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Infineon Technologies IRFR3303TR
- Part No.:
- IRFR3303TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3303TR.pdf
- Description:
- MOSFET N-CH 30V 33A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,982
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Product details
Overview
IRFR3303TR from Infineon Technologies (formerly International Rectifier) is a 30V, 33A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) surface-mount package, featuring 0.031Ω RDS(on) at VGS = 10V, fully avalanche-rated operation, and fast switching with 29nC total gate charge. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFR3303TR datasheet, IRFR3303TR pinout, IRFR3303TR application, or IRFR3303TR equivalent, key selection criteria include its 2.2°C/W junction-to-case thermal resistance, 18A repetitive avalanche current rating, 1.3V body diode forward voltage at 18A, and compatibility with 10V gate drive in industrial power supplies and battery-powered tools.
Technical Context
This fifth-generation HEXFET device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its 5.7mJ repetitive avalanche energy and 95mJ single-pulse rating support reliable operation under transient overloads without external snubbers.
The D-Pak package enables PCB-mounted thermal management with 50°C/W junction-to-ambient resistance on 1"² FR-4 board, and its gate threshold voltage range (2.0–4.0V) ensures compatibility with both 3.3V and 5V logic-level controllers when used with appropriate gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V maximum drain-source breakdown voltage - defines safe operating voltage ceiling in 24V systems |
| RDS(on) | 0.031Ω max at VGS = 10V, ID = 18A - enables ≤0.5W conduction loss at 40A peak in high-current buck stages |
| ID @ TC = 25°C | 33A continuous drain current - supports sustained 25A loads with proper heatsinking |
| Qg | 29nC total gate charge - determines required gate driver peak current for <100ns switching transitions |
| EAS | 95mJ single-pulse avalanche energy - allows safe operation during inductive turn-off transients up to 18A |
| RθJC | 2.2°C/W junction-to-case thermal resistance - enables direct thermal pad coupling to copper pour or heatsink |
| VSD | 1.3V body diode forward voltage at IS = 18A - impacts reverse recovery losses in synchronous rectification |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 – Gate | Control electrode | Receives gate drive signal; requires ≥10V for full enhancement; 20V absolute max rating |
| 2 – Drain | Main current output terminal | Internally connected to exposed metal pad; must be soldered to large copper area for thermal/EMI performance |
| 3 – Source | Main current return path | Reference node for gate drive; connects to power ground plane in high-side or low-side configurations |
| 4 – Drain | Secondary drain connection | Redundant drain terminal sharing same internal node as Pin 2; improves current sharing and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.031Ω enables >96% efficiency in 12V/20A buck converters at 500kHz |
| Fully avalanche-rated | 95mJ single-pulse and 5.7mJ repetitive avalanche energy eliminate need for external clamping in motor drive flyback paths |
| Fast switching | 11ns turn-on delay + 99ns rise time supports >1MHz PWM operation with minimal switching loss |
| Surface-mount D-Pak | TO-252AA footprint allows automated assembly and direct thermal coupling to PCB copper without through-hole vias |
| Body diode optimization | 53–80ns reverse recovery time and 94–140nC Qrr reduce shoot-through risk in synchronous rectifiers |
Applications
| DC-DC Synchronous Rectifier | Brushless DC Motor Phase Switch |
|---|---|
|
Use Scenario: Secondary-side switching in isolated 48V-to-12V telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in LLC resonant converter output stage. Use Value: Reduces conduction loss by 65% versus 40V/40A Schottky, enabling 2.3W lower dissipation at 20A load. |
Use Scenario: High-current phase leg in 24V cordless power tool motor drivers. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter driving 300W BLDC motor. Use Value: 0.031Ω RDS(on) limits I²R loss to 1.8W at 24A RMS, supporting continuous 30A peak without derating. |
| Hot-Swap ORing Controller | Industrial PLC Output Driver |
|
Use Scenario: Redundant 24V power rail ORing in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for bidirectional current blocking and inrush limiting. Use Value: 30V VDS rating accommodates 28V input transients; 18A avalanche current handles hot-insertion surge. |
Use Scenario: Solid-state replacement for electromechanical relays controlling solenoid valves in factory automation. IC Role / Device Role / Timing Role: High-side load switch with integrated gate driver interface and fault reporting. Use Value: 33A continuous rating supports 25A inductive loads; 150°C max junction temperature ensures reliability in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF3LL | RDS(on) = 0.028Ω (lower), but only 30A ID rating and no specified avalanche energy | Lacks documented EAS rating - unsuitable for unclamped inductive switching in motor drives | Prefer for pure low-loss DC-DC rectification where avalanche stress is absent |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 0.032Ω (slightly higher), 30V rating, 33A ID, but SO-8FL package with 3.5°C/W RθJC | Higher thermal resistance limits power density - requires larger PCB copper area for same dissipation | Choose when space-constrained layouts favor smaller footprint over thermal performance |
Compared with STP30NF3LL and NTMFS4C09NT1G, IRFR3303TR delivers superior thermal performance via its 2.2°C/W RθJC and verified 95mJ avalanche robustness - critical for motor control and hot-swap designs where transient energy absorption and thermal headroom are non-negotiable.
Availability
IRFR3303TR is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and battery-powered power tools requiring stable component supply across multi-year production cycles.
Supply support for IRFR3303TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.
The IRFR/U3303 series belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency switching in industrial power conversion, motor control, and battery management systems where low RDS(on), fast switching, and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFR3303TR supports 21A continuous drain current at TC = 100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be validated against actual PCB layout and ambient conditions using the 2.2°C/W RθJC value.
Is IRFR3303TR suitable for logic-level gate drive?
No - IRFR3303TR has a gate threshold voltage range of 2.0–4.0V and is optimized for 10V gate drive. While it conducts at 4.5V, RDS(on) rises significantly above 0.1Ω, increasing conduction loss. For true logic-level operation, select IRFR3708 or similar 3.3V-compatible variants.
How is the drain terminal configured in the TO-252AA package?
The TO-252AA package features two drain terminals: Pin 2 and Pin 4 are electrically connected to the same internal drain node and to the exposed metal pad on the bottom surface. Both pins and the pad must be soldered to a common copper pour to ensure optimal thermal conduction and current handling.
What is the recommended gate resistor for hard-switching applications?
A 13Ω gate resistor is used in the datasheet's switching time test circuit (Fig. 10a) to achieve measured values of td(on) = 11ns, tr = 99ns, td(off) = 16ns, and tf = 28ns. Lower values (e.g., 5–10Ω) improve switching speed but increase gate driver stress and EMI; higher values damp ringing at the cost of increased switching loss.
IRFR3303TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3303TR FAQ
1.How can I place an order for IRFR3303TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3303TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3303TR reliable?
The price and inventory of IRFR3303TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303TR is usually 5 days.
3.What payment methods are accepted for IRFR3303TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3303TR?
IRFR3303TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3303TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3303TR?
For technical support, including IRFR3303TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303TR requirements.
6.How does Aetrix verify that IRFR3303TR is sourced from the original manufacturer or authorized distributors?
All IRFR3303TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303TR meets industry standards.
7.What is the process for return or replacement of IRFR3303TR?
All IRFR3303TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3303TR part is unused and in its original packaging.
Return procedure for IRFR3303TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR3303TR Tags
-
BSZ180P03NS3EGATMA1
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