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Infineon Technologies IRFR2905ZPBF
- Part No.:
- IRFR2905ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR2905ZPBF.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,048
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Product details
Overview
IRFR2905ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V VDSS, 42 A continuous drain current at TC = 25°C, and 14.5 mΩ RDS(on) at VGS = 10 V. It features 175°C maximum junction temperature, fast switching (tr = 66 ns, tf = 35 ns), and tested repetitive avalanche capability up to Tjmax. It is used in DC-DC converters, motor control H-bridges, and industrial power supplies.
For engineers reviewing the IRFR2905ZPBF datasheet, IRFR2905ZPBF pinout, IRFR2905ZPBF application, or IRFR2905ZPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust avalanche rating (EAS = 59 mJ), thermal performance (RθJC = 1.38 °C/W), and body diode recovery characteristics (trr = 23–35 ns).
Technical Context
This MOSFET employs advanced planar silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its gate charge profile (Qg = 29–44 nC, Qgd = 12 nC) supports efficient high-frequency switching in hard-switched topologies. The integral body diode exhibits low forward voltage (VSD ≤ 1.3 V at 36 A) and controlled reverse recovery (Qrr = 16–24 nC).
The device is characterized for operation across –55°C to +175°C junction range, with RDS(on) exhibiting <2× increase from 25°C to 125°C (normalized to ~1.5× at 175°C). Thermal design is enabled by validated transient impedance data (ZthJC) and linear derating (0.72 W/°C above 25°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V nominal bus systems with margin. |
| RDS(on) @ VGS = 10 V | 14.5 mΩ max - Determines conduction loss in high-current paths; yields ≤2.5 W dissipation at 42 A. |
| ID @ TC = 25°C | 42 A - Continuous drain current limited by silicon; requires heatsinking above ~25°C case temperature. |
| tr/tf | 66 ns / 35 ns - Fast edge rates enable >100 kHz switching in SMPS without excessive switching loss penalty. |
| EAS | 59 mJ - Single-pulse avalanche energy rating; enables reliable unclamped inductive switching in motor drives. |
| Qg | 29–44 nC - Total gate charge defines driver strength requirement; compatible with standard gate drivers (e.g., IR2110). |
| Tjmax | 175°C - Enables operation in high-ambient environments (e.g., enclosed industrial enclosures) with proper thermal design. |
Pinout & Package
IRFR2905ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal conduction. Pin assignment is standardized across D-Pak N-channel MOSFETs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to exposed copper pad; must be soldered to PCB copper pour for thermal and electrical integrity. |
| Source | Reference node for gate drive and current return | Low-inductance connection critical for stable switching; internal source inductance LS = 7.5 nH affects ringing. |
| Gate | Control input for channel modulation | High-impedance CMOS-compatible input; requires low-impedance gate driver to manage Qg = 29–44 nC efficiently. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 14.5 mΩ at 10 V drive reduces conduction loss in high-current 48 V systems, improving efficiency over legacy 20+ mΩ parts. |
| 175°C junction rating | Enables operation in sealed or high-ambient environments without derating, supporting industrial and automotive under-hood designs. |
| Tested repetitive avalanche | Rated for repeated unclamped inductive switching up to Tjmax; eliminates need for external snubbers in brushed motor H-bridges. |
| Fast body diode recovery | trr = 23–35 ns and Qrr = 16–24 nC minimize shoot-through risk and EMI in synchronous rectification and half-bridge freewheeling. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 48 V input to 12 V/20 A output buck regulator in telecom power shelf. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 250 kHz with 10 V gate drive. Use Value: Low RDS(on) (14.5 mΩ) limits conduction loss to <1.3 W at full load, enabling compact thermal design without forced air. |
Use Scenario: Half-bridge driver for 36 V, 30 A brushed motor in automated guided vehicle (AGV) motion control. IC Role / Device Role / Timing Role: Low-side switch with body diode conducting freewheel current during PWM off-time. Use Value: Tested repetitive avalanche allows safe inductive turn-off without external clamping, reducing BOM count and board space. |
| Industrial PLC Output Module | LED Constant-Current Driver |
Use Scenario: Solid-state relay replacement in 24 V DC output module switching resistive and inductive loads. IC Role / Device Role / Timing Role: Low-side load switch with integrated protection against inductive kickback. Use Value: 175°C Tjmax and 59 mJ EAS ensure reliability across wide ambient ranges (–40°C to +85°C cabinet) without derating. |
Use Scenario: Dimmable constant-current LED driver for high-bay lighting (48 V bus, 1.5 A string). IC Role / Device Role / Timing Role: PWM-controlled current sink switch in linear+PWM hybrid topology. Use Value: Fast switching (tf = 35 ns) and low gate charge support clean dimming waveforms with minimal current overshoot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 12 mΩ @ 10 V, but VDSS = 60 V; higher Qg = 55 nC; TO-220 package. | Requires through-hole mounting and larger heatsink; better for lower-frequency, higher-voltage margin designs. | Choose when higher voltage margin (60 V) and lower RDS(on) outweigh SMT assembly and thermal advantages of D-Pak. |
| IXTP50N055T | RDS(on) = 5.5 mΩ @ 10 V, VDSS = 55 V; TO-220 package; no avalanche rating specified. | Lacks documented repetitive avalanche capability; unsuitable for unclamped inductive switching without external protection. | Prefer only in purely resistive or clamped inductive loads where ultra-low conduction loss is primary concern. |
Compared with STP55NF06L and IXTP50N055T, IRFR2905ZPBF offers optimal balance of SMT manufacturability, proven avalanche ruggedness, and thermal performance in D-Pak-critical for space-constrained, high-reliability industrial power stages.
Availability
IRFR2905ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and industrial PLC output modules requiring stable component supply and long-term lifecycle support.
Supply support for IRFR2905ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering HEXFET® technology.
The IRFR2905ZPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and solid-state power distribution.
FAQ
Is IRFR2905ZPBF lead-free and RoHS compliant?
Yes, IRFR2905ZPBF is lead-free and RoHS compliant per EU Directive 2011/65/EU. The "PbF" suffix explicitly denotes lead-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/85% RH.
What is the maximum recommended gate drive voltage?
The absolute maximum gate-to-source voltage is ±20 V. For reliable operation, gate drive should be limited to 10–15 V: 10 V ensures full enhancement (RDS(on) spec met), while 15 V provides margin against threshold shift at high temperature without risking oxide stress.
Can IRFR2905ZPBF be paralleled for higher current handling?
Yes, it can be paralleled due to its positive RDS(on) temperature coefficient-ensuring current sharing improves with temperature rise. Use matched gate resistors (≤1 Ω) and symmetrical PCB layout to minimize loop inductance imbalance and prevent oscillation.
Does the body diode support synchronous rectification?
No-the body diode is optimized for freewheeling, not synchronous rectification. Its reverse recovery time (trr = 23–35 ns) and Qrr (16–24 nC) are significantly higher than dedicated synchronous rectifier MOSFETs, making it unsuitable for high-frequency (>500 kHz) SR applications.
IRFR2905ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1380 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR2905ZPBF FAQ
1.How can I place an order for IRFR2905ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR2905ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR2905ZPBF reliable?
The price and inventory of IRFR2905ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2905ZPBF is usually 5 days.
3.What payment methods are accepted for IRFR2905ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2905ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR2905ZPBF?
IRFR2905ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR2905ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR2905ZPBF?
For technical support, including IRFR2905ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2905ZPBF requirements.
6.How does Aetrix verify that IRFR2905ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFR2905ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2905ZPBF meets industry standards.
7.What is the process for return or replacement of IRFR2905ZPBF?
All IRFR2905ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2905ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR2905ZPBF part is unused and in its original packaging.
Return procedure for IRFR2905ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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