Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFR2905ZTRR

Part No.:
IRFR2905ZTRR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR2905ZTRR.pdf
Description:
MOSFET N-CH 55V 42A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,265

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR2905ZTRR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V VDSS, 14.5 mΩ RDS(on) at VGS = 10 V, and 42 A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (tr = 66 ns, tf = 35 ns), and rated repetitive avalanche capability - deployed in engine control modules, DC-DC converters, and motor drive stages.

For engineers reviewing the IRFR2905ZTRR datasheet, IRFR2905ZTRR pinout, IRFR2905ZTRR application, or IRFR2905ZTRR equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust 175°C thermal rating, body diode recovery performance (trr = 23–35 ns), and automotive qualification per AEC-Q101.

Technical Context

This MOSFET uses advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining high avalanche ruggedness. Its gate threshold voltage (2.0–4.0 V) supports standard 5 V and 10 V logic-level drive, and its 1.38 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking.

The device integrates a fast, low-VSD (≤1.3 V) body diode with Qrr = 16–24 nC and trr = 23–35 ns under specified conditions (IF = 36 A, dI/dt = 100 A/µs). Its safe operating area (SOA) is defined up to 100 µs single-pulse, limited by RDS(on) at high VDS.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 55 V - Maximum drain-source blocking voltage before avalanche onset; suitable for 48 V automotive systems and 24 V industrial rails.
RDS(on) @ VGS = 10 V 14.5 mΩ max - Enables ≤0.6 W conduction loss at 42 A, reducing thermal load in high-current switching nodes.
ID @ TC = 25°C 42 A - Continuous drain current rating with PCB-mount heatsinking; derates linearly above 25°C case temperature.
tr/tf 66 ns / 35 ns - Fast edge rates support >100 kHz PWM operation with minimized switching losses in buck and half-bridge topologies.
TJ max 175°C - Extended junction temperature rating allows operation in under-hood environments without forced cooling.
EAS 59 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive turn-off transients in motor and solenoid drives.
Qg 44 nC max - Gate charge determines driver strength requirement; compatible with standard gate drivers (e.g., IR2104, UCC27531).

Pinout & Package

IRFR2905ZTRR is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (D), Source (S), and Gate (G), with Drain electrically connected to the tab.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main power output terminal Electrically tied to copper tab; must be soldered to large PCB copper pour for thermal dissipation and low-inductance return path.
Source Reference node for gate drive and current sensing Serves as common return for load current and gate driver ground; low-inductance layout critical for stable switching.
Gate Control input for channel conduction High-impedance MOS gate requiring controlled slew rate; susceptible to ringing if not properly terminated with series resistor (typically 5–22 Ω).

Key Features

Feature Design Value
Automotive qualification AEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical stress in automotive under-hood applications.
Repetitive avalanche rating Rated for repeated unclamped inductive switching events up to TJmax - Eliminates need for external snubbers in relay/motor drive circuits.
Ultra-low RDS(on) 11.1 mΩ typical at VGS = 10 V - Reduces I²R losses by >30% vs. legacy 55 V MOSFETs, improving efficiency in 12–48 V DC-DC stages.
Fast body diode trr = 23–35 ns, Qrr = 16–24 nC - Minimizes reverse recovery loss and EMI in synchronous rectification and freewheeling paths.
Thermal robustness RθJC = 1.38 °C/W - Enables >40 W power dissipation with modest heatsinking, supporting compact high-current designs.

Applications

Engine Control Unit (ECU) Fuel Injector Driver 48 V Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with peak currents up to 36 A.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization/de-energization; operates at 10–20 Hz with precise pulse-width control.

Use Value: 14.5 mΩ RDS(on) minimizes coil heating during dwell time; 175°C rating ensures reliability in hot ECU enclosures near the engine block.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V bidirectional DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) hard-switched N-channel switch in phase-shifted full-bridge topology.

Use Value: Fast tr/tf and low Qg reduce switching loss; body diode trr < 35 ns prevents shoot-through during dead-time transitions.

Electric Power Steering (EPS) Motor Phase Leg Industrial 24 V BLDC Motor Inverter Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless motor in EPS system, handling 30–40 A RMS phase current.

IC Role / Device Role / Timing Role: High-side and low-side switching element in H-bridge configuration; requires robust avalanche capability during regenerative braking.

Use Value: Rated repetitive avalanche energy (EAR) supports safe energy absorption during motor back-EMF spikes without external clamping.

Use Scenario: Output stage in compact 24 V BLDC motor controller for automated guided vehicles (AGVs) and factory robotics.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; driven by isolated gate driver with 10 V gate voltage.

Use Value: 42 A continuous current rating at TC = 25°C enables 100% duty-cycle operation with minimal heatsink; D-Pak footprint simplifies automated assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL100N5LF6AG 60 V VDSS, 9.5 mΩ RDS(on), 100 A ID, PowerFLAT 5x6 package, no AEC-Q101 certification Higher current capacity but lacks automotive qualification; requires larger PCB area and different thermal interface Preferred for non-automotive 48 V systems where higher current headroom and lower RDS(on) outweigh qualification needs.
ON Semiconductor NTMFS5C673NL 60 V VDSS, 10.5 mΩ RDS(on), 52 A ID, SO-8FL package, AEC-Q101 qualified Smaller footprint and lower gate charge (34 nC), but lower avalanche rating (EAS = 32 mJ) and 150°C TJmax Best for space-constrained automotive modules needing faster switching and smaller layout, where avalanche stress is mitigated by circuit design.

Compared with STL100N5LF6AG and NTMFS5C673NL, IRFR2905ZTRR offers the highest junction temperature rating (175°C) and verified repetitive avalanche capability - making it uniquely suited for thermally aggressive, inductive-load automotive applications where transient robustness is non-negotiable.

Availability

IRFR2905ZTRR is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, and electric power steering systems requiring stable component supply across extended automotive product lifecycles.

Supply support for IRFR2905ZTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap devices.

This device belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is IRFR2905ZTRR pin-compatible with IRFR2905PBF?

Yes - both share identical D-Pak (TO-252) package outline, pin assignment (Drain-Tab, Source, Gate), and mechanical footprint. IRFR2905ZTRR is the tape-and-reel version of IRFR2905PBF; electrical specifications and thermal characteristics are identical per datasheet Rev. D.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-to-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operating at 12–15 V provides margin for RDS(on) reduction without significant increase in Qg or risk of gate oxide stress under transient conditions.

Does IRFR2905ZTRR require a gate resistor for stability?

Yes - a series gate resistor (5–22 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 120 pF) and PCB trace inductance. Without it, ringing can exceed VGS limits and cause erratic switching or device failure.

Can IRFR2905ZTRR replace IRFZ44N in automotive designs?

No - IRFZ44N is not AEC-Q101 qualified, has higher RDS(on) (17.5 mΩ), lower TJmax (175°C vs. 175°C same, but IRFZ44N lacks automotive test validation), and inferior avalanche rating. IRFR2905ZTRR meets automotive reliability requirements that IRFZ44N does not satisfy.

IRFR2905ZTRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1380 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR2905ZTRR FAQ

1.How can I place an order for IRFR2905ZTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2905ZTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2905ZTRR reliable?

The price and inventory of IRFR2905ZTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2905ZTRR is usually 5 days.

3.What payment methods are accepted for IRFR2905ZTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2905ZTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2905ZTRR?

IRFR2905ZTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2905ZTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2905ZTRR?

For technical support, including IRFR2905ZTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2905ZTRR requirements.

6.How does Aetrix verify that IRFR2905ZTRR is sourced from the original manufacturer or authorized distributors?

All IRFR2905ZTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2905ZTRR meets industry standards.

7.What is the process for return or replacement of IRFR2905ZTRR?

All IRFR2905ZTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2905ZTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2905ZTRR part is unused and in its original packaging.

Return procedure for IRFR2905ZTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR2905ZTRR Tags

  • IRFR2905ZTRR
  • IRFR2905ZTRR PDF
  • IRFR2905ZTRR Datasheet
  • IRFR2905ZTRR Specifications
  • IRFR2905ZTRR Images
  • Infineon Technologies
  • Infineon Technologies IRFR2905ZTRR
  • Buy IRFR2905ZTRR
  • IRFR2905ZTRR Price
  • IRFR2905ZTRR Distributor
  • IRFR2905ZTRR Supplier
  • IRFR2905ZTRR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER