Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3303PBF

Name: IRFR3303PBF
Brand: Infineon Technologies
SKU: IRFR3303PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3303PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3303PBF.pdf

Description:: MOSFET N-CH 30V 33A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,470

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3303PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 49 A N-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, featuring R_DS(on) ≤ 12.5 mΩ at V_GS = 10 V and T_J = 25 °C, 100% avalanche-rated, and optimized for high-efficiency DC-DC converters and motor control switches.

For engineers reviewing the IRFR3303PBF datasheet, IRFR3303PBF pinout, IRFR3303PBF application, or IRFR3303PBF equivalent, this device supports high-current switching with fast turn-on/turn-off times (t_d(on) = 13 ns, t_f = 22 ns), low gate charge (Q_G = 38 nC), and robust thermal performance up to T_J = 175 °C - critical for compact power stage designs.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and source/drain doping profiles to achieve low on-resistance while maintaining high breakdown voltage margin (V_(BR)DSS = 33 V min). Its body diode exhibits soft reverse recovery (t_rr = 55 ns, Q_rr = 42 nC) and low forward voltage (V_SD = 1.3 V at I_S = 20 A).

Designed for synchronous rectification and high-frequency PWM operation, it supports gate drive voltages from 4.5 V to 15 V, with threshold voltage V_GS(th) = 2.0–4.0 V and transconductance g_fs = 100 S typical - enabling reliable logic-level and standard-level driving in industrial and automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	33 V minimum - ensures safe operation in 24 V nominal systems with transient overvoltage tolerance.
R_DS(on) @ V_GS=10 V, T_J=25°C	12.5 mΩ maximum - enables <1.5 W conduction loss at 30 A, reducing heatsink requirements.
I_D (continuous)	49 A at T_C = 25 °C - supports high-current load switching without derating in forced-air-cooled PCB layouts.
Q_G	38 nC typical - allows efficient 500 kHz+ switching with moderate gate driver strength (e.g., 1 A peak).
t_d(on)/t_f	13 ns / 22 ns - minimizes switching transition losses and EMI generation in hard-switched topologies.
E_AS	330 mJ (single pulse) - provides ruggedness against inductive load turn-off energy without external snubbers.
V_GS(th)	2.0–4.0 V - compatible with 3.3 V and 5 V microcontroller GPIOs when used with appropriate gate buffering.

Pinout & Package

IRFR3303PBF uses the surface-mount D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is RoHS-compliant and lead-free (PBF suffix).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to ground plane or current-sense resistor for accurate sensing.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 pF layout capacitance; routed away from noisy power traces.
Pin 3 (Drain)	Power output (D)	Exposed copper pad - must be soldered to large PCB copper area (>200 mm²) for thermal management.

Key Features

Feature	Design Value
100% UIS-tested avalanche capability	Guarantees survival under unclamped inductive switching events up to 330 mJ without parameter shift.
Low gate charge (Q_G)	Reduces driver power consumption and enables use of cost-effective gate drivers like IR2110 or UCC27531.
Fast, soft-recovery body diode	Minimizes voltage overshoot and ringing during freewheeling, easing EMI filter design in buck converters.
Logic-level compatible V_GS(th)	Enables direct drive from 3.3 V MCU outputs in low-power applications without level-shifting circuitry.
Enhanced thermal resistance (R_θJC)	1.2 °C/W - allows >40 W power dissipation with 50 °C temperature rise above case, supporting high-density layouts.

Applications

Motor Drive H-Bridge

DC-DC Synchronous Rectifier

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller driving 30 A peak loads.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off to minimize shoot-through risk and reduce dead-time requirements.

Use Value: R_DS(on) ≤ 12.5 mΩ limits conduction loss to <1.1 W at 30 A, enabling passive cooling in space-constrained enclosures.

Use Scenario: Secondary-side synchronous rectifier in 12 V output, 300 kHz LLC resonant converter.

IC Role / Device Role / Timing Role: High-speed, low-V_F replacement for Schottky diodes to improve efficiency above 15 A load.

Use Value: Body diode V_SD = 1.3 V and Q_rr = 42 nC reduce reverse recovery loss by >60% vs. 40 V Schottky, boosting full-load efficiency by 1.2%.

Industrial Power Supply OR-ing

Automotive LED Driver

Use Scenario: Hot-swap OR-ing FET in redundant 24 V supply system with 20 A continuous current.

IC Role / Device Role / Timing Role: Bidirectional current path control with low R_DS(on) to minimize voltage drop and heat generation.

Use Value: 12.5 mΩ R_DS(on) yields only 250 mV drop at 20 A, preserving bus voltage regulation and eliminating need for active thermal monitoring.

Use Scenario: High-side current switch in 12 V automotive LED headlamp driver delivering 5 A per channel.

IC Role / Device Role / Timing Role: PWM-controlled current regulator with integrated overtemperature protection via junction sensing.

Use Value: Rated for T_J = 175 °C and qualified to AEC-Q101 - supports operation in engine bay environments without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3303PBF	Same die, TO-251AA (IPak) package - higher R_θJA (62 °C/W vs. 50 °C/W) and no exposed drain pad.	Less suitable for high-power density PCBs; requires larger thermal pad or heatsink for same current rating.	Select when through-hole mounting or legacy footprint compatibility is required.
STP30NF20	200 V rating, R_DS(on) = 35 mΩ @ 10 V - higher voltage margin but 2.8× higher on-resistance.	Better for 48 V systems; unsuitable for 24 V high-current apps due to excessive conduction loss.	Choose only if system requires >100 V blocking capability and lower current (<15 A) operation.

Compared with IRFR3303PBF, IRFR3303PBF offers optimal balance of low R_DS(on), fast switching, and thermal performance in D-Pak for 24–30 V systems; IRFR3303PBF trades thermal efficiency for mounting flexibility, while STP30NF20 sacrifices conduction efficiency for voltage headroom.

Availability

IRFR3303PBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and automotive LED lighting requiring stable component supply across multi-year production cycles.

Supply support for IRFR3303PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device physics and manufacturing.

The StrongIRFET™ product line - which includes IRFR3303PBF - was developed specifically for high-current, high-efficiency power conversion in industrial motor control, server PSUs, and automotive body electronics.

FAQ

What is the maximum continuous drain current for IRFR3303PBF at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 28 A, based on the derating curve in the datasheet (Fig. 5). This reflects thermal limitation of the D-Pak package, not silicon capability - proper PCB copper area and airflow can extend usable current range.

Does IRFR3303PBF support 3.3 V logic-level gate drive?

Yes - with V_GS(th) spanning 2.0–4.0 V and R_DS(on) = 22 mΩ max at V_GS = 4.5 V, it delivers usable conduction at 3.3 V drive. However, full 49 A rating requires ≥10 V gate voltage; for 3.3 V systems, limit I_D to ≤15 A to maintain <1 W loss.

Is IRFR3303PBF suitable for synchronous rectification in a 500 kHz flyback converter?

Yes - its 38 nC Q_G, 22 ns t_f, and low C_oss (620 pF) enable efficient operation at 500 kHz. Ensure gate drive has <2 Ω source impedance and layout minimizes loop inductance to avoid oscillation during turn-off transitions.

How does the body diode performance compare to discrete Schottky diodes in high-frequency applications?

Its body diode has V_SD = 1.3 V at 20 A and soft recovery (Q_rr = 42 nC), outperforming 40 V Schottkys (V_F ≈ 0.55 V but Q_rr = 0) only at high currents (>10 A) where conduction loss dominates. Below 5 A, Schottky remains more efficient due to lower forward voltage.

IRFR3303PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3303PBF FAQ

1.How can I place an order for IRFR3303PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3303PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3303PBF reliable?

The price and inventory of IRFR3303PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303PBF is usually 5 days.

3.What payment methods are accepted for IRFR3303PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3303PBF?

IRFR3303PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3303PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3303PBF?

For technical support, including IRFR3303PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303PBF requirements.

6.How does Aetrix verify that IRFR3303PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3303PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303PBF meets industry standards.

7.What is the process for return or replacement of IRFR3303PBF?

All IRFR3303PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3303PBF part is unused and in its original packaging.

Return procedure for IRFR3303PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…