate driver.

Use Scenario: 24 V BLDC motor controller with 3-phase inverter stage driving 500 W fan load.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; handles PWM commutation at 20 kHz with 100% duty cycle capability.

Use Value: 17 A continuous rating at T_C = 100°C ensures thermal headroom; 110 ns t_rr prevents cross-conduction during fast phase transitions.

Server VRM High-Side Switch

Automotive LED Driver

Use Scenario: 12 V input, 1.2 V/120 A multiphase buck regulator for CPU core supply.

IC Role / Device Role / Timing Role: High-side synchronous FET in interleaved 4-phase topology; switched at 1 MHz.

Use Value: 200 pF C_oss(eff) enables accurate dead-time optimization; 150 V V_DS accommodates 12 V rail transients up to 15 V.

Use Scenario: 24 V automotive LED headlamp driver with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: Current-sinking switch controlling 3 A LED string; operates in linear and saturated modes.

Use Value: 170 mJ E_AS sustains inductive kickback during open-wire fault; 1.5 V V_SD minimizes forward drop in analog dimming mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N15F6	150 V, 24 A, 90 mΩ R_DS(on), 38 nC Q_g, TO-220 package	Higher R_θJA (62 °C/W vs. 50 °C/W), no exposed drain pad	Select when through-hole assembly or higher single-pulse avalanche margin (220 mJ) is required
IXTP24N15X2	150 V, 24 A, 85 mΩ R_DS(on), 42 nC Q_g, TO-220AB package	Lower C_oss(eff) (175 pF), but no specified t_rr or E_AS data	Select when lower gate charge dominates over diode recovery performance in high-frequency ZVS designs

Compared with STP24N15F6 and IXTP24N15X2, IRFR24N15DPBF uniquely combines D-Pak thermal efficiency, verified 110 ns t_rr, and published 200 pF C_oss(eff) - making it preferred for space-constrained, high-reliability DC-DC converters where body diode behavior and layout thermal management are critical.

Availability

IRFR24N15DPBF is available at Aetrix Electronics and suitable for telecom DC-DC bricks, industrial motor drive half-bridges, and automotive LED drivers requiring stable component supply across extended production lifecycles.

Supply support for IRFR24N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains full product continuity, qualification, and technical support for the HEXFET® portfolio.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies and motor control systems demanding ruggedness, predictable avalanche behavior, and low gate-drive power consumption.

FAQ

What is the maximum recommended gate drive voltage for IRFR24N15DPBF?

The absolute maximum gate-to-source voltage is ±30 V, but the device is fully enhanced at V_GS = 10 V and exhibits optimal R_DS(on) and switching trade-offs between 10 V and 15 V. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and Q_g-related losses.

Does IRFR24N15DPBF support paralleling for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (0.18 V/°C) ensures inherent current sharing when multiple units are paralleled on a common heatsink. Layout symmetry and individual gate resistors (≥10 Ω) are required to suppress oscillation and ensure balanced dynamic current distribution.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for continuous source current up to 14 A at T_J = 25°C and features 110 ns t_rr with 100 A/µs di/dt. For sustained operation above 100°C junction temperature, derate I_S per Fig. 9 in the datasheet and verify thermal margin with measured V_SD and t_rr degradation.

How does the effective output capacitance (C_oss(eff)) differ from standard C_oss?

C_oss(eff) = 200 pF is measured dynamically from V_DS = 0 V to 120 V under zero-gate-voltage conditions and reflects the nonlinear capacitance integral used in hard-switching loss calculation. Standard C_oss values (e.g., 220 pF at V_DS = 25 V) are static snapshots and underestimate energy stored in the drain capacitance during full-range switching.

IRFR24N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR24N15DPBF FAQ

1.How can I place an order for IRFR24N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR24N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR24N15DPBF reliable?

The price and inventory of IRFR24N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR24N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFR24N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR24N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR24N15DPBF?

IRFR24N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR24N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR24N15DPBF?

For technical support, including IRFR24N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR24N15DPBF requirements.

6.How does Aetrix verify that IRFR24N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFR24N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR24N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFR24N15DPBF?

All IRFR24N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR24N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR24N15DPBF part is unused and in its original packaging.

Return procedure for IRFR24N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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