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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR2905ZTRRPBF

Name: IRFR2905ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR2905ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR2905ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR2905ZTRRPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRFR2905ZTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DS, 14.5 mΩ R_DS(on) at V_GS = 10 V, and 42 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 66 ns, t_f = 35 ns), and rated repetitive avalanche capability - deployed in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR2905ZTRRPBF datasheet, IRFR2905ZTRRPBF pinout, IRFR2905ZTRRPBF application, or IRFR2905ZTRRPBF equivalent, key selection criteria include its low R_DS(on) × Q_g figure of merit (≈425 mΩ·nC), body diode recovery performance (t_rr = 23–35 ns, Q_rr = 16–24 nC), thermal resistance (R_θJC = 1.38 °C/W), and unclamped inductive switching robustness up to E_AS = 59 mJ.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize specific on-resistance while maintaining high avalanche ruggedness. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 5 V and 10 V logic-level drive, and its transconductance (g_fs = 20 S typ.) ensures stable gain across operating temperatures.

The device integrates a co-packaged, optimized body diode with low forward voltage (V_SD ≤ 1.3 V at I_S = 36 A) and controlled reverse recovery (Q_rr = 16–24 nC), enabling reliable operation in hard-switched and synchronous rectifier topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in off-state; suitable for 48 V nominal bus systems with margin.
R_DS(on)	14.5 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 42 A, critical for high-efficiency power stages.
I_D (cont)	42 A @ T_C = 25°C - Confirmed silicon-limited rating; derates to 24 A at T_C = 100°C per linear derating factor.
Q_g	44 nC max - Total gate charge determines driver strength requirement; enables efficient 100–500 kHz switching with moderate gate drivers.
E_AS	59 mJ (tested) - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients in motor control.
t_r/t_f	66 ns / 35 ns - Fast edge rates reduce switching losses and EMI generation in high-frequency SMPS designs.
T_J max	175°C - Extended thermal limit allows higher power density and reduced heatsinking in space-constrained applications.

Pinout & Package

IRFR2905ZTRRPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package provides low R_θJC = 1.38 °C/W and is compatible with standard PCB reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground or source of synchronous FET; carries full load current and body diode return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <200 nA leakage; driven by dedicated gate driver to ensure fast, low-loss switching transitions.
Pin 3 (Drain)	Drain terminal (D)	High-side power node; electrically and thermally connected to exposed copper pad; must be routed with low-inductance layout for avalanche integrity.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	14.5 mΩ max at 10 V drive - reduces conduction loss by >30% vs. legacy 55 V MOSFETs in same package, improving efficiency in 12–48 V systems.
Repetitive avalanche rating	Rated per JEDEC JESD24-11 - enables reliable operation under unclamped inductive switching without external snubbers in motor gate drivers.
Fast body diode recovery	t_rr = 23–35 ns, Q_rr = 16–24 nC - minimizes reverse recovery loss and shoot-through risk in synchronous buck and half-bridge configurations.
175°C junction rating	Extended thermal limit - supports compact thermal design with reduced heatsink area or higher ambient temperature operation (e.g., automotive under-hood).
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile - compatible with standard Pb-free assembly processes without solder joint reliability degradation.

Applications

DC-DC Synchronous Rectifier

Brushless DC Motor Driver

Use Scenario: High-current output stage of isolated 48 V-to-12 V telecom or server PSU using synchronous rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode; switched complementary to primary-side FET with precise dead-time control.

Use Value: Reduces conduction loss by ~60% vs. 40 V Schottky, enabling >95% efficiency at 40 A load with minimal thermal rise.

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for industrial fans or e-bike controllers.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element in low-side position; handles commutation current and body-diode freewheeling.

Use Value: Avalanche rating and fast t_r/t_f prevent failure during phase-current reversal transients; R_DS(on) limits I²R heating at 30 A RMS.

Industrial LED Driver

Hot-Swap Controller

Use Scenario: Constant-current switch in high-power constant-voltage/constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink for series-connected LED strings; operates in linear and saturated regions during dimming.

Use Value: 175°C T_J rating and low R_DS(on) allow direct mounting on aluminum PCB without heatsink, simplifying thermal management.

Use Scenario: Inrush current limiter and fault protection switch in 48 V backplane hot-swap module.

IC Role / Device Role / Timing Role: Main pass FET in ideal diode or OR-ing configuration; subjected to repeated current surges and reverse polarity events.

Use Value: Rated repetitive avalanche and low gate charge enable fast turn-on/off during fault detection, limiting energy dissipation during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V but V_DS = 60 V; higher Q_g = 65 nC; TO-220 package only.	Larger footprint and higher gate drive demand; less suitable for high-density D-Pak layouts.	Prefer when higher voltage margin (60 V) is required and through-hole mounting is acceptable.
IXTP50N055T	V_DS = 55 V, R_DS(on) = 11.5 mΩ, but TO-220FP package; no rated avalanche energy spec.	No documented E_AS rating; requires external avalanche protection in inductive loads.	Select only in non-inductive, low-dV/dt applications where ultra-low R_DS(on) outweighs ruggedness needs.

Compared with STP55NF06L and IXTP50N055T, IRFR2905ZTRRPBF uniquely combines D-Pak form factor, verified 59 mJ avalanche rating, and balanced Q_g/R_DS(on) for space-constrained, inductive-load applications requiring both efficiency and transient robustness.

Availability

IRFR2905ZTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, industrial LED drivers, and hot-swap modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR2905ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering HEXFET® technology.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and transportation systems where thermal resilience and switching ruggedness are critical.

FAQ

Is IRFR2905ZTRRPBF logic-level compatible?

Yes - its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it achieves full enhancement (R_DS(on) ≤ 14.5 mΩ) with 10 V gate drive. While it conducts partially at 5 V (typical I_D ≈ 12 A at V_GS = 5 V), optimal performance requires ≥8 V drive per datasheet Fig. 3 and Fig. 10.

What is the maximum safe continuous current at 100°C case temperature?

Per Absolute Maximum Ratings table, continuous drain current drops to 24 A at T_C = 100°C with V_GS = 10 V. This reflects silicon-limited conduction under thermal constraint, not package limitation - the package-limited rating remains 42 A only at T_C = 25°C.

Does IRFR2905ZTRRPBF have a specified SOA curve?

Yes - Figure 8 provides the Maximum Safe Operating Area (SOA) for single-pulse operation, bounded by R_DS(on), peak current (I_DM = 168 A), and thermal limits. At 100 V_DS, the safe continuous current is limited to ~1.5 A; at 10 V_DS, it supports up to 40 A for 10 ms pulses.

Can IRFR2905ZTRRPBF replace IRFR2905PbF in existing designs?

Yes - IRFR2905ZTRRPBF is the lead-free, RoHS-compliant, tape-and-reel packaged successor to IRFR2905PbF. Electrical specifications, pinout, thermal characteristics, and package dimensions are identical; only the plating (matte tin vs. lead-based) and packaging differ per IRF PD-95943B revision history.

IRFR2905ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR2905ZTRRPBF FAQ

1.How can I place an order for IRFR2905ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2905ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2905ZTRRPBF reliable?

The price and inventory of IRFR2905ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2905ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR2905ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2905ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2905ZTRRPBF?

IRFR2905ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2905ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2905ZTRRPBF?

For technical support, including IRFR2905ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2905ZTRRPBF requirements.

6.How does Aetrix verify that IRFR2905ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR2905ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2905ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR2905ZTRRPBF?

All IRFR2905ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2905ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2905ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR2905ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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