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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3103TRR

Name: IRFR3103TRR
Brand: Infineon Technologies
SKU: IRFR3103TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3103TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3103TRR.pdf

Description:: MOSFET N-CH 400V 1.7A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,694

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Product details

Overview

IRFR3103TRR from Infineon Technologies is a 400 V, 1.7 A N-channel enhancement-mode MOSFET in DPAK (TO-252) package, featuring 2.8 Ω R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and optimized for high-voltage DC-DC converters and industrial power switching. It serves as a primary switch in offline SMPS and LED driver flyback stages.

For engineers reviewing the IRFR3103TRR datasheet, IRFR3103TRR pinout, IRFR3103TRR application, or IRFR3103TRR equivalent, key selection criteria include breakdown voltage margin, gate charge (Q_g = 12 nC), safe operating area (SOA) under repetitive avalanche, thermal resistance (R_θJA = 60 °C/W), and lead-free DPAK footprint compatibility with automated assembly.

Technical Context

This MOSFET employs planar silicon technology with field-stop trench gate structure to achieve stable 400 V V_DSS and low conduction loss. Its 1.7 A continuous drain current rating is specified at T_C = 25 °C with derating above 25 °C, and it supports unclamped inductive switching up to 100 mJ at T_J = 25 °C.

The device uses standard logic-level gate drive (V_GS(th) = 2–4 V), exhibits fast switching with t_rise = 12 ns and t_fall = 15 ns at I_D = 1 A, and maintains SOA compliance across pulse widths from 10 μs to 10 ms per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	400 V - Withstands 400 V drain-source blocking voltage before avalanche onset; enables use in 230 VAC input-derived 380 VDC bus applications.
R_DS(on) @ V_GS = 10 V	2.8 Ω - Conduction loss of 8.1 mW at 1.7 A ID; determines thermal rise in continuous linear-mode operation.
Q_g	12 nC - Total gate charge required for full turn-on; impacts driver IC sizing and switching loss in 50–500 kHz SMPS designs.
E_AS	100 mJ - Unclamped inductive switching energy rating at T_J = 25 °C; defines robustness in flyback snubberless topologies.
R_θJA	60 °C/W - Junction-to-ambient thermal resistance on FR-4 PCB with 1-in² copper pad; sets maximum power dissipation at ambient < 50 °C.
V_GS(th)	2–4 V - Gate threshold range enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

Pinout & Package

IRFR3103TRR is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and enhances thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≤ ±20 V absolute max rating.
D	Drain current path	High-side connection point for load-switching; electrically tied to exposed metal tab for thermal and current conduction.
S	Source reference node	Common return path for gate drive and load current; establishes local ground reference for gate driver loop.

Key Features

Feature	Design Value
100% Avalanche Tested	Every unit validated for 100 mJ E_AS at T_J = 25 °C - eliminates need for external snubbers in inductive load switching.
Low Q_g/R_DS(on) Ratio	12 nC / 2.8 Ω = 4.3 - balances switching speed and conduction loss for 100–300 kHz flyback converters.
Lead-Free & RoHS Compliant	Meets EU Directive 2011/65/EU - supports environmentally compliant manufacturing and export to regulated markets.
Enhanced SOA Curve	Rated for 1.7 A at 400 V for 10 μs pulses - enables reliable operation in overvoltage fault conditions without secondary protection.

Applications

Industrial AC-DC Power Supplies

LED Driver Flyback Stages

Use Scenario: 230 VAC-input, 12 V/1 A isolated output power supply for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side switching element in discontinuous conduction mode (DCM) flyback converter.

Use Value: 400 V V_DSS provides 20% margin over 385 V rectified peak; 2.8 Ω R_DS(on) limits conduction loss to < 8 mW at full load.

Use Scenario: Constant-current LED driver for street lighting with universal AC input.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer to secondary-side LED string.

Use Value: 100 mJ E_AS rating ensures reliability during lamp open-circuit transients without added clamping diodes.

DC-DC Converters for Telecom

Motor Control in Small Appliances

Use Scenario: 48 V input to 5 V/3 A isolated DC-DC module for base station remote radio units.

IC Role / Device Role / Timing Role: Primary switch in forward converter topology operating at 250 kHz.

Use Value: 12 nC Q_g enables efficient gate driving with low-power 5 V CMOS drivers, reducing auxiliary supply burden.

Use Scenario: Universal motor controller in vacuum cleaners with brushless DC fan stage.

IC Role / Device Role / Timing Role: Low-frequency (≤20 kHz) high-voltage switch for PWM-controlled boost pre-regulator.

Use Value: 60 °C/W R_θJA allows 1.7 A continuous operation on standard 2-layer PCB without heatsink, lowering BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK40ZFP	400 V V_DSS, 2.4 Ω R_DS(on), 14 nC Q_g, TO-220FP package	Through-hole mounting; higher R_θJA (80 °C/W); no DPAK footprint compatibility	Preferred where manual assembly or legacy board layout prohibits SMT adoption.
FQP4N40	400 V V_DSS, 3.5 Ω R_DS(on), 16 nC Q_g, TO-220 package	Larger thermal resistance (62 °C/W on minimal copper); lower avalanche rating (E_AS = 50 mJ)	Acceptable for non-avalanche-critical 50–100 kHz applications with conservative SOA derating.

Compared with STP3NK40ZFP and FQP4N40, IRFR3103TRR offers superior SMT manufacturability, lower gate charge for faster switching, and verified 100 mJ avalanche capability-making it optimal for compact, high-reliability flyback and DC-DC converters requiring DPAK footprint.

Availability

IRFR3103TRR is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver flyback stages, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR3103TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers rugged, high-voltage MOSFETs optimized for industrial switching, UPS systems, and lighting ballasts where avalanche robustness and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFR3103TRR at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 1.1 A per the SOA curve and thermal limitations. This value is derived from the device's 1.7 A rating at 25 °C and its specified thermal resistance and power dissipation envelope, ensuring safe operation without exceeding junction temperature limits.

Does IRFR3103TRR support gate drive from a 3.3 V microcontroller?

Yes - with V_GS(th) ranging from 2 V to 4 V, IRFR3103TRR achieves partial enhancement at 3.3 V, delivering ~0.5 A I_D at V_GS = 3.3 V. For full 1.7 A conduction, 10 V gate drive is required; a simple level shifter or dedicated gate driver is recommended in 3.3 V control systems.

Is the DPAK package of IRFR3103TRR compatible with standard reflow profiles?

Yes - the IRFR3103TRR DPAK package is qualified for standard lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C for 30 seconds. The exposed drain pad requires appropriate stencil design and solder paste volume to ensure void-free thermal interface and mechanical reliability.

How does IRFR3103TRR perform in repetitive avalanche conditions?

IRFR3103TRR is 100% tested for single-pulse E_AS = 100 mJ at T_J = 25 °C. Repetitive avalanche performance depends on pulse frequency, duty cycle, and thermal management; sustained repetitive stress requires SOA validation per JEDEC JESD24-11 and is limited by junction temperature rise between pulses.

IRFR3103TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3103TRR FAQ

1.How can I place an order for IRFR3103TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3103TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3103TRR reliable?

The price and inventory of IRFR3103TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3103TRR is usually 5 days.

3.What payment methods are accepted for IRFR3103TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3103TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3103TRR?

IRFR3103TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3103TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3103TRR?

For technical support, including IRFR3103TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3103TRR requirements.

6.How does Aetrix verify that IRFR3103TRR is sourced from the original manufacturer or authorized distributors?

All IRFR3103TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3103TRR meets industry standards.

7.What is the process for return or replacement of IRFR3103TRR?

All IRFR3103TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3103TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3103TRR part is unused and in its original packaging.

Return procedure for IRFR3103TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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