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Infineon Technologies IRFR2905ZTRLPBF
- Part No.:
- IRFR2905ZTRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR2905ZTRLPBF.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,502
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Product details
Overview
IRFR2905ZTRLPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55V VDSS, 42A continuous drain current at TC = 25°C, and 14.5 mΩ RDS(on) at VGS = 10V. It features 175°C maximum junction temperature, fast switching (tr = 66 ns, tf = 35 ns), and rated repetitive avalanche capability - optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.
For engineers reviewing the IRFR2905ZTRLPBF datasheet, IRFR2905ZTRLPBF pinout, IRFR2905ZTRLPBF application, or IRFR2905ZTRLPBF equivalent, key selection criteria include its low RDS(on) at 10V gate drive, body diode recovery performance (trr = 23–35 ns, Qrr = 16–24 nC), thermal robustness (RθJC = 1.38 °C/W), and unclamped inductive switching reliability up to Tjmax.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining ruggedness under transient stress. Its gate charge profile (Qg = 29–44 nC, Qgd = 12 nC) supports efficient hard-switching operation with moderate gate drive strength. The integral body diode exhibits low forward voltage (VSD ≤ 1.3 V at 36 A) and controlled reverse recovery behavior critical for synchronous rectification and H-bridge commutation.
The device's safe operating area (SOA) is defined by both RDS(on)-limited conduction and transient thermal limits, with validated repetitive avalanche energy (EAR) up to 60 mJ at TJ = 25°C. Thermal impedance data (ZthJC) enables accurate pulse-power derating in short-duration, high-current applications such as solenoid drivers and UPS inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and half-bridge topologies. |
| RDS(on) @ VGS = 10 V | 14.5 mΩ max - Directly determines I²R conduction loss at full load; enables <1.5 W dissipation at 42 A DC. |
| ID @ TC = 25°C | 42 A - Continuous current rating under ideal heatsink conditions; defines minimum PCB copper area and thermal pad design. |
| tr/tf | 66 ns / 35 ns - Fast edge rates reduce switching transition time, lowering overlap loss in PWM stages operating up to 200 kHz. |
| Qg | 44 nC max - Total gate charge dictates required gate driver peak current (e.g., ≥3 A for 100 ns turn-on with 15 Ω gate resistor). |
| EAS | 240 mJ - Single-pulse avalanche energy rating confirms robustness against inductive kickback in relay/motor drive circuits. |
| TJ max | 175°C - Enables operation in sealed enclosures or high-ambient environments without forced air cooling. |
Pinout & Package
IRFR2905ZTRLPBF uses the surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a single-row configuration compatible with standard reflow profiles and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal, connected to internal die substrate | Electrically and thermally tied to exposed copper pad; must be soldered to large PCB thermal plane for RθJC = 1.38 °C/W performance. |
| Source (S) | Reference node for gate drive and current return path | Low-inductance source connection critical for minimizing ground bounce during fast switching; LS = 7.5 nH typical. |
| Gate (G) | Control electrode modulating channel conductivity | High-impedance input requiring stable 10 V drive; RG = 1.3 Ω intrinsic resistance affects gate ringing susceptibility. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 11.1 mΩ typical at VGS = 10 V - Reduces conduction loss by >30% vs. legacy 55 V MOSFETs in same package, improving efficiency in 12–48 V systems. |
| Repetitive avalanche rated | Validated EAR up to 60 mJ at TJ = 25°C - Eliminates need for external snubbers in inductive load switching, simplifying BOM and layout. |
| Fast body diode recovery | trr = 23–35 ns, Qrr = 16–24 nC - Minimizes reverse recovery loss and EMI in synchronous rectifiers and bidirectional converters. |
| 175°C junction rating | Enables operation at full current in ambient temperatures up to 105°C with proper PCB thermal design - suitable for enclosed industrial drives. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V/20 A for industrial control modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–200 kHz PWM frequency. Use Value: Low RDS(on) and fast switching reduce total power loss to <2.1 W, enabling compact heatsink-free design. |
Use Scenario: Half-bridge H-bridge driving 24 V, 15 A brushed motors in automated gate actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with body diode freewheeling. Use Value: Rated repetitive avalanche and low VSD ensure reliable commutation without external flyback diodes. |
| Uninterruptible Power Supply (UPS) | Solenoid & Relay Driver |
Use Scenario: Inverter stage converting 36 V battery to 120 VAC output in line-interactive UPS units. IC Role / Device Role / Timing Role: Output bridge switch subjected to unclamped inductive transients during transfer switching. Use Value: 240 mJ EAS and SOA compliance allow direct replacement of discrete protection components. |
Use Scenario: High-current (30 A peak) solenoid activation in pneumatic valve controllers. IC Role / Device Role / Timing Role: Single-ended switch controlling inductive load with fast turn-off to prevent contact arcing. Use Value: 35 ns fall time and 175°C rating support 100% duty cycle operation with minimal thermal margin loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 12 mΩ @ 10 V, but VDSS = 60 V; higher Qg = 65 nC; TO-220 package only | Requires through-hole assembly and larger heatsink due to higher thermal resistance (RθJA ≈ 62 °C/W) | Prefer when higher voltage margin is needed and board space allows TO-220 mounting. |
| IXTP50N055T | VDSS = 55 V, RDS(on) = 11.5 mΩ, but TO-220 package; no specified repetitive avalanche rating | Lacks documented EAR validation - unsuitable for unclamped inductive switching without external clamping. | Select only in non-avalanche-prone applications where lowest RDS(on) dominates over ruggedness. |
Compared with STP55NF06L and IXTP50N055T, IRFR2905ZTRLPBF offers superior thermal performance in surface-mount form factor, verified repetitive avalanche capability, and balanced gate charge for medium-frequency switching - making it optimal for space-constrained, high-reliability industrial power stages.
Availability
IRFR2905ZTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, uninterruptible power supplies, and solenoid control systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant lead-free packaging.
Supply support for IRFR2905ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.
This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, medium-voltage industrial switching applications where conduction efficiency, thermal resilience, and transient ruggedness are critical.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFR2905ZTRLPBF supports 24 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and requires adequate PCB copper area (≥200 mm² per mm of trace width) to maintain junction temperature below 175°C under sustained load.
Does this MOSFET require a gate resistor for stability?
Yes - a series gate resistor (typically 5–15 Ω) is recommended to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 120 pF) interacting with PCB trace inductance. Without it, ringing can exceed VGS absolute maximum (±20 V) and cause premature failure during fast switching transitions.
Is the body diode suitable for synchronous rectification?
The integrated body diode has VSD ≤ 1.3 V at 36 A and trr = 23–35 ns, making it usable in low-frequency synchronous rectification (≤50 kHz). However, for high-frequency (>100 kHz) or zero-voltage-switching topologies, an external Schottky diode is preferred due to lower Qrr and reduced recovery loss.
Can IRFR2905ZTRLPBF replace IRFR2905PbF in existing designs?
Yes - IRFR2905ZTRLPBF is the lead-free, tape-and-reel packaged version of IRFR2905PbF, with identical electrical specifications, pinout, and thermal characteristics. No layout or firmware changes are required; only reflow profile adjustments may be needed to accommodate Pb-free soldering temperatures (peak ~260°C).
IRFR2905ZTRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1380 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR2905ZTRLPBF FAQ
1.How can I place an order for IRFR2905ZTRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR2905ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR2905ZTRLPBF reliable?
The price and inventory of IRFR2905ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2905ZTRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR2905ZTRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2905ZTRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR2905ZTRLPBF?
IRFR2905ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR2905ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR2905ZTRLPBF?
For technical support, including IRFR2905ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2905ZTRLPBF requirements.
6.How does Aetrix verify that IRFR2905ZTRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR2905ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2905ZTRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR2905ZTRLPBF?
All IRFR2905ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2905ZTRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR2905ZTRLPBF part is unused and in its original packaging.
Return procedure for IRFR2905ZTRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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