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Infineon Technologies IRFR3303CPBF
- Part No.:
- IRFR3303CPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3303CPBF.pdf
- Description:
- MOSFET N-CH 30V 33A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,580
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Product details
Overview
IRFR3303CPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 33A N-channel enhancement-mode power MOSFET in TO-252AA (D-Pak) surface-mount package, featuring 0.031Ω RDS(on) at VGS = 10V, fully avalanche-rated operation, and fast switching with 29nC total gate charge. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFR3303CPBF datasheet, IRFR3303CPBF pinout, IRFR3303CPBF application, or IRFR3303CPBF equivalent, key selection criteria include its 30V VDS, 0.031Ω on-resistance at 18A, 95mJ single-pulse avalanche energy, 50°C/W junction-to-ambient thermal resistance on PCB mount, and D-Pak lead configuration optimized for automated SMT assembly and thermal management.
Technical Context
This HEXFET® device uses fifth-generation silicon processing to minimize conduction losses while maintaining rugged unclamped inductive switching capability. Its low gate charge (29nC) and fast turn-on/turn-off times (11ns/16ns delay, 99ns rise, 28ns fall) support high-frequency PWM operation up to several hundred kHz in buck converters and BLDC motor controllers.
The integrated body diode exhibits 1.3V forward voltage at 18A and 53–80ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Thermal design leverages the D-Pak's 2.2°C/W junction-to-case resistance and defined PCB copper area for reliable 57W power dissipation at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage; defines safe operating range in 24V automotive and industrial bus applications. |
| RDS(on) | 0.031Ω @ VGS = 10V, ID = 18A - Enables <1W conduction loss at 18A, critical for thermally constrained SMT designs. |
| ID (continuous) | 33A @ TC = 25°C - Confirmed continuous current rating under ideal heatsinking; derates to 21A at 100°C case temperature. |
| EAS | 95mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients without external snubbers. |
| Qg | 29nC - Total gate charge determines driver strength requirement; enables efficient gate driving with standard 1A peak drivers. |
| RθJA | 50°C/W (PCB mount) - Thermal resistance value used to calculate junction temperature rise over ambient for layout validation. |
| tr/tf | 99ns/28ns - Rise/fall times directly impact switching loss and EMI profile in high-frequency power stages. |
Pinout & Package
IRFR3303CPBF is housed in a TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. The package supports vapor-phase, infrared, and wave soldering per AN-994 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10V logic-level gate drive; threshold voltage 2.0–4.0V allows compatibility with 3.3V/5V microcontrollers via level-shifting or gate drivers. |
| 2 (Drain) | High-side power path | Internally connected to exposed metal tab; must be routed to high-current node and thermally coupled to PCB copper pour. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; requires low-inductance connection to ground plane. |
| 4 (Drain) | Redundant power path | Second drain connection for enhanced current handling and thermal spreading; electrically identical to Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.031Ω minimizes I²R conduction loss in high-current 24V systems, improving efficiency by >1.5% vs. comparable 40V MOSFETs. |
| Fully avalanche-rated | 95mJ EAS and 18A IAR enable reliable operation in unclamped inductive loads without derating or external protection. |
| Fast switching performance | 29nC Qg, 99ns tr, and 28ns tf reduce switching losses in 200–500kHz DC-DC converters and brushless motor drives. |
| Surface-mount D-Pak | TO-252AA footprint supports automated placement and reflow; exposed drain pad delivers 2.2°C/W RθJC for direct PCB thermal transfer. |
| Body diode optimization | 1.3V VSD and 53ns trr allow efficient freewheeling in synchronous rectification and H-bridge configurations. |
Applications
| DC-DC Buck Converter | Automotive Body Control Module |
|---|---|
Use Scenario: High-efficiency 24V-to-5V/3.3V point-of-load conversion in infotainment head units. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and thermal stress. Use Value: Achieves >94% efficiency at 15A output with 0.031Ω RDS(on), lowering board temperature by 12°C versus diode solution. | Use Scenario: Power distribution and load switching for interior lighting, window lifts, and HVAC actuators. IC Role / Device Role: High-current N-channel load switch controlled by MCU GPIO with integrated protection. Use Value: Withstands 120A pulsed drain current and 95mJ avalanche energy during load dump events per ISO 7637-2. |
| BLDC Motor Driver Half-Bridge | Industrial PLC Output Stage |
Use Scenario: 24V/48V three-phase inverter for small fans and pumps in HVAC and factory automation. IC Role / Device Role: Upper- or lower-leg switching element in 60kHz PWM-driven half-bridge topology. Use Value: Fast 99ns rise time and 29nC Qg enable clean edge transitions and minimal shoot-through risk with matched gate drivers. | Use Scenario: Solid-state relay replacement for 24V DC digital output modules driving solenoids and valves. IC Role / Device Role: Robust, low-RDS(on) power switch with built-in avalanche immunity for inductive load switching. Use Value: Eliminates need for external flyback diodes due to 5.7mJ repetitive avalanche rating and 1.3V body diode forward drop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF20 | 200V VDS, 0.036Ω RDS(on), TO-220 package | Higher voltage rating but larger through-hole footprint and higher RDS(on); unsuitable for space-constrained SMT designs. | Select when 200V blocking is required and PCB real estate permits through-hole mounting. |
| DMN3025LSD-13 | 30V VDS, 0.025Ω RDS(on), SO-8 package, logic-level gate | Lower on-resistance and smaller footprint, but 12A continuous rating limits use to sub-15A applications. | Prefer for compact, low-current logic-level driven circuits where thermal budget allows SO-8 limitations. |
Compared with STP30NF20 and DMN3025LSD-13, IRFR3303CPBF uniquely balances 33A current capacity, D-Pak thermal performance, and 30V rating for mid-power SMT applications-offering superior thermal resistance and avalanche ruggedness over SO-8 alternatives while avoiding TO-220 assembly complexity.
Availability
IRFR3303CPBF is available at Aetrix Electronics and suitable for DC-DC converters, automotive body control modules, BLDC motor drivers, and industrial PLC output stages requiring stable component supply and long-term production continuity.
Supply support for IRFR3303CPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.
The HEXFET® product line was originally developed by International Rectifier and continues under Infineon to deliver high-reliability, high-efficiency discrete power MOSFETs for industrial, automotive, and computing power conversion applications.
FAQ
Is IRFR3303CPBF suitable for logic-level gate drive?
No, IRFR3303CPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0V to 4.0V, but it requires 10V VGS to achieve rated 0.031Ω RDS(on). Driving it with 3.3V or 5V alone results in significantly higher on-resistance and thermal stress; a gate driver or level shifter is required for full performance.
What is the maximum PCB copper area needed for thermal compliance at 33A?
Per datasheet AN-994, a minimum 1" square (25.4mm × 25.4mm) FR-4 PCB copper area with 2oz copper thickness is required to achieve the specified 50°C/W RθJA. For sustained 33A operation, additional thermal vias under the drain pad and internal copper planes are strongly recommended to maintain TJ ≤ 150°C.
Does IRFR3303CPBF have built-in ESD protection?
No, IRFR3303CPBF does not integrate ESD protection circuitry. Its gate oxide is sensitive to electrostatic discharge; handling requires standard Class 1A ESD precautions (≤250V), including grounded workstations, ionizers, and conductive packaging during assembly and test.
Can IRFR3303CPBF replace IRFR3703 in an existing design?
No-IRFR3703 has 30V VDS but 0.009Ω RDS(on) and 120A pulsed current, with different gate charge (90nC) and thermal characteristics. Substituting IRFR3303CPBF would increase conduction loss by ~3.5× and reduce avalanche margin; layout, gate drive, and thermal design must be revalidated.
IRFR3303CPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3303CPBF FAQ
1.How can I place an order for IRFR3303CPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3303CPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3303CPBF reliable?
The price and inventory of IRFR3303CPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303CPBF is usually 5 days.
3.What payment methods are accepted for IRFR3303CPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303CPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3303CPBF?
IRFR3303CPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3303CPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3303CPBF?
For technical support, including IRFR3303CPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303CPBF requirements.
6.How does Aetrix verify that IRFR3303CPBF is sourced from the original manufacturer or authorized distributors?
All IRFR3303CPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303CPBF meets industry standards.
7.What is the process for return or replacement of IRFR3303CPBF?
All IRFR3303CPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303CPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3303CPBF part is unused and in its original packaging.
Return procedure for IRFR3303CPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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